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    MMBT9012 Search Results

    MMBT9012 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT9012 Unisonic Technologies 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Original PDF

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    mmbt9013

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012


    Original     		PDF MMBT9013 625mW) 500mA) MMBT9012 MMBT9013-x-AE3-R MMBT9013L-x-AE3-R MMBT9013G-x-AE3-R OT-23 QW-R206-021 mmbt9013

    MMBT9013

    Abstract: MMBT9012
    Text: MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage


    Original     		PDF MMBT9013 MMBT9012 OT-23 MMBT9013

    MMBT9012

    Abstract: No abstract text available
    Text: MMBT9012 PNP Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the NPN transistors MMBT9013 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER


    Original     		PDF MMBT9012 MMBT9013 OT-23 MMBT9012

    MMBT9012H

    Abstract: MMBT9012G MMBT9013G MMBT9013H
    Text: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol


    Original     		PDF MMBT9012G MMBT9012H MMBT9013G MMBT9013H OT-23 500mA, 50MHz MMBT9012H

    9013G

    Abstract: 9012 transistor sot-23 9012 pnp MMBT9012LT1
    Text: MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9013G Collector Current :Ic=-500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW


    Original     		PDF MMBT9012LT1 OT-23 9013G -500mA 225mW 9013G 9012 transistor sot-23 9012 pnp MMBT9012LT1

    MMBT9013G

    Abstract: MMBT9013H MMBT9012G MMBT9012H
    Text: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol


    Original     		PDF MMBT9013G MMBT9013H MMBT9012G MMBT9012H OT-23 MMBT9013 500mA, 50MHz MMBT9013H

    MMBT9013

    Abstract: No abstract text available
    Text: MMBT9013 NPN Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the PNP transistors MMBT9012 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER


    Original     		PDF MMBT9013 MMBT9012 OT-23 MMBT9013

    MMBT9013

    Abstract: MMBT9012 MMBT9013L
    Text: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1


    Original     		PDF MMBT9013 625mW) 500mA) MMBT9012 OT-23 MMBT9013L QW-R206-021 MMBT9013 MMBT9012 MMBT9013L

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 1


    Original     		PDF MMBT9012 625mW) -500mA) MMBT9013 OT-23 QW-R206-020

    9013G

    Abstract: 9012 SOT-23 9012 pnp MMBT9012LT1 9012 transistor sot-23 transistor SOT23 PD j6 9012 SOT23 MMBT901
    Text: MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9013G Collector Current :Ic=-500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW


    Original     		PDF MMBT9012LT1 OT-23 9013G -500mA 225mW 9013G 9012 SOT-23 9012 pnp MMBT9012LT1 9012 transistor sot-23 transistor SOT23 PD j6 9012 SOT23 MMBT901

    MMBT9012

    Abstract: MMBT9013 ,MARKING 12. SOT-23 UTC 225
    Text: UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 1


    Original     		PDF MMBT9012 625mW) -500mA) MMBT9013 OT-23 QW-R206-020 MMBT9012 MMBT9013 ,MARKING 12. SOT-23 UTC 225

    MMBT9012H

    Abstract: MMBT9012HLT1 MMBT9012G MMBT9012 MMBT9013
    Text: MMBT9012GLT1 / MMBT9012HLT1 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013GLT1 and MMBT9013HLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


    Original     		PDF MMBT9012GLT1 MMBT9012HLT1 MMBT9013GLT1 MMBT9013HLT1 OT-23 500mA, 50MHz MMBT9012H MMBT9012HLT1 MMBT9012G MMBT9012 MMBT9013

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1


    Original     		PDF MMBT9013 625mW) 500mA) MMBT9012 OT-23 QW-R206-021

    MMBT9012G

    Abstract: MMBT9012H MMBT9013G MMBT9013H
    Text: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter


    Original     		PDF MMBT9012G MMBT9012H MMBT9013G MMBT9013H OT-23 MMBT9012G MMBT9012H

    MMBT9012G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9012 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3  FEATURES 2 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013


    Original     		PDF MMBT9012 625mW) -500mA) MMBT9013 OT-23 O-236) MMBT9012G-x-AE3-R QW-R206-020 MMBT9012G

    MMBT9013H

    Abstract: MMBT9012G MMBT9012H MMBT9013G
    Text: MMBT9013G / MMBT9013H NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012G and MMBT9012H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter


    Original     		PDF MMBT9013G MMBT9013H MMBT9012G MMBT9012H OT-23 MMBT9013G MMBT9013H

    MMBT9012G

    Abstract: MMBT9012H
    Text: MMBT9012GLT1 / MMBT9012HLT1 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013GLT1 and MMBT9013HLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


    Original     		PDF MMBT9012GLT1 MMBT9012HLT1 MMBT9013GLT1 MMBT9013HLT1 OT-23 500mA, 50MHz MMBT9012G MMBT9012H

    MMBT9013

    Abstract: MMBT9012
    Text: MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage


    Original     		PDF MMBT9012 MMBT9013 OT-23 MMBT9012

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3  FEATURES 2 *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012


    Original     		PDF MMBT9013 625mW) 500mA) MMBT9012 OT-23 O-236) MMBT9013G-x-AE3-R QW-R206-021

    MMBT9012G

    Abstract: MMBT9012H MMBT9013G MMBT9013H
    Text: MMBT9012G / MMBT9012H PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors MMBT9013G and MMBT9013H are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter


    Original     		PDF MMBT9012G MMBT9012H MMBT9013G MMBT9013H OT-23 MMBT9012G MMBT9012H

    MMBT9013

    Abstract: MMBT9012
    Text: UNISONIC TECHNOLOGIES CO., MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012


    Original     		PDF MMBT9013 625mW) 500mA) MMBT9012 MMBT9013L MMBT9013-x-AE3-R MMBT9013L-x-AE3-R OT-23 QW-R206-021 MMBT9013 MMBT9012

    XL1225 equivalent

    Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
    Text: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055


    Original     		PDF 2N2955 2SA952 2N3055 2SB1426 2N3417 XL1225 equivalent 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent

    BC547 sot package sot-23

    Abstract: BC547 sot23 BC557 sot-23 BC557 sot package sot-23 BC556 sot package sot-23 2sa1015 sot-23 2SC945 SOT-23 bc548 sot23 2sb772 TO92 PCR306
    Text: DC Components - Cross Reference Industry Type No. DC Type 2N2955 2N2955 TO-3 2N3055 2N3055 TO-3 2SB1426 2SB1426 2SB507 2SB507 TO-220AB 2N3772 2N3772 TO-3 2SB564A 2SB564A 2N3773 2N3773 TO-3 2N3904 2N3904 TO-92 2SB772 2SB772 TO-126 2N3906 2N3906 TO-92 2SB857 2SB857 TO-220AB


    Original     		PDF 2N2955 2N3055 2SB1426 2SB507 O-220AB 2N3772 BC547 sot package sot-23 BC547 sot23 BC557 sot-23 BC557 sot package sot-23 BC556 sot package sot-23 2sa1015 sot-23 2SC945 SOT-23 bc548 sot23 2sb772 TO92 PCR306

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD MMBT9013 NPN SILICON TRANSISTOR 1 W OU T PU T AM PLI FI ER OF POT ABLE RADI OS I N CLASS B PU SH -PU LL OPERAT I ON ̈ FEAT U RES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity.


    Original     		PDF MMBT9013 625mW) 500mA) MMBT9012 MMBT9013-x-AE3-R MMBT9013L-x-AE3-R MMBT9013G-x-AE3-R OT-23 QW-R206-021