MMBT901 Search Results

UTC 225

Abstract: MMBT9015G MMBT9014
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 „ ORDERING INFORMATION Ordering Number Lead Free

mmbt9013

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012

MMBT9013

Abstract: MMBT9012
Contextual Info: MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

MMBT9018

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9018 AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER NPN SILICON TRANSISTOR 3 1 2 „ * High Current Gain Bandwidth Product fT=1.1GHz Typ 3 2 „ SOT-23 FEATURES 1 SOT-523 ORDERING INFORMATION Ordering Number Pin Assignment

MMBT9012

Contextual Info: MMBT9012 PNP Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the NPN transistors MMBT9013 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER

MMBT9012H

Abstract: MMBT9012G MMBT9013G MMBT9013H
Contextual Info: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol

mmbt9015

Abstract: MMBT9014B MMBT9014C MMBT9014D
Contextual Info: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

MMBT9014B

Abstract: MMBT9014C MMBT9014D
Contextual Info: MMBT9014BLT1 / MMBT9014CLT1 / MMBT9014DLT1 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the PNP transistor MMBT9015BLT1, MMBT9015CLT1 and MMBT9015DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

9013G

Abstract: 9012 transistor sot-23 9012 pnp MMBT9012LT1
Contextual Info: MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9013G Collector Current :Ic=-500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW

Contextual Info: UTC MMBT9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9015 2 1 MARKING 3 14 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )

MMBT9015DLT1

Abstract: MMBT*9015c MMBT9015B MMBT9015C MMBT9014C
Contextual Info: MMBT9015BLT1 / MMBT9015CLT1 / MMBT9015DLT1 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014BLT1, MMBT9014CLT1 and MMBT9014DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

fm tuner ic

Abstract: Sat Tuner Tuner sat MMBT9018G MMBT9018H NPN Silicon Epitaxial Planar Transistor
Contextual Info: MMBT9018G / MMBT9018H NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage

MMBT9018G

Abstract: MMBT9018H
Contextual Info: MMBT9018GLT1 / MMBT9018HLT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 *Pb-free plating product number: MMBT9014L „

MMBT9014

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 „ ORDERING INFORMATION Ordering Number Lead Free

MMBT*9015c

Abstract: MMBT9015C MMBT9014B MMBT9014C MMBT9014D MMBT9015B MMBT9015
Contextual Info: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC

MMBT9018G

Abstract: MMBT9018H
Contextual Info: MMBT9018GLT1 / MMBT9018HLT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO

MMBT9013G

Abstract: MMBT9013H MMBT9012G MMBT9012H
Contextual Info: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol

Contextual Info: MMBT9018 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Description SC-59 A L The MMBT9018 is designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner.

MMBT9015LT1

Contextual Info: MMBT9015LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to MMPT9014LT1 Collector-current:Ic=-100mA Collector-Emiller Voltage:V CE =-45V 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS

MMBT9013

Contextual Info: MMBT9013 NPN Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the PNP transistors MMBT9012 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER

MMBT9014

Contextual Info: MMBT9014 NPN Silicon Epitaxial Planar Transistors For switching and AF amplifier applications As complementary types the PNP transistors MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  3 FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION

MMBT9013

Abstract: MMBT9012 MMBT9013L
Contextual Info: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1