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    MMBT2369 Search Results

    MMBT2369 Datasheets (47)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MMBT2369
    Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR SWITCH NPN SOT23 Original PDF 5
    MMBT2369
    Fairchild Semiconductor NPN High Speed Switsh Original PDF 46.41KB 4
    MMBT2369
    Fairchild Semiconductor NPN Switching Transistor Original PDF 201.67KB 6
    MMBT2369
    Galaxy Semi-Conductor Holdings NPN General Purpose Amplifier Original PDF 135.63KB 2
    MMBT2369
    Sinyork Mini size of Discrete semiconductor elements Original PDF 506.13KB 15
    MMBT2369
    Motorola European Master Selection Guide 1986 Scan PDF 40.83KB 1
    MMBT2369
    Motorola NPN silicon switching transistor. Scan PDF 193.26KB 5
    MMBT2369
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 119.71KB 1
    MMBT2369
    National Semiconductor NPN SWitching Transistors Scan PDF 46.69KB 1
    MMBT2369
    National Semiconductor Surface Mount Transistors Scan PDF 67.68KB 2
    MMBT2369
    National Semiconductor Sulface Mount Transistors Scan PDF 30.18KB 1
    MMBT2369A
    Fairchild Semiconductor NPN Switching Transistor Original PDF 189.82KB 6
    MMBT2369A
    Fairchild Semiconductor NPN Switching Transistor Original PDF 519.91KB 14
    MMBT2369A
    Galaxy Semi-Conductor Holdings NPN General Purpose Amplifier Original PDF 138.65KB 3
    MMBT2369A
    PanJit Semiconductors NPN GENERAL PURPOSE SWITCHING TRANSISTOR Original PDF 167.95KB 4
    MMBT2369A
    Fairchild Semiconductor NPN Switching Transistor Scan PDF 198.96KB 6
    MMBT2369A
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 31.9KB 1
    MMBT2369A
    National Semiconductor NPN SWitching Transistors Scan PDF 46.69KB 1
    MMBT2369A
    National Semiconductor High Speed Saturated Switching Transistors Scan PDF 68.65KB 1
    MMBT2369A
    National Semiconductor Surface Mount Transistors Scan PDF 67.68KB 2
    SF Impression Pixel

    MMBT2369 Price and Stock

    onsemi

    onsemi MMBT2369ALT1G

    TRANS NPN 15V 0.2A SOT23-3
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    DigiKey () MMBT2369ALT1G Digi-Reel 16,612 1
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    MMBT2369ALT1G Reel 15,000 3,000
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    MMBT2369ALT1G Ammo Pack 10 Weeks, 4 Days 1
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    Onlinecomponents.com MMBT2369ALT1G 15,000
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    New Advantage Corporation MMBT2369ALT1G 840,000 1
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    Win Source Electronics MMBT2369ALT1G 34,700
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    onsemi SMMBT2369ALT1G

    TRANS NPN 15V 0.2A SOT23-3
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    DigiKey () SMMBT2369ALT1G Digi-Reel 10,760 1
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    SMMBT2369ALT1G Cut Tape 10,760 1
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    SMMBT2369ALT1G Reel 9,000 3,000
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    Mouser Electronics SMMBT2369ALT1G 6,241
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    Chip 1 Exchange SMMBT2369ALT1G 2,906
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    onsemi MMBT2369

    TRANS NPN 15V 0.2A SOT-23-3
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    DigiKey () MMBT2369 Digi-Reel 1
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    onsemi MMBT2369A

    TRANS NPN 15V 0.2A SOT-23-3
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    DigiKey MMBT2369A Digi-Reel 1
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    onsemi MMBT2369ALT1

    TRANS NPN 15V 0.2A SOT23
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    MMBT2369 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sot 23 marking code 1ja

    Contextual Info: MMBT2369LT1G, MMBT2369LT1G, MMBT2369ALT1G, MMBT2369ALT1G Switching Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 CASE 318 STYLE 6


    Original
    MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G AEC-Q101 OT-23 MMBT2369LT1/D sot 23 marking code 1ja PDF

    Tf 227

    Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
    Contextual Info: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector


    OCR Scan
    PN2369A MMBT2369A MMPQ2369 OT-23 SOIC-16 bS01130 0040bc Tf 227 MMBT2369A MMPQ2369 PN2369A SOIC-16 PDF

    PN2369A

    Contextual Info: S i M 1 C O N B U C T O P3 PN2369A MMBT2369A B / MMPQ2369 SOT-23 MMPQ2369 SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d fo r high s p e e d s a tu ra tio n sw itc h in g a t c o llec to r c u rre n ts of 1 0 m A to 1 0 0 m A . S o u rc e d from P ro c e s s 2 1 .


    OCR Scan
    PN2369A MMBT2369A PN2369A MMPQ2369 OT-23 SOIC-16 PDF

    PN2369

    Abstract: PN2369 EQUIVALENT HIGH SPEED SWITCHING NPN SOT23 FAIRCHILD SOT-23 MARK 30 MMBT2369
    Contextual Info: MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark: 1J Absolute Maximum Ratings * T a Symbol


    Original
    MMBT2369 PN2369 100mA. MMBT2369 OT-23 PN2369 PN2369 EQUIVALENT HIGH SPEED SWITCHING NPN SOT23 FAIRCHILD SOT-23 MARK 30 PDF

    TG 2309

    Abstract: MMBT2369LT1
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MMBT2369LT1 MMBT2369ALT1* COLLECTOR NPN Silicon 'M o to ro la Preferred D evice BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value C ollector-E m itter Voltage v CEO 15 Vdc C ollector-E m itter Voltage


    OCR Scan
    MMBT2369LT1 MMBT2369ALT1* OT-23 O-236AB) MMBT2369ALT1 TG 2309 PDF

    MMBT2369LT1

    Abstract: MMBT2369ALT1 2N3227 1N916 2N2369 MMBT2369 MMBT2369A 2N2369 SOT-23
    Contextual Info: MOTOROLA Order this document by MMBT2369LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors MMBT2369LT1 MMBT2369ALT1* COLLECTOR 3 NPN Silicon 1 BASE *Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


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    MMBT2369LT1/D MMBT2369LT1 MMBT2369ALT1* MMBT2369LT1/D* MMBT2369LT1 MMBT2369ALT1 2N3227 1N916 2N2369 MMBT2369 MMBT2369A 2N2369 SOT-23 PDF

    marking code m1j transistor

    Abstract: MMBT2369 marking 04 sot-23 marking M1j D marking amplifier marking code PC sot-23
    Contextual Info: BL Galaxy Electrical Production specification NPN General Purpose Amplifier MMBT2369 FEATURES Pb z Epitaxial planar die construction. z Ultra-small surface mount package. Lead-free APPLICATIONS z Use as a medium power amplifier. SOT-23 ORDERING INFORMATION


    Original
    MMBT2369 OT-23 -55to BL/SSSTC114 marking code m1j transistor MMBT2369 marking 04 sot-23 marking M1j D marking amplifier marking code PC sot-23 PDF

    Contextual Info: MMBT2369 / MMBT2369A MMBT2369 / MMBT2369A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-06-02 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse


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    MMBT2369 MMBT2369A OT-23 O-236) UL94V-0 MMBT2369 PDF

    2N2369 SOT-23

    Abstract: MMBT2369LT1 2N3227 1N916 2N2369 MMBT2369 MMBT2369A MMBT2369ALT1
    Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Transistors NPN Silicon 3 COLLECTOR MMBT2369LT1 MMBT2369ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector–Emitter Voltage V CEO 15 Vdc Collector–Emitter Voltage V CES 40 Vdc CASE 318–08, STYLE 6


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    MMBT2369LT1 MMBT2369ALT1 236AB) 2N2369 SOT-23 MMBT2369LT1 2N3227 1N916 2N2369 MMBT2369 MMBT2369A MMBT2369ALT1 PDF

    Contextual Info: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.120 3.04 • Collector-emitter voltage V CE = 15V 0.110(2.80) • Collector current I C = 200mA • Lead free in comply with EU RoHS 2011/65/EU directives.


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    MMBT2369A 200mA 2011/65/EU IEC61249 OT-23, MIL-STD-750, PDF

    2N2369 SOT-23

    Abstract: marking code m1j transistor MMBT2369LT1 2N2369 2N3227 MMBT2369 MMBT2369A MMBT2369ALT1 MMBT2369ALT1G MMBT2369LT1G
    Contextual Info: MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 is a Preferred Device Switching Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Emitter Voltage


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    MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 OT-23 MMBT2369LT1/D 2N2369 SOT-23 marking code m1j transistor MMBT2369LT1 2N2369 2N3227 MMBT2369 MMBT2369A MMBT2369ALT1G MMBT2369LT1G PDF

    MMBT2369

    Abstract: HIGH SPEED SWITCHING NPN SOT23
    Contextual Info: MMBT2369 MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. G S D SOT-23 Mark: 1J Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol


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    MMBT2369 100mA. OT-23 MMBT2369 HIGH SPEED SWITCHING NPN SOT23 PDF

    MMBT2369ALT1G

    Abstract: MMBT2369LT1G 1N916 MMBT2369 MMBT2369A
    Contextual Info: MMBT2369LT1G, MMBT2369ALT1G Switching Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15


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    MMBT2369LT1G, MMBT2369ALT1G MMBT2369LT1/D MMBT2369ALT1G MMBT2369LT1G 1N916 MMBT2369 MMBT2369A PDF

    MMBT2369

    Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
    Contextual Info: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol


    Original
    MMBT2369 MMBT2369 100mA. OT-23 MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23 PDF

    Contextual Info: MMBT2369L, MMBT2369AL Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    MMBT2369L, MMBT2369AL MMBT2369LT1/D PDF

    MMBT2369

    Contextual Info: MMBT2369LT1G, MMBT2369LT1G, MMBT2369ALT1G, MMBT2369ALT1G Switching Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 CASE 318 STYLE 6


    Original
    MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G MMBT2369LT1/D MMBT2369 PDF

    PN2369A

    Abstract: IC NE 556 Rise time 1 ns MMBT2369A MMPQ2369 SOIC-16 HIGH SPEED SWITCHING NPN SOT23
    Contextual Info: PN2369A MMBT2369A MMPQ2369 C B E E E B B E B E C TO-92 BE SOT-23 B C SOIC-16 Mark: 1S C C C C C C C NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings*


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    PN2369A MMBT2369A MMPQ2369 OT-23 SOIC-16 PN2369A MMBT2369A IC NE 556 Rise time 1 ns MMPQ2369 SOIC-16 HIGH SPEED SWITCHING NPN SOT23 PDF

    Contextual Info: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives


    Original
    MMBT2369A 200mA 2002/95/EC OT-23, MIL-STD-750, PDF

    PN2369A

    Abstract: MMBT2369A MMPQ2369 transistor GC cd rjr ce transistor
    Contextual Info: s s vis z;-c; molj z t o h PN2369A MMBT2369A MMPQ2369 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Màximum RdtinÇjS T A = 2 5 ° C u n le s s o th e r w is e n o te d


    OCR Scan
    PN2369A MMBT2369A MMPQ2369 MMPQ2369 transistor GC cd rjr ce transistor PDF

    2N2369 SOT-23

    Abstract: MMBT2369ALT1 1N916 2N2369 2N3227 MMBT2369 MMBT2369LT1
    Contextual Info: ON Semiconductort MMBT2369LT1 MMBT2369ALT1* Switching Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage


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    MMBT2369LT1 MMBT2369ALT1* r14525 MMBT2369LT1/D 2N2369 SOT-23 MMBT2369ALT1 1N916 2N2369 2N3227 MMBT2369 MMBT2369LT1 PDF

    MMBT2369A

    Abstract: Transistor General Purpose Transistor FE SOT
    Contextual Info: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives


    Original
    MMBT2369A 200mA 2002/95/EC OT-23, MIL-STD-750, MMBT2369A Transistor General Purpose Transistor FE SOT PDF

    switching transistor 331

    Abstract: CBVK741B019 F63TNR MMBT2369A PN2222N PN2369A 1073 PN222N label
    Contextual Info: PN2369A / MMBT2369A PN2369A MMBT2369A C E C B TO-92 B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol


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    PN2369A MMBT2369A PN2369A OT-23 switching transistor 331 CBVK741B019 F63TNR MMBT2369A PN2222N 1073 PN222N label PDF

    Contextual Info: MOTOROLA Order this document by MMBT2369LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors MMBT2369LT1 MMBT2369ALT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


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    MMBT2369LT1/D MMBT2369LT1 MMBT2369ALT1* MMBT2369LT1/D* PDF

    2N2369 SOT-23

    Abstract: MMBT2369LT1 2N3227 marking code m1j transistor 1N916 2N2369 MMBT2369 MMBT2369A MMBT2369ALT1 M1JX
    Contextual Info: MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 is a Preferred Device Switching Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage


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    MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 r14525 MMBT2369LT1/D 2N2369 SOT-23 MMBT2369LT1 2N3227 marking code m1j transistor 1N916 2N2369 MMBT2369 MMBT2369A M1JX PDF