MMBT3904 40V SOT23 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 „ ORDERING INFORMATION Ordering Number

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 „ ORDERING INFORMATION Ordering Number

MMBT3906G-AE3-R

Abstract: VCE30V MMBT3904 MMBT3906 MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R marking 2A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 Lead-free: MMBT3906L Halogen-free: MMBT3906G

MMBT3904-AE3-R

Abstract: MMBT3904G MMBT3904 MMBT3904-AL3-R MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 Lead-free: MMBT3904L Halogen-free: MMBT3904G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 „ ORDERING INFORMATION Ordering Number Normal

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES  * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904  ORDERING INFORMATION Ordering Number Note:

mmbt3904 complementary

Abstract: MMBT3904-AE3-R MMBT3904 MMBT3904-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 *Pb-free plating product number: MMBT3904L „

MMBT3906 UTC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 „ ORDERING INFORMATION Ordering Number Lead Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906  ORDERING INFORMATION Ordering Number

MMBT3904G-AE3-R

Abstract: MMBT3904G-AL3-R MMBT3904L-AE3-R MMBT3904 MMBT3904-AE3-R MMBT3904-AL3-R MMBT3904G MMBT3904L MMBT3904L-AL3-R MMBT3906
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 Lead-free: MMBT3904L Halogen-free: MMBT3904G

MMBT3906

Abstract: MMBT3906 SOT-23 MMBT3906-2A MMBT3906 2A MMBT3904 2A sot-23 MMBT3906 galaxy mmbt3906 2a sot-23
Contextual Info: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN type available MMBT3906 Pb Lead-free MMBT3904 . z Low Current (Max:-100mA). z Low Voltage(Max:-40v). APPLICATIONS

sot23 marking 1AM

Abstract: sot 23 marking code 1AM MMBT3904 transistor 1am sot-23 Marking 1am 1am sot-23 1AM marking transistor MV TRANSISTOR SOT23 1aM sot-23 transistor 1AM transistor
Contextual Info: BL Galaxy Electrical Production specification NPN SWITCHING TRANSISTOR FEATURES z Epitaxial planar die construction. z Complementary PNP type available MMBT3904 Pb Lead-free MMBT3906 . z Collector Current Capability Ic=200mA. z Collector-emitter Voltage VCEO=40V.

MMBT3904

Abstract: K1N diodes MMBT3904Q-7-F sot23 marking C1N k1n sot-23 marking
Contextual Info: MMBT3904 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching

Contextual Info: MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data •         Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

MMBT3906

Contextual Info: MMBT3906 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data •         Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free & Fully RoHS compliant Notes 1 & 2

MARKING 2A

Abstract: MMBT3904 SOT-23 MMBT3906-AE3-R MMBT3904 MMBT3906 MMBT3906-AL3-R MMBT3906L MMBT3906L-AE3-R MMBT3904 40V SOT23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION 3 1 FEATURES 2 * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC MAX =350mW * Complementary to MMBT3904 SOT-23 3 2 1 SOT-323 *Pb-free plating product number: MMBT3906L

Contextual Info: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,

"marking s1a" sot-23

Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
Contextual Info: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION 3 FEATURES 1 2 * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 SOT-23 3 2 1 SOT-323 *Pb-free plating product number: MMBT3904L

Contextual Info: MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES • • SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V.

MMBT3904

Contextual Info: MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES • • SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V.

Contextual Info: MMBT3904-AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit：inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA

2A marking MMBT3906

Abstract: MARKING 2A MMBT3906-AE3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R MMBT3904 MMBT3906 MMBT3906-AL3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ 3 FEATURES 1 2 SOT-23 * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC MAX =350mW * Complementary to MMBT3904 3 2 1 SOT-323 Lead-free: MMBT3906L Halogen-free:MMBT3906G

MMBT3906

Abstract: MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F
Contextual Info: MMBT3906 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)