MMPQ2369 Search Results

Tf 227

Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Contextual Info: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector

PN2369A

Contextual Info: S i M 1 C O N B U C T O P3 PN2369A MMBT2369A B / MMPQ2369 SOT-23 MMPQ2369 SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d fo r high s p e e d s a tu ra tio n sw itc h in g a t c o llec to r c u rre n ts of 1 0 m A to 1 0 0 m A . S o u rc e d from P ro c e s s 2 1 .

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MMPQ2369 NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 15 Vdc Collector – Base Voltage

Contextual Info: ON Semiconductort Quad Switching Transistor MMPQ2369 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCEO 15 Vdc Collector −Base Voltage VCB 40 Vdc Emitter −Base Voltage VEB 4.5 Vdc IC

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MMPQ2369 NPN Silicon E □ Motorola Preferred Device E Q ik c ü E E Q E CASE 751B-05, STYLE 4 SO-16 MAXIMUM RATINGS Rating Collector- Emitter Voltage Symbol Value Unit v CEO 15 Vdc Collector-Base Voltage

PN2369A

Abstract: IC NE 556 Rise time 1 ns MMBT2369A MMPQ2369 SOIC-16 HIGH SPEED SWITCHING NPN SOT23
Contextual Info: PN2369A MMBT2369A MMPQ2369 C B E E E B B E B E C TO-92 BE SOT-23 B C SOIC-16 Mark: 1S C C C C C C C NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings*

MMPQ2369

Contextual Info: ON Semiconductort Quad Switching Transistor MMPQ2369 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 4.5 Vdc IC 500

PN2369A

Abstract: MMBT2369A MMPQ2369 transistor GC cd rjr ce transistor
Contextual Info: s s vis z;-c; molj z t o h PN2369A MMBT2369A MMPQ2369 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Màximum RdtinÇjS T A = 2 5 ° C u n le s s o th e r w is e n o te d

MMPQ2369

Contextual Info: ON Semiconductort Quad Switching Transistor MMPQ2369 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 4.5 Vdc IC 500

transistors BC 543

Abstract: F245B BSR57M5 fmba0656 TJ309 f256c f245a PN5432 PN4857 2n 5459
Contextual Info: NPN Multiple Chip Transistors Device No. [Mark] MMPQ2369A Case Style SO-16 S3 V CBO V VCES* EBO (V) (V) Min (V) Min Min VCEO 15 40 4.5 I CBO ICES* (nA) Max 400 @ VCB (V) Min 20 40 40 30 20 h FE V CE 10 10 30 100 0.35 1 0.4 1 0.2 0.2 & @ Max (mA) (V) 120

diode

Abstract: diode array mmad1103 6700M SO-14 MMAD130 MMAD1105 MMAD1106 MMAD1107 MMAD1108
Contextual Info: SO -14, SO-16 Devices Maximum die size 75 mil x 115 mil C A S E 75 1B-05 Quad Transistors f j@ lc hpE @ lc Device MMPQ2222A MMPQ2369 MMPQ2907A MMP03467 MMPQ3725 MMPQ3799 MMPQ3904 MMPQ3906 M M PQ 6700M V BR CEO V(BR)CBO Min mA MHz Min mA 40 15 50 40 40 60 40

Contextual Info: SiMIOONgUCTOB PN2369A MMBT2369A SOT-23 MMPQ2369 B SOIC-16 Mark: 1S NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings TA = 25°C unless otherwise noted

154wa

Contextual Info: MMPQ2369* CASE 751B-03, STYLE 1 SO-16 M A X IM U M RATINGS Rating Symbol Value Unit v CEO 15 V dc C o lle c to r-B a s e V o lta g e VCB 40 V dc E m itte r-B a s e V o lta g e Ve b 4.5 V dc 'c 500 m Adc C o lle c to r -E m itte r V o lta g e C o lle c to r C u rre n t — C o n tin u o u s

Contextual Info: PN2369A / MMBT2369A / MMPQ2369 D iscrete P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor PN2369A MMBT2369A SOT-23 MMPQ2369 B SOIC-16 Mark: 1S NPN Switching Transistor This device is designed for high speed saturation switching at collector

Contextual Info: MMPQ2369 Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W)1.9 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MMPQ2369

Abstract: SO16 footprint
Contextual Info: MMPQ2369 Quad Switching Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage VCB 40 Vdc Emitter −Base Voltage VEB 4.5 Vdc IC 500 mAdc Collector Current — Continuous Total Power Dissipation

MMPQ2369

Contextual Info: MOTOROLA Order this document by MMPQ2369/D SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MMPQ2369 NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MMPQ2369 NPN Silicon e E E E irvi G Ej v : E Ej v M otorola Preferred Device : C A S E 7 5 1 B -O S , S T Y L E 4 S O -1 6 MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol Value Unit

Contextual Info: MMPQ2369* CASE 751B-05, STYLE 4 SO-16 M A X IM U M RATINGS Symbol Value v CEO 15 Vdc C ollector-Base V o ltage VCB 40 Vdc E m itter-B ase V o ltage V EB 4.5 Vdc >C 500 m A dc Rating C o lle cto r-E m itte r V o ltage C o lle cto r C u rre n t — C o ntinuous

Contextual Info: MMPQ2369 Quad Switching Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage VCB 40 Vdc Emitter −Base Voltage VEB 4.5 Vdc IC 500 mAdc Collector Current — Continuous Total Power Dissipation

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the