UPC1668 Search Results

UPC1670C

Abstract: pour UPC1669 UPC1670
Contextual Info: NEC HIGH ISOLATION SILICON MMIC IF AMPLIFIERS FEATURES OUTLINE DIMENSIONS • HIGH ISOLATION UPC1668 SERIES UPC1669 SERIES UPC1670 SERIES Units in mm OUTLINE B08 1.2 7 ± 0.1 • LOW INPUT/OUTPUT RETURN LOSS 1. 27 ± 0.1 • LOW IMD DESCRIPTION AND APPLICATIONS

C1668C

Abstract: Video Isolation Amplifier UPC1668C C1668 Isolation Amplifier NEC JAPAN
Contextual Info: HIGH ISOLATION SILICON MMIC IF AMPLIFIER UPC1668C UPC1668C ISOLATION AND GAIN vs. FREQUENCY FEATURES • HIGH ISOLATION 30 • LOW INPUT/OUTPUT RETURN LOSS VCC = 12V VCC = 10 V VCC = 8 V • LOW INTERMODULATION DISTORTION GAIN ISO -40 10 DESCRIPTION Isolation, (dB)

C1668C

Contextual Info: UPC1668B UPC1668C UPC1668P HIGH ISOLATION SILICON MMIC IF AMPLIFIER UPC1668C ISOLATION AND GAIN vs. FREQUENCY FEATURES HIGH ISOLATION LOW INPUT/OUTPUT RETURN LOSS LOW INTERMODULATION DISTORTION ill TJ DESCRIPTION The UPC1668 is a bipolar analog integrated circuit which

UPC1670C

Abstract: 574 nec UPC1670 UPC1668 UPC1668B UPC1668C UPC1669 UPC1669B UPC1669C UPC1670B
Contextual Info: NEC/ SbE D CALIFORNIA NEC • NECC 1,427414 0002b3fl Û37 UPC1668 SERIES UPC1669 SERIES UPC1670 SERIES HIGH ISOLATION SILICON MMIC IF AMPLIFIERS OUTLINE DIMENSIONS FEATURES • HIGH ISOLATION Units in mm OUTLINE B08 • LOW INPUT/OUTPUT RETURN LOSS 1.27±0.1

SCHEMATIC circuit high frequency POWER SUPPLY

Contextual Info: HIGH ISOLATION SILICON MMIC IF AMPLIFIER UPC1668C UPC1668C ISOLATION AND GAIN vs. FREQUENCY FEATURES HIGH ISOLATION LOW INPUT/OUTPUT RETURN LOSS LOW INTERMODULATION DISTORTION ST CD TJ T3 3 Ç *co O DESCRIPTION The UPC1668C is a bipolar analog integrated circuit which

Contextual Info: HIGH ISOLATION SILICON MMIC IF AMPLIFIER UPC1668C ISOLATION AND GAIN v*. FREQUENCY FEATURES_ • HIGH ISOLATION • LOW INPUT/OUTPUT RETURN LOSS • LOW INTERMODULATION DISTORTION m *o 3 I DESCRIPTION_ The UPC1668C is a bipolar analog integrated circuit which

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18