MMIC 576 Search Results

AN-S003

Abstract: 1 kilo ohm resistor specifications bonding capillary hp mmic MSA-0100 MSA-0200 MSA-0300 MSA-0500 MSA-0600 MSA-0700
Contextual Info: MODAMP Silicon MMIC Chip Use Application Note S009 Introduction This Application Note supplies information needed to layout and assemble circuits when using Hewlett-Packard’s MODAMP silicon MMIC amplifiers in chip form. Section I gives an overview of the

Contextual Info: ell Stanford Microdevices Product Description SLN-386 Stanford M icrodevices’ SLN-386 is a high perform ance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 85 mil (2.2mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth

Contextual Info: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the

Contextual Info: Preliminary Data Sheet FMS2002QFN 2.2 SP3T Reflective pHEMT MMIC Switch Description The FMS2002QFN is a linear high power Single-Pole Three-Throw MMIC Antenna Switch designed for use in Dual-band handsets GSM900 and GSM1800/1900 combinations. The switch is designed with one antenna port that can be routed to

Contextual Info: NJG1672LK4 SP9T ANTENNA SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1672LK4 is a GaAs SP9T antenna switch IC for GSM/TD-SCDMA multi-band handsets. The IC contains a MMIC switch die with on-chip logic circuits and a LTCC substrate with built-in three LPFs on GSM/TD-SCDMA transmit paths for

grx2

Abstract: NJG1672LK4 GSM1800 GSM1900 GSM900 HK1005
Contextual Info: NJG1672LK4 SP9T ANTENNA SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1672LK4 is a GaAs SP9T antenna switch IC for GSM/TD-SCDMA multi-band handsets. The IC contains a MMIC switch die with on-chip logic circuits and a LTCC substrate with built-in three LPFs on GSM/TD-SCDMA transmit paths for

UPC1677C

Abstract: UPC1677B
Contextual Info: 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES UPC1677B UPC1677C upci677c - NOISE FIGURE AND GAIN V » . FREQUENCY AND VOLTAGE • HIGH POWER OUTPUT:+19.5 dBm

SNA-576

Abstract: MMIC 576 110C 155C SNA-500 SNA-576-TR1 SNA-576-TR2 SNA-576-TR3
Contextual Info: Product Description SNA-576 Stanford Microdevices’ SNA-576 is a GaAs monolithic broadband amplifier housed in a low-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V. DC-3 GHz, Cascadable GaAs MMIC Amplifier

transistor C110

Abstract: C110 C165 MP0125 MP0500
Contextual Info: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com MIS CHIP CAPACITORS Tolerance = +/- 10 % on singles; Binary = +/- 20%. Metallization options: "B" = AuGe attach (backside) and AuSn topside for FET or MMIC Mounting (self bias)

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D ES C R IP TIO N The /¿PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.

TRANSISTOR BO 345

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.

MP0402

Abstract: MP0002 MP0010 MP0022 MP0033 C4 MMIC MP0004
Contextual Info: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com MIS CHIP CAPACITORS Tolerance = +/- 10 % on singles; Binary = +/- 20%. Metallization options: "A" = AuSn Attach and wire bondable pad "B" = AuGe attach (backside) and AuSn topside for FET or MMIC Mounting (self bias)

UPC1670C

Abstract: 574 nec UPC1670 UPC1668 UPC1668B UPC1668C UPC1669 UPC1669B UPC1669C UPC1670B
Contextual Info: NEC/ SbE D CALIFORNIA NEC • NECC 1,427414 0002b3fl Û37 UPC1668 SERIES UPC1669 SERIES UPC1670 SERIES HIGH ISOLATION SILICON MMIC IF AMPLIFIERS OUTLINE DIMENSIONS FEATURES • HIGH ISOLATION Units in mm OUTLINE B08 • LOW INPUT/OUTPUT RETURN LOSS 1.27±0.1

H580

Abstract: HMC580ST89E HMC580ST89
Contextual Info: HMC580ST89 / 580ST89E v00.1106 AMPLIFIERS - SMT 5 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz Typical Applications Features The HMC580ST89 / HMC580ST89E is an ideal RF/IF gain block & LO or PA driver: P1dB Output Power: +22 dBm • Cellular / PCS / 3G

5609 dec

Abstract: dec 5609 MLT 22 615 mlt 22 627 001-120 544 mmic ED-4701 FMM5125X
Contextual Info: FMM5125X 15/60GHz Frequency Multiplier MMIC FEATURES •Input/Output Frequency : 15 / 60 GHz •Wide Frequency Band : 57 - 64 GHz •Conversion Loss : Lc = 5dB Typ. @fout = 60 GHz, Pin = 10 dBm •High Output Power : Po = 5dBm (Typ.) @fout = 60 GHz, Pin = 10 dBm

MLT 22 615

Contextual Info: FMM5125X 15/60GHz Frequency Multiplier MMIC FEATURES •Input/Output Frequency : 15 / 60 GHz •Wide Frequency Band : 57 - 64 GHz •Conversion Loss : Lc = 5dB Typ. @fout = 60 GHz, Pin = 10 dBm •High Output Power : Po = 5dBm (Typ.) @fout = 60 GHz, Pin = 10 dBm

ESD 141

Abstract: FMS2022 B1142 capacitor 100pF 0603
Contextual Info: Preliminary Data Sheet FMS2022 2.1 DC–4 GHz MMIC SP4T Absorptive Switch Functional Schematic Features: OUT1 ¨ ¨ ¨ ¨ ¨ Available as known good die Broadband performance Low Insertion loss <1.4 dB at 4 GHz typical High isolation >28 dB at 4 GHz typical

transistor marking T79 ghz

Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority

FMS2022

Abstract: ESD 141 capacitor 100pF 0603
Contextual Info: FMS2022 Preliminary Data Sheet 2.2 DC–4 GHz MMIC SP4T Absorptive Switch Features: Functional Schematic OUT1 ♦ ♦ ♦ ♦ ♦ Available as known good die Broadband performance Low Insertion loss <1.4 dB at 4 GHz typical High isolation >28 dB at 4 GHz typical

Marking M2

Contextual Info: GaAs MMIC CMY 91 Data Sheet • GaAs mixer with integrated IF-amplifier for mobile communication • Frequency range 0.8 GHz to 2.5 GHz • Very low current consumption 1 mA typ. • Single positive supply voltage • Operating voltage range: 2.7 to 6 V

SKY65137

Abstract: S1770 s414 transistor S1383 S413 S414 s2063
Contextual Info: DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description • IEEE802.11a WLAN enabled:  access points  media gateways  set top boxes  LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,

S1243

Contextual Info: PRELIMINARY DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description x IEEE802.11a WLAN enabled:  access points  media gateways  set top boxes  LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,

circuits metal detector

Abstract: SKY65137 420 MMIC 802.11a Amplifier METAL DETECTOR circuit for make Microwave detector diodes 18 GHz S1383 S1770 S413 S414
Contextual Info: DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description • IEEE802.11a WLAN enabled:  access points  media gateways  set top boxes  LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,

Contextual Info: DP10T Antenna Switch for GSM/UMTS/LTE CXM3548XR Description The CXM3548XR is a DP10T antenna switch for GSM /UMTS/LTE multi-mode handsets. The CXM3548XR has a CMOS SPI interface decoder. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.