MMBV3700 Search Results

Contextual Info: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a

Contextual Info: MMBV3700 SURFACE MOUNT PIN DIODE VOLTAGE 200 Volt POWER 200 mW 0.006 0.15 MIN. FEATURES 0.120(3.04) • High reverse breakdown voltage (200V min) 0.110(2.80) • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical)

MMBV3700LT1G

Abstract: MMBV3700LT1 MPN3700 MPN3700G
Contextual Info: MMBV3700LT1, MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for

Contextual Info: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a

Contextual Info: Silicon Pin Diode MMBV3700LT1 These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for economical, high–volume consumer and industrial requirements. They

U08C

Abstract: G016 CASE318-07
Contextual Info: MOTOROLA SEMICONDUCTOR MMBV3700L MPN3700 TECHNICAL DATA SILICON PIN SWITCHING DIODES HIGH VOLTAGE SILICON PIN DIODES . . . d e s ig n e d p rim a rily fo r V H F b an d sw itch in g a p p licatio n s but also su ita b le fo r use in g e n e ra l-p u rp o s e sw itch in g and a tte n u a to r

sca marking

Contextual Info: HIGH VOLTAGE SILICON PIN DIODES MMBV3700LT1 MPN3700 . . . d e s ig n e d p rim a rily fo r VH F b an d sw itch in g ap p licatio n s but also su itab le fo r use in g en e ra l-p u rp o s e sw itch in g circuits. S u p p lie d in a cost effe ctive plastic p ackage fo r eco n o m ic a l, h ig h -v o lu m e c o n s u m e r and industrial

Contextual Info: MMBV3700 SURFACE MOUNT PIN DIODE 200 Volts POWER SOT-23 200 mW Unit：inch mm • High reverse breakdown voltage (200V min) 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical)

Contextual Info: HIGH VOLTAGE SILICON PIN DIODES MMBV3700LT1 MPN3700 . . . designed prim arily for VHF band switching applications but also suitable for use in general-purpose switching circuits. Supplied in a cost effective plastic package for econom ical, high-volum e consum er and industrial

Contextual Info: MMBV3700LT1G High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for economical, high−volume consumer and industrial requirements.

Contextual Info: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for

MMBV3700LT1

Abstract: MPN3700 motorola MPN3700 SMD310
Contextual Info: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a

MPN3700

Abstract: MMBV3700LT1 SMD310
Contextual Info: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for

MMBV3700

Contextual Info: MMBV3700 SURFACE MOUNT PIN DIODE VOLTAGE 200 Volts POWER 200 mW FEATURES • High reverse breakdown voltage 200V min • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical) • Low capacitance (0.5 pF typical @V R=20V)

MMBV3700LT1

Abstract: MPN3700 SMD310
Contextual Info: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for

MMBV3700LT1G

Abstract: marking 4r
Contextual Info: MMBV3700LT1G High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for economical, high−volume consumer and industrial requirements.

Contextual Info: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a

MPN3700

Abstract: diode MMBV3700LT1 R 2.8 diode MMBV3700LT1 Diode marking 4R
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode MMBV3700LT1 These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for

Contextual Info: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for

Contextual Info: MMBV3700 SURFACE MOUNT PIN DIODE 200 Volts POWER 200 mW SOT-23 Unit：inch mm 0.006(0.15)MIN. FEATURES 0.120(3.04) • High reverse breakdown voltage (200V min) 0.110(2.80) • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical)

MMBV3700LT1

Abstract: MMBV3700LT1G
Contextual Info: MMBV3700LT1 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a cost-effective plastic package for economical, high-volume consumer and industrial requirements.

MMBV3700

Contextual Info: MMBV3700 SURFACE MOUNT PIN DIODE VOLTAGE 200 Volts POWER 200 mW SOT- 23 Unit: inch mm FEATURES .007(.20)MIN .103(2.60) .056(1.40) .047(1.20) • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical)

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty