MODEL 430 Search Results

dc dc transformer design

Abstract: 430 transformer
Contextual Info: Model 430 Isolation Transformer The Model 430 is a high-power, broad-band version of isolation transformer within ERI’s full line of isolation transformers.The Model 430 was developed for use across the entire commercial FM frequency band.The transformer’s

CLF10040

Abstract: CLF10040T CLF10040T-150M CLF100 CLF10040T-3R3N CLF10040T-4R7N 0071 CLF10040T-220M
Contextual Info: TDK Equivalent Circuit Model Library Dec. 16, 2009 Model Type: Simple Model Inductors / CLF10040 Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] CLF10040T-1R5N 1.5 3300 1.259 0.0071 CLF10040T-2R2N 2.2 4300 2.854 0.0097 CLF10040T-3R3N

red LED

Contextual Info: Model 430 Light Emitting Diode Model 430 Ultra Large LED Indicator Light is similar in appearance to the Model 407 It is constructed of chrome plated brass with the LED installed in a manner such that the lens of the LED forms a macrodome lens for the Indicator Light.

Contextual Info: Engineering Development Model Voltage Controlled Oscillator JTOS-EDR4003 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

LT1450ED

Abstract: GL6P201 GL7P210 GL5HY8 LT5013 LT9040E GL3CL8 GL107R12 LT9325E GL8P040
Contextual Info: Model No. List Model No. List • Blue LEO Lamps Model No. GL3BX44 ■ ¿3 m m T - l LED Lamps P ag e 40 Model No. Pag e ■ ¿5m m (T - l 3/4) LED Lamps Model No. Page GL3HD43 55 GL5LR41 85 GL5BX43 42 GL3HS43 55 GL5PR41 85 GL5BX44 44 GL3HY43 55 GL5HD41

Contextual Info: Engineering Development Model Voltage Controlled Oscillator ROS-ED12612/1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: Engineering Development Model High Pass Filter SAHF-EDU0621 Surface Mount Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: Engineering Development Model Voltage Controlled Oscillator ROS-ED9695/1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: Engineering Development Model Voltage Controlled Oscillator ROS-ED9695/1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

4610x-m22-000lf

Abstract: 4607X-P38-000 4612X-101-472LF 4614X-104-331/471 4609M-CP3-000LF 4604X-T98 4610H-L96-00CLF led cross reference 4610H-T15-000 4614X-R2R-502
Contextual Info: RESISTOR NETWORKS Model 4300 vs. Model 4600 Riverside, California - May 18, 2010 - At present, the lead time for the Model 4600 conformal single in line SIP resistor network series has been extended to over 40 weeks. The 4300 molded SIP resistor network series from Bourns is a valid alternative to the 4600 conformal coated

Contextual Info: Engineering Development Model Power Splitter/Combiner SCPJ-ED7311/2 2 Way-0° Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: Engineering Development Model Power Splitter/Combiner SCP-ED10471/1 3 Way-0° Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: Engineering Development Model Frequency Mixer HJK-ED104284/1 Level 15 LO Power + 15 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Si7625DN

Abstract: mosfet 4430 si7625 S10-2503
Contextual Info: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

0745

Contextual Info: SPICE Device Model SiR834DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

gas chromatograph

Abstract: PGC-2000 791A001B pressure reducing valve air pgc2000 abb PGC2000 vaporizer ABB K series Filled PTFE 791A006B
Contextual Info: Process Gas Chromatograph Process Gas Chromatographs Model 791 Liquid Sample Valve Ordering Information Liquid Sample Valve - Model 791 Valves - Specifications INTRODUCTION The design of the Model 791 Liquid Sample Valve incorporates the fundamentals associated with on-line process analyzers, maximum

1008HT-7N2

Abstract: 1008HT
Contextual Info: Document 158 SPICE Model – 1008HT This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is

MMZ2012Y202B

Abstract: MMZ2012S121A MMZ2012R150A MMZ2012R102A MMZ2012R301A MMZ2012S601A MMZ2012 mmz2012y601b MMZ2012S102A MMZ2012Y202B by tdk
Contextual Info: TDK Equivalent Circuit Model Library Dec. 03, 2007 Model Type: Simple Model Ferrite Beads / MMZ2012 Series Circuit Diagram Circuit Parameters Part No. R1[ohm] L1[uH] C1[pF] R2[ohm] MMZ2012R150A 19 0.13 0.9 MMZ2012R300A 36 0.25 0.9 0.006 0.01 MMZ2012R600A 58

VLS4012

Abstract: VLS4012T VLS4012T-100MR82 VLS4012T-150MR65 VLS4012T-1R0N1R6 VLS4012T-1R5N1R5 VLS4012T-220MR57 VLS4012T-2R2M1R4 VLS4012T-330MR44 VLS4012T-3R3M1R2
Contextual Info: TDK Equivalent Circuit Model Library Dec. 16, 2009 Model Type: Simple Model Inductors / VLS4012 Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] VLS4012T-1R0N1R6 1 1900 1.265 0.0500 VLS4012T-1R5N1R5 1.5 3000 1.478 0.0600 VLS4012T-2R2M1R4

Contextual Info: SPICE Device Model Si7625DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SPICE

Abstract: models
Contextual Info: SPICE MODELS SPICE Model – xx413RAF This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is

vlc5045

Abstract: VLC5045T-4R7M VLC5045T VLC5045T-220M VLC5045T-3R3N VLC5045T-6R8M VLC5045T-150M VLC5045T-2R2N VLC5045T-100M VLC5045T-1R5N
Contextual Info: TDK Equivalent Circuit Model Library Dec. 16, 2009 Model Type: Simple Model Inductors / VLC5045 Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] VLC5045T-1R5N 1.5 2900 3.788 0.0140 VLC5045T-2R2N 2.2 3200 4.131 0.0170 VLC5045T-3R3N

SLF7045-H

Abstract: slf7045 SLF7045T-470MR90-H SLF7032T-150M1R1 SLF7045T-4R7M2R1-H SLF7045T-680MR75-H 93471 SLF7055T SLF7045T-101MR50 TDK SLF7045T
Contextual Info: TDK Equivalent Circuit Model Library Jan. 13, 2009 Model Type: Simple Model Inductors / SLF7028 Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] SLF7028T-3R3M1R6-PF 3.3 5943.9 1.1023 SLF7028T-4R7M1R5-PF 4.7 7664.2 1.3450 0.037

Contextual Info: SPICE Device Model SiA483DJ www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C