MMDT3906 Search Results

marking code k3n

Contextual Info: MMDT3906 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage

Contextual Info: NEW PRODUCT MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 C2 A Dim Min Max B1 A 0.10

Contextual Info: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46) .010(0.26) : - 0.2 A C2 Collector -base voltage

k3n transistor

Abstract: marking code k3n sot transistor k3n K3n td J-STD-020A MMDT3906 MMDT3906-7 marking K3N
Contextual Info: MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · C2 B1 Mechanical Data · · · · · · B2 C1 G H Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A

MMDT3906

Abstract: transistor Vbe 1 Vbe 40 transistor
Contextual Info: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 $VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46)

MMDT3906VC

Abstract: MMDT3906VC-7
Contextual Info: SPICE MODEL: MMDT3906VC MMDT3906VC NEW PRODUCT Lead-free Green DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction A Ideal for Low Power Amplification and Switching B2 C1 Ultra-Small Surface Mount Package

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMDT3906 Features • • • • • • • x Halogen free available upon request by adding suffix "-HF"

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • MMDT3906 PNP Small Signal Surface Mount Transistors Ideal for Low Power Amplification and Switching Ultra-small Surface Mount Package

Contextual Info: MMDT3906 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR 200 mWatts POWER 40 Volts SOT-363 Unit：inch mm FEATURES 0.087(2.20) 0.074(1.90) • PNP epitaxial silicon, planar design 0.010(0.25) 0.018(0.45) 0.006(0.15) VOLTAGE 0.087(2.20) 0.078(2.00) • Collector-emitter voltage V CE = -40V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT3906 Preliminary PNP EPITAXIAL SILICON TRANSISTOR DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  DESCRIPTION The UTC MMDT3906 is a Dual PNP small signal surface mount transistor. It’s suitable for low power amplification and switch.

Contextual Info: MMDT3906 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 200 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current I C = -200mA • In compliance with EU RoHS 2002/95/EC directives

MMDT3906VC

Abstract: MMDT3906VC-7 marking K
Contextual Info: MMDT3906VC NEW PRODUCT Lead-free Green DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction A Ideal for Low Power Amplification and Switching B2 C1 Ultra-Small Surface Mount Package E2 SOT-563 Lead Free By Design/RoHS Compliant Note 1

k3n transistor

Abstract: sot transistor k3n TRANSISTOR K3N
Contextual Info: MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · C2 · · · · · · · E2 E1 B2 C1 G H Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method

MMDT3906

Abstract: DS301-2
Contextual Info: PRELIMINARY MMDT3906 VISHAY /l i t e w ji DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR I POWER SEMICONDUCTOR/ Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SO T-363 R R e’

k3n transistor

Abstract: sot transistor k3n
Contextual Info: SPICE MODEL: MMDT3906 MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching SOT-363 A Ultra-Small Surface Mount Package C2 B1 E1 Available in Lead Free/RoHS Compliant Version Note 4

MMDT3906V

Abstract: MMDT3906V-7
Contextual Info: MMDT3906V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant Note 1 Qualified to AEC-Q101 Standards for High Reliability

MMDT3906

Contextual Info: MMDT3906 MMDT3906 Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ MAKING: K3N

k3n transistor

Abstract: K3n td sot transistor k3n J-STD-020A MMDT3906 MMDT3906-7 MMDT3906-7-F
Contextual Info: MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT3906 Features • · · · C2 · · · · · · · E2 E1 B2 C1 G H Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT3906 Preliminary PNP EPITAXIAL SILICON TRANSISTOR DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR „ DESCRIPTION The UTC MMDT3906 is a Dual PNP small signal surface mount transistor. It’s suitable for low power amplification and switch.

Contextual Info: MMDT3906V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant Note 1 Qualified to AEC-Q101 Standards for High Reliability

Contextual Info: MMDT3906 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Lead Free in RoHS 2002/95/EC Compliant

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT3906 SOT-363 DUAL TRANSISTOR PNP FEATURES •Epitaxial planar die construction ·Ideal for low power amplification and switching 1 MARKING:K3N MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)

Contextual Info: MMDT3906TB6 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR 200 mWatts 0.011 0.27 0.006(0.17) FEATURES SOT-563 • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -200mA • / 

MMDT3906V

Abstract: MMDT3906V-7 MMC1B2
Contextual Info: SPICE MODEL: MMDT3906V MMDT3906V Pb NEW PRODUCT Lead-free DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Epitaxial Planar Die Construction A Ideal for Low Power Amplification and Switching · · · E2 SOT-563 Lead Free By Design/RoHS Compliant Note 1