MMBT5551 3S Search Results

BF242

Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C C B E TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol

2N5551B

Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2n5551

Abstract: 2N5551 SOT23 MMBT5551
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N5551

Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBT5550

Abstract: MMBT5551 MMBT5401
Contextual Info: MMBT5551 MMBT5551 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2007-11-09 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1

Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol

2N5551

Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol

2n5551

Abstract: 2N5551 SOT23
Contextual Info: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1

2N5551

Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: MMBT5550 / MMBT5551 MMBT5550 / MMBT5551 Surface Mount General Purpose Si-Epitaxial Planar Transistors Vielzweck Si-Epitaxial-Planar-Transistoren für die Oberflächenmontage NPN NPN Version 2006-05-09 1.1 2.9 ±0.1 0.4 Type Code 1 1.3±0.1 2.5 max 3 2 1.9

FMBM5551

Abstract: MMBT5551
Contextual Info: FMBM5551 NPN General Purpose Amplifier • This device has matched dies • Sourced from process 16. • See MMBT5551 for characteristics C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .3S2 Dot denotes pin #1 Absolute Maximum Ratings * Symbol Parameter Value

Contextual Info: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data

FMBM5551

Abstract: MMBT5551
Contextual Info: FMBM5551 NPN General Purpose Amplifier • This device has matched dies • Sourced from process 16. • See MMBT5551 for characteristics C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .3S2 Dot denotes pin #1 Absolute Maximum Ratings * Value Units VCEO Symbol

Contextual Info: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 -H : h“ A TO P VIEW Mechanical Data_

2N5551

Abstract: MMBT5551
Contextual Info: MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N5551

Abstract: MMBT5551 2N5551C
Contextual Info: MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

FMBM5551

Abstract: MMBT5551
Contextual Info: FMBM5551 NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package Features • This device has matched dies • Sourced from process 16. • See MMBT5551 for characteristics C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .3S2 Dot denotes pin #1 Absolute Maximum Ratings *

Contextual Info: NEW PRODUCT MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data

Contextual Info: S g M iS D r o U C roR :w 2N5551 MMBT5551 Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum RatinQS TA = 25°C unless otherwise noted

Marking Code 2F

Abstract: 250-600
Contextual Info: ilAIEC Dffi SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - TO-236 PACKAGE Type Number MMBT2222A IMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 CEO Marking Code 1P 1N 2X 1H 1G 3S 1D 40 40 40 60 80 160 300 1 ' c b o VCB h FE ® 100-300 100-300 100-300

FMB5551

Abstract: MMBT5551 1MA160
Contextual Info: FMB5551 FMB5551 C2 NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package E1 C1 • This device is designed for general purpose high voltage amplifiers and gas discharge display driving. • Sourced from process 16. • See MMBT5551 for characteristics.

2N5551

Abstract: MMBT5551
Contextual Info: N MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available M M B T5401 Ideal for Medium Power Amplification and Switching SOT-23 -H : h“ A TO P VIEW Mechanical Data_ Case: SO T-23, Molded Plastic

MMBT5401

Abstract: MMBT5551
Contextual Info: MMBT5551 v is H A Y NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available M M B T5401 Ideal for Medium Power Amplification and Switching SOT-23 -H