MNOS MEMORY Search Results

NCR Microelectronics Division

Contextual Info: L Ü ^ Ü J 2051 512-BIT WAROM MEMORY NCR CORPORATION MICROELECTRONICS DIVISION 8181 BYERS ROAD MIAMISBURG, OHIO 45342 _ . ¿ I 513 866-7471 TLX 28-8010 NCRMICRO, MSBG I ~L\ Electrically alterable ROM MNOS P-channel technology STANDARD 28 PIN SIDE BRAZE DIP

Contextual Info: 128Kx 32 EEPROM MODULE molaic PUMA 3E4000X-12/15/20 Issue 1.1 : Septemberl 993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r inc. -v Pin Definition 4,194,304 bit MNOS High Speed EEPROM Features

MICROELECTRONICS 2451 warom memory

Abstract: xs100ns ncr 400
Contextual Info: PRELIMINARY 4096-BIT WAROM MEMORY NCR CORPORATION C>2-\5m (513) 866-7471 TLX 28-8010 NCRMICRO, MSBG MICROELECTRONICS DIVISION, 8181 BYERS ROAD, MIAMISBURG, OHIO 45342 Electrically alterable ROM MNOS P-channel technology STANDARD 22 PIN SIDE BRAZE DIP

MICROELECTRONICS 2451 warom memory

Abstract: NCR2451 ncr 400
Contextual Info: NCR P R E LIM IN A R Y 4096-BIT WAROM MEMORY N CR CORPORATION (513) 866-7471 TLX 28-8010 NCRMICRO, MSBG MICROELECTRONICS DIVISION, 8181 BYERS ROAD, MIAMISBURG, OHIO 45342 Electrically alterable ROM MNOS P-channel technology STANDARD 22 PIN SIDE BRAZE DIP

earom

Abstract: 7400 TTL TTL CI 7400 ncr 400
Contextual Info: d C R 2401 4096-BIT EAROM MEMORY NCR CORPORATION MICROELECTRONICS DIVISION 8181 BYERS ROAD MIAMISBURG, OHIO 45342 | 513 866-7471 TLX 28-8010 NCRMICRO, MSBG Electrically alterable ROM MNOS P-channel technology 1024 X 4 Organization 10-Bit Binary Addressing

Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit HITACHI ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÔs organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.

692B

Abstract: HN58S256A HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA00358
Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

Hitachi DSA00171

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

Contextual Info: PRELIMINARY DATA N C R 512-BIT WAROM MEMORY NCR CORPORATION MICROELECTRONICS DIVISION 8181 BYERS ROAD M IAM ISBURG, OHIO 4534? I 513 866-7471 TLX 28-8010 NCRMICRO. MSBG Electrically alterable ROM MNOS P-channel technology STANDARD 22 PIN SIDE BRAZE DIP

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word x 8-bit employing advanced MNOS memory technology and CMOS process

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

Hitachi DSA002713

Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÕs organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.

gate drive protetion with transistor

Abstract: HN58V256A HN58V256AFP-12 HN58V256AT-12 HN58V257A HN58V257AT-12
Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit. Employing advanced MNOS memory technology and CMOS

gate drive protetion with transistor

Abstract: HN58C256A HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85
Contextual Info: HN58C256A Series HN58C257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-410 A Z Rev. 1.0 May. 17, 1996 Description The Hitachi HN58C256A and HN58C257A are a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit. Employing advanced MNOS memory technology and CMOS

Renesas mnos

Abstract: TBL Series HN58S256A HN58S256AT HN58S256AT-15 HN58S256AT-15E HN58S256AT-20 HN58S256AT-20E
Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit REJ03C0150-0300Z (Previous ADE-203-692B (Z) Rev.2.0) Rev. 3.00 Feb.26.2004 Description The HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has

HN58S256A

Abstract: HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA0047
Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-692A Z Rev. 1.0 Sep. 9, 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also

PRSP0008DG-B

Abstract: REJ03C0138-0300 HN58W241000FPI HN58W241000FPIE HN58W241000I
Contextual Info: HN58W241000I Two-wire serial interface 1M EEPROM 128-kword x 8-bit REJ03C0138-0300 Rev.3.00 Jul.12.2005 Description HN58W241000I is the two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology

Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word X 8-bit. Employing advanced MNOS memory technology and CMOS

amp 2051 n

Abstract: NCR Microelectronics Division
Contextual Info: 2051 512-BIT WAROM MEMORY NCR CORPORATION MICROELECTRONICS DIVISION 8181 BYERS ROAD M IAM ISBURG, OHIO 45342 _ - I 513 866-7471 TLX 28-8010 NCRMICRO, MSBG I _ Electrically alterable ROM MNOS P-channel technology S T A N D A R D 28 P IN S ID E B R A ZE D IP

HN58C256A

Abstract: HN58C256P-20 HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 RP 1240 M
Contextual Info: HN58C256A, HN58C257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-410 Z Preliminary Rev. 0.0 Jun. 19, 1995 Description The Hitachi HN58C256A and HN58C257A are a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit. Employing advanced MNOS memory technology and CMOS process

HN58V256A

Abstract: HN58V256AFP-12 HN58V256AT-12 HN58V257A HN58V257AT-12 Hitachi DSA00777
Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit. Employing advanced MNOS memory technology and CMOS

Contextual Info: HN58S65A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-691 Z Preliminary Rev. 0.0 Dec. 5, 1996 Description The Hitachi HN58S65A series is a electrically erasable and programmable EEPROM’s organized as 8192word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

Contextual Info: HN58C256A Series HN58C257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-410 A Z Rev. 1.0 May. 17, 1996 Description The Hitachi HN58C256A and HN58C257A are a electrically erasable and programmable EEPROM’s organized as 32768-word x 8-bit. Employing advanced MNOS memory technology and CMOS process and

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry