MMIC H2 Search Results

Philips DC Power Amplifier 380

Abstract: BGA2051 hotel BP317
Contextual Info: DISCRETE SEMICONDUCTORS BGA2051 MMIC power amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 13 Philips Semiconductors Objective specification MMIC power amplifier BGA2051 FEATURES PINNING NO395 • Single 3.6 V supply voltage

BGA2450

Abstract: BP317 ISM2400
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BGA2450 MMIC power amplifier Objective specification 2000 July 14 Philips Semiconductors Objective specification MMIC power amplifier BGA2450 PINNING FEATURES • Low-voltage operation 3 V PIN • High power-added efficiency (35 %)

TC950

Abstract: 1gg6 8054 1GG6-8054 GaAs MMIC ESD, Die Attach and Bonding Guidelines 0747 ics
Contextual Info: Agilent 1GG6-8054 DC–75 GHz SPDT GaAs MMIC Switch TC950 Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The TC950 is a GaAs monolithic microwave integrated circuit MMIC switch designed for low insertion loss and high isolation

AMMC-5026-W10

Abstract: AMMC-5026 AMMC-5026-W50 Traveling Wave Amplifier
Contextual Info: Products > RF for Mobile, WLAN, mmW > mmW & microWave Devices > Amplifiers > AMMC-5026 AMMC-5026 2 - 35 GHz GaAs MMIC Traveling Wave Amplifier Description AMMC-5026 is a broadband PHEMT GaAs MMIC Traveling Wave Amplifier designed for medium output power and high gain over the full 2GHz to 35 GHz

VQFN24

Abstract: CGB91 VQFN-24 Marking code CGB tdma circuit diagram VC-37 MMIC marking CODE 73
Contextual Info: GaAs MMIC CGB91 Target Datasheet • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit

VQFN24

Abstract: rf channel trap circuit CGB191 marking gain stage GaAs MMIC AMPLIFIER VQFN-24
Contextual Info: GaAs MMIC CGB191 Target Datasheet • HBT power amplifier for 1900 MHz CDMA, TDMA and WCDMA portable cellular phones • Integrated temperature compensated bias circuit

29dBm

Abstract: CGB191 Q62702-G0131 VQFN24 rf channel trap circuit
Contextual Info: GaAs MMIC CGB191 Target Datasheet • • • • • ESD: HBT power amplifier for 1900 MHz CDMA, TDMA portable cellular phones Integrated temperature compensated bias circuit

c4 09 smd marking code

Contextual Info: GaAs MMIC CGB 240 Datasheet ?2 stages Bluetooth InGaP HBT-Power Amplifier ?Single Voltage Supply ?Operating voltage range: 2.0 to 6 V ?Pout = 23dBm at Vd=3.2V

murata COG capacitor

Abstract: INFINEON PART MARKING MIRA TECHNOLOGY CGB240 Q62702-G0174 TSSOP10 infineon marking code L2
Contextual Info: GaAs MMIC CGB 240 Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V

murata x7r capacitor

Abstract: murata COG capacitor TSSOP-10 marking H2 5-pin CGB240 Q62702-G0174 TSSOP10 MMIC marking CODE c4 Marking code CGB SMD MARKING code mmic
Contextual Info: GaAs MMIC CGB 240 Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V

murata COG capacitor

Abstract: INFINEON PART MARKING CGB240 Q62702-G0174 TSSOP10 TRL1 INFINEON package PART MARKING
Contextual Info: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V

hittite j

Abstract: Hydrogen GaAs 0.15 pHEMT mmic j PHILADELPHIA
Contextual Info: v00.0105 APPLICATION NOTES HYDROGEN EFFECTS ON GaAs pHEMT DEVICES Introduction: The effects of residual Hydrogen H2 on GaAs pHEMT devices in hermetically sealed packages are well documented by the GaAs MMIC community. This application note is intended to serve as an overview of this

CGY2030M

Abstract: SSOP16 SSOP20 TL 188 TRANSISTOR PNP
Contextual Info: Philips Semiconductors Preliminary specification DECT 500 mW power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 40% The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically

schematic diagram power amplifier free

Abstract: class g power amplifier schematic philips dect
Contextual Info: Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 40% The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically

215LP4E

Contextual Info: HMC215LP4 / 215LP4E v01.0111 Mixers - SINGLE & DOUBLE BALANCED - SMT 10 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 4.0 GHz Typical Applications Features The HMC215LP4 / HMC215LP4E is ideal for Wireless Infrastructure Applications: Input IP3: +25 dBm

Contextual Info: HMC215LP4 / 215LP4E v01.0111 Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 4.0 GHz Typical Applications Features The HMC215LP4 / HMC215LP4e is ideal for Wireless infrastructure Applications: input iP3: +25 dBm

Contextual Info: OBSOLETE PRODUCT HMC210MS8 / 210MS8E v02.0705 ATTENUATORS - ANALOG - SMT GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 1.5 - 2.3 GHz Typical Applications Features The HMC210MS8 / HMC210MS8E is ideal for: Single Positive Voltage Control: 0 to +2.5V • Base Station Infrastructure

gsm signal amplifier circuit diagram

Abstract: MGD629
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier

H215

Abstract: HMC215LP4 HMC215LP4E HMC552LP4
Contextual Info: HMC215LP4 / 215LP4E v00.0906 MIXERS - SMT 8 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 4.0 GHz Typical Applications Features The HMC215LP4 / HMC215LP4E is ideal for Wireless Infrastructure Applications: Input IP3: +25 dBm • PCS / 3G Infrastructure

Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC7149 v01.1113 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz AMPLIFIERS - LINEAR & POWER - CHIP

Contextual Info: OBSOLETE PRODUCT HMC218MS8 / 218MS8E v04.0906 MIXERS - SINGLE & DOUBLE-BALANCED - SMT GaAs MMIC SMT DOUBLE-BALANCED MIXER, 4.5 - 6 GHz Typical Applications Features The HMC218MS8 / HMC218MS8E is ideal for: Passive Double-Balanced Topology • Basestations, Repeaters & Access Points

H213

Abstract: H213 mixer HMC213MS8 19RF19 H2-13 planar transformer pcb HMC213MS8E lo44 LO-18
Contextual Info: HMC213MS8 / 213MS8E v002.0505 MIXERS - SMT 7 GaAs MMIC SMT DOUBLEBALANCED MIXER, 1.5 - 4.5 GHz Typical Applications Features The HMC213MS8 / HMC213MS8E is ideal for: Ultra Small Package: MSOP8 • Base Stations Conversion Loss: 8.5 dB • PCMCIA Transceivers

Contextual Info: HMC270MS8G / 270MS8GE v04.0607 GaAs MMIC SPDT SWITCH NON-REFLECTIVE, DC - 8 GHz Typical Applications Features The HMC270MS8G / HMC270MS8GE is ideal for DC - 8.0 GHz applications: Broadband Performance: DC - 8 GHz • CATV Non-Relective Design • MMDS & WirelessLAN

HMC277MS8

Abstract: 277MS8E HMC272MS8 microwave passive repeaters
Contextual Info: HMC277MS8 / 277MS8E v00.0906 MIXERS - SMT 8 GaAs MMIC SMT SINGLE BALANCED MIXER, 0.7 - 1.2 GHz Typical Applications Features The HMC277MS8 / HMC277MS8E is ideal for: Passive Topology • Cellular / 3G Infrastructure LO / RF Isolation: 26 dB • Basestations & Repeaters