MMBT3904 40V SOT23 Search Results
MMBT3904 40V SOT23 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BAV99 |
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Switching Diode, 100 V, 0.215 A, SOT23 |
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TBAS16 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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TBAV70 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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TBAW56 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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BAV70 |
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Switching Diode, 100 V, 0.215 A, SOT23 |
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MMBT3904 40V SOT23 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 ORDERING INFORMATION Ordering Number |
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MMBT3904 350mW MMBT3906 MMBT3904L-AE3-R MMBT3904G-AE3-R MMBT3904L-AL3-R MMBT3904G-AL3-R MMBT3904L-AN3-R MMBT3904G-AN3-R OT-23 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 ORDERING INFORMATION Ordering Number |
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MMBT3904 350mW MMBT3906 MMBT3904L-AE3-R MMBT3904G-AE3-R MMBT3904L-AL3-R MMBT3904G-AL3-R OT-23 OT-323 QW-R206-012 | |
MMBT3906G-AE3-R
Abstract: VCE30V MMBT3904 MMBT3906 MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R marking 2A
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MMBT3906 350mW MMBT3904 MMBT3906L MMBT3906G MMBT3906-AE3-R MMBT3906L-AE3-R MMBT3906G-AE3-R MMBT3906-AL3-R MMBT3906L-AL3-R MMBT3906G-AE3-R VCE30V MMBT3904 MMBT3906 MMBT3906G MMBT3906L marking 2A | |
MMBT3904-AE3-R
Abstract: MMBT3904G MMBT3904 MMBT3904-AL3-R MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906
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MMBT3904 350mW MMBT3906 MMBT3904L MMBT3904G MMBT3904-AE3-R MMBT3904L-AE3-R MMBT3904G-AE3-R MMBT3904-AL3-R MMBT3904L-AL3-R MMBT3904G MMBT3904 MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904L MMBT3906 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 ORDERING INFORMATION Ordering Number Normal |
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MMBT3906 350mW MMBT3904 OT-23 OT-323 MMBT3906-AE3-R MMBT3906L-AE3-R MMBT3906G-AE3-R MMBT3906-AL3-R MMBT3906L-AL3-R | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 ORDERING INFORMATION Ordering Number Note: |
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MMBT3906 350mW MMBT3904 MMBT3906G-AE3-R MMBT3906G-AL3-R MMBT3906G-AN3-R OT-23 OT-323 OT-523 QW-R206-013 | |
mmbt3904 complementary
Abstract: MMBT3904-AE3-R MMBT3904 MMBT3904-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906
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MMBT3904 350mW MMBT3906 MMBT3904L MMBT3904-AE3-R MMBT3904L-AE3-R MMBT3904-AL3-R MMBT3904L-AL3-R OT-23 OT-323 mmbt3904 complementary MMBT3904-AE3-R MMBT3904 MMBT3904-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906 | |
MMBT3906 UTCContextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 ORDERING INFORMATION Ordering Number Lead Free |
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MMBT3906 350mW MMBT3904 MMBT3906L-AE3-R MMBT3906G-AE3-R MMBT3906L-AL3-R MMBT3906G-AL3-R MMBT3906L-AN3-R MMBT3906G-AN3-R OT-23 MMBT3906 UTC | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 ORDERING INFORMATION Ordering Number |
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MMBT3904 350mW MMBT3906 MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904G-AN3-R OT-23 OT-323 OT-523 QW-R206-012 | |
MMBT3904G-AE3-R
Abstract: MMBT3904G-AL3-R MMBT3904L-AE3-R MMBT3904 MMBT3904-AE3-R MMBT3904-AL3-R MMBT3904G MMBT3904L MMBT3904L-AL3-R MMBT3906
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MMBT3904 350mW MMBT3906 MMBT3904L MMBT3904G MMBT3904-AE3-R MMBT3904-AL3-R MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3904G-AE3-R MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904L-AE3-R MMBT3904 MMBT3904-AE3-R MMBT3904-AL3-R MMBT3904G MMBT3904L MMBT3904L-AL3-R MMBT3906 | |
MMBT3906
Abstract: MMBT3906 SOT-23 MMBT3906-2A MMBT3906 2A MMBT3904 2A sot-23 MMBT3906 galaxy mmbt3906 2a sot-23
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MMBT3906 MMBT3904) -100mA) OT-23 BL/SSSTC062 MMBT3906 MMBT3906 SOT-23 MMBT3906-2A MMBT3906 2A MMBT3904 2A sot-23 MMBT3906 galaxy mmbt3906 2a sot-23 | |
sot23 marking 1AM
Abstract: sot 23 marking code 1AM MMBT3904 transistor 1am sot-23 Marking 1am 1am sot-23 1AM marking transistor MV TRANSISTOR SOT23 1aM sot-23 transistor 1AM transistor
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MMBT3904 MMBT3906) 200mA. OT-23 BL/SSSTC061 sot23 marking 1AM sot 23 marking code 1AM MMBT3904 transistor 1am sot-23 Marking 1am 1am sot-23 1AM marking transistor MV TRANSISTOR SOT23 1aM sot-23 transistor 1AM transistor | |
MMBT3904
Abstract: K1N diodes MMBT3904Q-7-F sot23 marking C1N k1n sot-23 marking
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MMBT3904 MMBT3906) AEC-Q101 J-STD-020 MIL-STD-202, DS30036 MMBT3904 K1N diodes MMBT3904Q-7-F sot23 marking C1N k1n sot-23 marking | |
Contextual Info: MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) |
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MMBT3904 MMBT3906) AEC-Q101 J-STD-020 MIL-STD-202, DS30036 | |
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MMBT3906Contextual Info: MMBT3906 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free & Fully RoHS compliant Notes 1 & 2 |
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MMBT3906 MMBT3904 AEC-Q101 J-STD-020 MIL-STD-202, DS30059 MMBT3906 | |
MARKING 2A
Abstract: MMBT3904 SOT-23 MMBT3906-AE3-R MMBT3904 MMBT3906 MMBT3906-AL3-R MMBT3906L MMBT3906L-AE3-R MMBT3904 40V SOT23
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MMBT3906 350mW MMBT3904 OT-23 OT-323 MMBT3906L MMBT3906-AE3-R MMBT3906L-AE3-R MMBT3906-AL3-R MMBT3906L-AL3-R MARKING 2A MMBT3904 SOT-23 MMBT3906-AE3-R MMBT3904 MMBT3906 MMBT3906-AL3-R MMBT3906L MMBT3906L-AE3-R MMBT3904 40V SOT23 | |
Contextual Info: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc, |
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MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC OT-23, MIL-STD-750, | |
"marking s1a" sot-23
Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
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MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC OT-23, MIL-STD-750, "marking s1a" sot-23 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION 3 FEATURES 1 2 * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 SOT-23 3 2 1 SOT-323 *Pb-free plating product number: MMBT3904L |
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MMBT3904 350mW MMBT3906 OT-23 OT-323 MMBT3904L MMBT3904-AE3-6-R MMBT3904-AL3-6-R | |
Contextual Info: MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES • • SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. |
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MMBT3904 OT-23 200mA 17-Dec-2009 | |
MMBT3904Contextual Info: MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES • • SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. |
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MMBT3904 OT-23 200mA 30-Aug-2010 MMBT3904 | |
Contextual Info: MMBT3904-AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit:inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA |
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MMBT3904-AU OT-23 200mA 300MHz 10mAdc, 20Vdc 100MHz TS16949 AEC-Q101 2002/95/EC | |
2A marking MMBT3906
Abstract: MARKING 2A MMBT3906-AE3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R MMBT3904 MMBT3906 MMBT3906-AL3-R
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MMBT3906 OT-23 350mW MMBT3904 OT-323 MMBT3906L MMBT3906G MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906L-AE3-R 2A marking MMBT3906 MARKING 2A MMBT3906-AE3-R MMBT3906G MMBT3906L MMBT3904 MMBT3906 MMBT3906-AL3-R | |
MMBT3906
Abstract: MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F
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MMBT3906 MMBT3904) AEC-Q101 J-STD-020 MIL-STD-202, DS30059 MMBT3906 MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F |