MMBTA44 Search Results

MMBTA44

Contextual Info: SEMICONDUCTOR MMBTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. Collector Power Dissipation : PC=350mW. MAXIMUM RATING Ta=25 CHARACTERISTIC SYMBOL RATING UNIT Collector-BaseVoltage VCBO 450

MMBTA44 3d

Abstract: 3D sot23 sot-23 Marking 3D MMBTA44 3D marking sot23 1FR510
Contextual Info: MMBTA44 High-Voltage NPN Transistor Surface Mount COLLECTOR 3 SOT-23 3 1 BASE 1 2 2 EMITTER Maximum Ratings Rating C ollector-E mitter V oltage C ollector-B as e V oltage E mitter-B as e V Oltage C ollector C urrent-C ontinuous Symbol VCEO VCBO VEBO IC Value

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W

MMBTA44 3d

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W

MMBTA44

Abstract: MPSA44
Contextual Info: MMBTA44 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor 625mW SOT-23 A Mechanical Data D l Case: SOT-23, Molded Plastic

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS  FEATURES 3 *Collector-Emitter voltage: VCEO=400V UTC MMBTA44 VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW

Contextual Info: SEMICONDUCTOR MMBTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES ・High Breakdown Voltage. ・Collector Power Dissipation : PC=350mW. E B L D L H UNIT Collector-BaseVoltage VCBO 450 V Collector-EmitterVoltage VCEO 400

MMBTA44

Abstract: marking a44 transistor marking wn A44 transistor
Contextual Info: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 400 Volts POWER SOT- 23 225 mWatts Unit: inch mm FEATURES .056(1.40) .103(2.60) • Collector current I C = 300mA • In compliance with EU RoHS 2002/95/EC directives .047(1.20) .119(3.00) .110(2.80) • Collector-emitter voltage VCE = 400V

Contextual Info: MMBTA44 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A FEATURES L S Power dissipation 2 PCM: 3 Top View 1 0.35 W D Collector current ICM: B G 0.3 A Collector-base voltage

Contextual Info: MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 1 3D 2 K E 2 D PACKING INFORMATION

MMBTA44

Abstract: MMBTA94
Contextual Info: MMBTA44 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor MMBTA94 is recommended. On special request, these transistors can be

eb6 sot23

Contextual Info: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR POWER 400 Volts 225 mWatts SOT-23 Unit：inch mm • Silicon, planar design 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA ‡*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG +DORJHQ)UHH

Contextual Info: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 400 Volt POWER 225 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • Silicon, planar design 0.110(2.80) • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • Lead free in compliance with EU RoHS 2011/65/EU directive

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS „ FEATURES *Collector-Emitter voltage: VCEO=400V UTC MMBTA44 VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW

Contextual Info: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 400 Volts 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026

MMBTA44 3d

Abstract: transistor k 975
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W

Contextual Info: SEMICONDUCTOR MMBTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES 2008. 3. 10 Revision No : 2 1/2

Contextual Info: SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1.02 FEATURES W (Tamb=25℃) 1.60±0.05 0.35 1.9 Collector current ICM: 0.3 A Collector-base voltage V(BR)CBO: 500 V Operating and storage junction temperature range

Jiangsu Changjiang Electronics Technology

Abstract: 3D NPN 400V 3d sot-23 MMBTA44
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES 0.35 W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current 0.2 A ICM: Collector-base voltage

MMBTA44

Abstract: TRANSISTOR MARKING 3D
Contextual Info: MMBTA44 SOT-23-3L MMBTA44 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES 0.35 W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 0.2 A Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range 2. 80¡ À0. 05

MMBTA44 3D

Abstract: MMBTA44 MPSA44 3D NPN 400V sot-23 Marking 3D MMBTA45 3101S
Contextual Info: UTC MMBTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V MMBTA44 VCEO=350V(MMBTA45) *Collector current up to 300mA *Complement to MMBTA94/93 *Collector Dissipation: Pc(max)=350mW 2 1 3 APPLICATION

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor 625mW SOT-23 A Mechanical Data D

MMBTA94LT1

Contextual Info: MMBTA44LT1 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor MMBTA94LT1 is recommended. On special request, these transistors can be

Contextual Info: MMBTA44 High-Voltage NPN Transistor Surface Mount COLLECTOR 3 SOT-23 3 1 BASE * “G” Lead Pb -Free 1 2 2 EMITTER Maximum Ratings Rating C ollector-E mitter V oltage C ollector-B as e V oltage E mitter-B as e V Oltage C ollector C urrent-C ontinuous Symbol