MMPQ3467 Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Mem ory Driver Transistor MMPQ3467 PNP Silicon Motorola Preferred Device 1 CASE 751B-05, STYLE 4 SO-16 MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO —40 Vdc VCB ^10 Vdc veb 5.0 Vdc 'C 1.0

SO16 footprint

Contextual Info: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCEO −40 Vdc Collector −Base Voltage VCB −40 Vdc Emitter −Base Voltage VEB

MMPQ3467

Contextual Info: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCB –40 Vdc Emitter–Base Voltage VEB –5.0

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MMPQ3467 PNP Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value Unit VCEO –40 Vdc Collector – Base Voltage

Contextual Info: MMPQ3467 Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)1.0 P(D) Max. (W)1.2 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCB –40 Vdc Emitter–Base Voltage VEB –5.0

1N916

Abstract: MMPQ3467 SOIC-16 TN3467A
Contextual Info: TN3467A MMPQ3467 E C B E B E E B TO-226 B E C SOIC-16 B C C C C C C C PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMPQ3467

Contextual Info: MOTOROLA Order this document by MMPQ3467/D SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MMPQ3467 PNP Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value

Contextual Info: S 3 S S M iC ^ N D U C T Q S ?,s TN3467A MMPQ3467 SOIC-16 PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings TA = 25°C unless otherwise noted

MMPQ3467

Contextual Info: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCB –40 Vdc Emitter–Base Voltage VEB –5.0

Contextual Info: S e M lO O N O iJQ T C W » TN3467A MMPQ3467 SOIC-16 PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5 ° C u n le s s o th e r w is e n o te d

MMPQ3467

Abstract: SOIC-16 TN3467A
Contextual Info: S e m i c o n d u c t o r ' TN3467A MMPQ3467 TN3467AI MMPQ3467 & D iscrete P O W E R & S ig n a l Technologies National SOIC-16 PNP Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d s a tu rated sw itching app lication s at currents to 8 0 0 m A . S o u rc e d fro m P ro c ess 7 0 .

MMPQ3467

Contextual Info: MMPQ3467 Quad Memory Driver Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCB −40 Vdc Emitter −Base Voltage VEB −5.0 Vdc IC −1.0 Adc Collector Current — Continuous

Contextual Info: MMPQ3467 Quad Memory Driver Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCB −40 Vdc Emitter −Base Voltage VEB −5.0 Vdc IC −1.0 Adc Collector Current — Continuous

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MMPQ3467 PNP Silicon dJ V i Z 1 E B a EI M I a H i II 3 Q ü E 3 Motorola Preferred Device irvz 1 CASE 751B -05, STYLE 4 SO -16 MAXIMUM RATINGS Rating Symbol Value VCEO -4 0 Vdc C ollector-B ase Voltage

751B-03

Contextual Info: MMPQ3467* CASE 751B-03, STYLE 1 SO -16 M AXIM UM RATINGS Value Unit VCEO -4 0 Vdc Collector-Base Voltage VCB -4 0 Vdc Em itter-Base Voltage V eb -5 0 Vdc 'c - 1 .0 Ade Rating Sym bol Collector-Em itter Voltage Collector Current — Continuous Each Transistor

MMPQ3467

Abstract: SO16 footprint
Contextual Info: MOTOROLA Order this document by MMPQ3467/D SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MMPQ3467 PNP Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 MAXIMUM RATINGS 1 Rating Symbol Value Unit VCEO –40 Vdc Collector – Base Voltage

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

Contextual Info: M u ltip le B ip o la r T ra n s is to rs — Q u a d .% Davtee Type <v> Mtn MMPQ6502 BOTH 30 V CE SAT % Cob PF M fr ' mA MHz Min Max 0 .5 100 150 200 8 0 .4 10 150 CD7 S O IC -1 6 150 200 8 0 .4 10 150 CD3 T O -1 1 6 m volts d lc /lB & lc Max Configuralion

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.