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    MMBT4401LT1 Search Results

    MMBT4401LT1 Datasheets (13)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MMBT4401LT1
    Avic Electronics SOT-23 Plastic-Encapsulate Transistors Original PDF 29.99KB 1
    MMBT4401LT1
    Leshan Radio Company General Purpose Transistor(NPN Silicon) Original PDF 262.97KB 5
    MMBT4401LT1
    Motorola SWITCHING TRANSISTOR Original PDF 306.87KB 8
    MMBT4401LT1
    On Semiconductor Small Signal Switching Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF 207.19KB 7
    MMBT4401LT1
    On Semiconductor Small SignalSwitch Original PDF 156.1KB 8
    MMBT4401LT1
    On Semiconductor Switching Transistor NPN Original PDF 157.81KB 8
    MMBT4401LT1
    On Semiconductor Switching Transistor NPN Original PDF 217.66KB 8
    MMBT4401LT1
    Yangzhou Yangjie Electronic Plastic-Encapsulate Transistor Scan PDF 199.95KB 1
    MMBT4401LT1/D
    On Semiconductor Motorola Preferred Device Original PDF 217.66KB 8
    MMBT4401LT1-D
    On Semiconductor Switching Transistor NPN Silicon Original PDF 157.8KB 8
    MMBT4401LT1G
    On Semiconductor Switching Transistor(NPN Silicon) Original PDF 156.09KB 8
    MMBT4401LT1G
    On Semiconductor Small Signal Switching Transistor-NPN (lead free); Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF 207.19KB 7
    MMBT4401LT1G
    On Semiconductor Switching Transistor Original PDF 157.81KB 8
    SF Impression Pixel

    MMBT4401LT1 Price and Stock

    onsemi

    onsemi SMMBT4401LT1G

    TRANS NPN 40V 0.6A SOT23-3
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    SMMBT4401LT1G Digi-Reel 46,157 1
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    SMMBT4401LT1G Reel 45,000 3,000
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    SMMBT4401LT1G Reel 9,000
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    onsemi MMBT4401LT1G

    TRANS NPN 40V 0.6A SOT23-3
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    MMBT4401LT1G Reel 15,000 3,000
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    MMBT4401LT1G Ammo Pack 13 Weeks, 4 Days 1
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    MMBT4401LT1G Ammo Pack 111 Weeks 5
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    MMBT4401LT1G Reel 10 Weeks 3,000
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    Mouser Electronics MMBT4401LT1G
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    Verical () MMBT4401LT1G 3,354,000 3,000
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    MMBT4401LT1G 243,000 6,000
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    MMBT4401LT1G 11,266 626
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    MMBT4401LT1G Cut Strips 11,266 10 Weeks 1
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    Newark () MMBT4401LT1G Reel 15,000 3,000
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    MMBT4401LT1G Cut Tape 9,326 1
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    MMBT4401LT1G Cut Tape 1,910 1
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    Onlinecomponents.com MMBT4401LT1G 243,000
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    MMBT4401LT1G 16,487 56
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    MMBT4401LT1G 8,183
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    Rochester Electronics MMBT4401LT1G 3,120 1
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    Ameya Holding Limited MMBT4401LT1G 1,673
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    ComSIT USA MMBT4401LT1G 13,788
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    onsemi MMBT4401LT1

    - Tape and Reel (Alt: MMBT4401LT1)
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    Avnet Americas MMBT4401LT1 Reel 111 Weeks 3,000
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    MMBT4401LT1 8,577 89
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    onsemi MMBT4401LT1G.

    Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:250Mhzrohs Compliant: Yes |Onsemi MMBT4401LT1G.
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    onsemi MMBT4401LT1G (5450371)

    Transistor, Bipolar, Si, NPN, Switching, VCEO 40VDC, IC 600mA, PD 225mW, SOT-23,hFE 40
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    RS MMBT4401LT1G (5450371) Bulk 50
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    MMBT4401LT1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mmbt4401lt1g

    Abstract: MMBT4401LT1 MMBT4401LT3G
    Contextual Info: MMBT4401LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage


    Original
    MMBT4401LT1G OT-23 O-236) MMBT4401LT1/D mmbt4401lt1g MMBT4401LT1 MMBT4401LT3G PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4401LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current 0.6 A ICM: Collector-base voltage


    Original
    OT-23 OT-23 MMBT4401LT1 150mA 500mA MMBT4401LT1 100MHz PDF

    1N916

    Abstract: MMBT4401LT1
    Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon MMBT4401LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage


    Original
    MMBT4401LT1 236AB) Temperatu02 1N916 MMBT4401LT1 PDF

    MMBT4401LT1

    Contextual Info: ON Semiconductort Switching Transistor MMBT4401LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC 600


    Original
    MMBT4401LT1 r14525 MMBT4401LT1/D MMBT4401LT1 PDF

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3
    Contextual Info: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original
    MMBT4401LT1 MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3 PDF

    MMBT4401LT1

    Abstract: DSA0038472
    Contextual Info: MOTOROLA Order this document by MMBT4401LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT4401LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO


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    MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1/D* MMBT4401LT1 DSA0038472 PDF

    MMBT4401LT1

    Abstract: MMBT4403LT1
    Contextual Info: MMBT4403LT1 PNP Silicon General Purpose Transistor As complementary types the NPN transistor MMBT4401LT1 is recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage


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    MMBT4403LT1 MMBT4401LT1 OT-23 4403LT1 10Vdc, 30Vdc, 150mAdc, 15mAdc MMBT4403LT1 PDF

    Contextual Info: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original
    MMBT4401LT1 PDF

    MMBT4401LT1

    Abstract: marking 2X SOT23
    Contextual Info: @vic SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4401LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current 0.6 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original
    OT-23 OT-23 MMBT4401LT1 150mA 500mA MMBT4401LT1 100MHz marking 2X SOT23 PDF

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3 MMBT4401LT3G
    Contextual Info: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc


    Original
    MMBT4401LT1 MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3 MMBT4401LT3G PDF

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3G
    Contextual Info: MMBT4401LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage


    Original
    MMBT4401LT1G MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3G PDF

    BT4401LT1

    Abstract: bt4401
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor MMBT4401LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit v CEO 40 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-Base Voltage vebo 6.0 Vdc


    OCR Scan
    MMBT4401LT1 O-236AB) 3b7255 BT4401LT1 bt4401 PDF

    Contextual Info: M AXIMUM RATINGS Symbol Value C o lle ctor-E m itter Voltage Rating v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc 'c 600 m Adc Symbol Max Unit Pd 225 mW 1.8 m W:'JC Collector C urrent — C ontinuous Unit MMBT4401LT1*


    OCR Scan
    MMBT4401LT1* OT-23 O-236AB) PDF

    BT4401LT1

    Abstract: BT4401
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor MMBT4401LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 % MAXIMUM RATINGS Rating Symbol C ollector-E m itter Voltage Value Unit VCEO 40 Vdc C ollector-B ase Voltage VCBO 60 Vdc E m itter-B ase Voltage


    OCR Scan
    MMBT4401LT1 OT-23 O-236AB) BT4401LT1 BT4401LT1 BT4401 PDF

    Contextual Info: ON Semiconductort Switching Transistor MMBT4401LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC


    Original
    MMBT4401LT1 236AB) PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT4401LT1 1. BASE TRANSISTOR(NPN ) 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.3 W (Tamb=25℃) Collector current ICM : 0.6


    Original
    OT-23 MMBT4401LT1 100MHz 037TPY 950TPY 550REF 022REF PDF

    MBT4401

    Abstract: LMBT44 MBT4401LT1
    Contextual Info: WILLAS FM120-M+ MMBT4401LT1 THRU Purpose Transistor FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation ••Batch We declare that


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    FM120-M+ MMBT4401LTHRU FM1200-M+ OD-123+ FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH MBT4401 LMBT44 MBT4401LT1 PDF

    Contextual Info: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original
    MMBT4401LT1 MMBT4401LT1/D PDF

    MMBT4401LT1

    Contextual Info: MMBT4401LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.225 W (Tamb=25 C) Pluse Drain I CM : 0.6 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE


    Original
    MMBT4401LT1 OT-23 100mA 500mA MMBT4401LT1 PDF

    Contextual Info: : S v m Se m i ; 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors MMBT4401LT1 FEATURES Power dissipation PCM : 0.3 W Collector current TRANSISTOR NPN (Tamb=25 °C) I cm • 0.6 A Collector base voltage V (br)cbo :60 V Operating and storage junction temperature range


    OCR Scan
    MMBT4401LT1 100MHz OT-23 950TPY 037TPY 550REF 022REF PDF

    MMBT4401LT1

    Contextual Info: MMBT4401LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.225 W (Tamb=25 C) Pluse Drain I CM : 0.6 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE


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    MMBT4401LT1 OT-23 100mA 500mA MMBT4401LT1 PDF

    Sc59

    Abstract: SO16 package
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT4401LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO


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    MMBT4401LT1 236AB) 300NOT Sc59 SO16 package PDF

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3 MMBT4401LT3G wcs10
    Contextual Info: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc


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    MMBT4401LT1 MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3 MMBT4401LT3G wcs10 PDF

    Contextual Info: RECTRON SEMICONDUCTOR MMBT4401LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range


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    MMBT4401LT1 OT-23 -55OC 150OC OT-23 MIL-STD-202E PDF