MMBTA42 Search Results

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

Contextual Info: MMBTA42 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBTA92 MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic

Contextual Info: MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBTA42 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW • • • • •

sot-23 marking k3r

Abstract: K3R transistor K3R marking MARKING CODE CCB J-STD-020A MMBTA42 MMBTA92
Contextual Info: MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBTA42 Ideal for Medium Power Amplification and Switching SOT-23 A C B Mechanical Data B TOP VIEW E D E · · · · ·

MMBTA42LT1G

Abstract: MMBTA42 MMBTA42LT3G MMBTA43 MMBTA43LT1G
Contextual Info: MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Characteristic Collector −Emitter Voltage Collector −Base Voltage

1D TRANSISTOR

Abstract: MMBTA42E
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors MMBTA42E TRANSISTOR C DESCRIPTION NPN Epitaxial Silicon Transistor WBFBP-03A 1.6x1.6×0.5 unit: mm FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) TOP B APPLICATION

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA42 Features • • • • Surface Mount SOT-23 Package Capable of 300mWatts of Power Dissipation Continuous Collector Current : 300mA

SA42

Contextual Info: I U Discrete POWER & Signal Technologies P S E M IC O N D U C T O R MPSA42 MMBTA42 SOT-23 PZTA42 B SOT-223 M ark: 1D NPN High Voltage Amplifier T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n a s a v id e o o u tp u t to d riv e c o lo r C R T a n d o th e r high v o lta g e a p p lic a tio n s . S o u rc e d

CBVK741B019

Abstract: F63TNR MMBTA42 MPSA42 PN2222N PZTA42
Contextual Info: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR NPN SOT-23 FEATURES 1. BASE z High breakdown voltage z Low collector-emitter saturation voltage z Complementary to MMBTA92(PNP) 2. EMITTER 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors MMBTA42E TRANSISTOR C DESCRIPTION NPN Epitaxial Silicon Transistor WBFBP-03A 1.6x1.6×0.5 unit: mm FEATURES Power dissipation PCM : 0.15 W (Tamb=25℃) TOP B APPLICATION

Contextual Info: ON Semiconductort High Voltage Transistor MMBTA42LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Symbol MMBTA43 Unit Collector–Emitter Voltage Rating VCEO 200 Vdc Collector–Base Voltage VCBO 200 Vdc Emitter–Base Voltage VEBO 6.0 Vdc

Contextual Info: UTC MMBTA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. 2 1 FEATURES *Collector-Emitter voltage: VCEO=300V *High current gain *Collector Dissipation:

Contextual Info: MMBTA42 High-Voltage NPN Transistor Surface Mount COLLECTOR 3 SOT-23 3 1 BASE * “G” Lead Pb -Free 1 2 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO

Contextual Info: MMBTA92LT1 / MMBTA93LT1 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the NPN transistors MMBTA42LT1 and MMBTA43LT1 are recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package

TRANSISTOR a4w

Contextual Info: MMBTA42W NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 150 mWatts FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current I C = 500mA • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std. .

1D SOT23

Abstract: sot23 marking 1d transistor SOT23 1d 1d sot-23 marking
Contextual Info: MMBTA42 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High breakdown voltage — Low collector-emitter saturation voltage — Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

sot-23 marking k3r

Abstract: 2MMBTA92
Contextual Info: MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBTA42 Ideal for Medium Power Amplification and Switching SOT-23 · · · Min Max 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D

Contextual Info: MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBTA92 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data · · · · · C E B D E

42-7-F

Abstract: 427F MMBTA42 MMBTA92
Contextual Info: MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBTA92 Ideal for Low Power Amplification and Switching

ta42

Abstract: TA-42
Contextual Info: MAXIMUM RATINGS Symbol MMBTA42 MMBTA43 Unit C o lle cto r-E m itte r V o ltage Rating VCEO 300 200 Vdc C ollector-B ase V o ltage VCBO 300 200 Vdc Em itter-B ase V o ltage Ve bo 6.0 C o lle ctor C u rrent — C o n tin u o u s 6.0 Vdc m A dc 500 >C MMBTA42LT1*

MMBTA42LT1G

Contextual Info: MMBTA42L, MMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • COLLECTOR 3 Site and Control Change Requirements

Contextual Info: SEMICONDUCTOR MMBTA92/93 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. E B L FEATURES L D ・Complementary to MMBTA42/43. H MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING 3 G A 2 1 UNIT Q MMBTA93 Collector-Emitter

MMBTA42 AAX

Abstract: marking AAX
Contextual Info: SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. E B L FEATURES L D ・Complementary to MMBTA92/93. H 1 MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING 3 G A 2 UNIT Q Voltage MMBTA43