SPICE Search Results

Contextual Info: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

15514

Contextual Info: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

sir882a

Contextual Info: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

S12-1319

Contextual Info: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

flyback

Abstract: Average simulations of FLYBACK converters with SPICE3 UC3845 pspice model SEM-800 dixon flyback smps uc3845 UC3845 spice model SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG voltage controlled pwm generator 0 to 100 pspice model uc3845 isolated smps Spice model xfmr
Contextual Info: Average simulations of FLYBACK converters with SPICE3 Christophe BASSO May 1996 Within the wide family of Switch Mode Power Supplies SMPS , the Flyback converter represents the preferred structure for use in small and medium power applications such as wall

Si7625DN

Abstract: mosfet 4430 si7625 S10-2503
Contextual Info: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiZ730DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si2366

Contextual Info: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: SPICE Device Model SiZ790DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: MAX3785 Output Model 6.25Gbps 1.8V Board Equalizer SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic

NET0260

Abstract: 3845 n equivalent VALUE IC net219 LTspice eldo TSH300
Contextual Info: Development of the Analog Macromodel for TSH300, ultra low-noise high-speed operational amplifier Angelo Marotta angelo.marotta@st.com STMicroelectronics May 2011 Abstract An unified analog macromodel, for Spice-like simulators, was implemented for TSH300 operational amplifier matching the real DC, Transient and AC behavior

Contextual Info: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

14093

Abstract: 75431
Contextual Info: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

s1124

Contextual Info: SPICE Device Model Si5999EDU www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SPICE Device Model SiS698DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

62630

Contextual Info: SPICE Device Model SiA920DJ www.vishay.com Vishay Siliconix Dual N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SIR876

Contextual Info: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

C3028LD

Abstract: DMC3028 DMC3028LSD-13 DMC3028LSD
Contextual Info: A Product Line of Diodes Incorporated DMC3028LSD 30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Device Features and Benefits Q1 ID RDS on V(BR)DSS TA = 25°C 28mΩ @ VGS= 10V 7.1A

DS31604

Abstract: DSS20200L
Contextual Info: DSS20200L LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Ideal for Medium Power Amplification and Switching Ultra Low Collector-Emitter Saturation Voltage

DS31638

Abstract: DS3163 2DD2656-7
Contextual Info: 2DD2656 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage

marking code k1

Abstract: DMN3052L
Contextual Info: DMN3052L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 32mΩ @ VGS = 10V RDS(ON) < 42mΩ @ VGS = 4.5V