Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiR770DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si3453DV
11-Mar-11
|
15514
Abstract: No abstract text available
Text: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
SiB410DK
AN609,
8029u
6830m
5384m
0019m
0110u
9058u
5505u
15514
|
sir882a
Abstract: No abstract text available
Text: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiR882ADP
11-Mar-11
sir882a
|
S12-1319
Abstract: No abstract text available
Text: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si7820DN
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S12-1319
|
flyback
Abstract: Average simulations of FLYBACK converters with SPICE3 UC3845 pspice model SEM-800 dixon flyback smps uc3845 UC3845 spice model SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG voltage controlled pwm generator 0 to 100 pspice model uc3845 isolated smps Spice model xfmr
Text: Average simulations of FLYBACK converters with SPICE3 Christophe BASSO May 1996 Within the wide family of Switch Mode Power Supplies SMPS , the Flyback converter represents the preferred structure for use in small and medium power applications such as wall
|
Original
|
PDF
|
|
Si7625DN
Abstract: mosfet 4430 si7625 S10-2503
Text: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si7625DN
S10-2503-Rev.
01-Nov-10
mosfet 4430
si7625
S10-2503
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ730DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiZ730DT
11-Mar-11
|
si2366
Abstract: No abstract text available
Text: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
Si2366DS
AN609,
J2523
4374u
1469m
9180m
0805u
5327u
7530m
0215u
si2366
|
Untitled
Abstract: No abstract text available
Text: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
IRFD014
SiHFD014
AN609,
CONFIGURA5-Oct-10
3009m
0416u
6348m
9120m
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ790DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiZ790DT
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: MAX3785 Output Model 6.25Gbps 1.8V Board Equalizer SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic
|
Original
|
PDF
|
MAX3785
25Gbps
worst-c28
REPORTERL1N29
REPORTERL1N30
920E-018
DE0900A
DE0396
REPORTERL1N27
REPORTERL1N28
|
NET0260
Abstract: 3845 n equivalent VALUE IC net219 LTspice eldo TSH300
Text: Development of the Analog Macromodel for TSH300, ultra low-noise high-speed operational amplifier Angelo Marotta angelo.marotta@st.com STMicroelectronics May 2011 Abstract An unified analog macromodel, for Spice-like simulators, was implemented for TSH300 operational amplifier matching the real DC, Transient and AC behavior
|
Original
|
PDF
|
TSH300,
TSH300
NET0260
3845 n equivalent VALUE IC
net219
LTspice
eldo
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si1012CR
11-Mar-11
|
|
|
Untitled
Abstract: No abstract text available
Text: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
IRFZ48R
SiHFZ48R
AN609,
6055m
9011m
2958m
1718m
3035m
|
14093
Abstract: 75431
Text: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
Si9945BDY
AN609,
3203u
3659m
8029m
3567u
2443m
3998m
0795m
14093
75431
|
s1124
Abstract: No abstract text available
Text: SPICE Device Model Si5999EDU www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the
|
Original
|
PDF
|
Si5999EDU
11-Mar-11
s1124
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS698DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiS698DN
11-Mar-11
|
62630
Abstract: No abstract text available
Text: SPICE Device Model SiA920DJ www.vishay.com Vishay Siliconix Dual N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiA920DJ
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
62630
|
SIR876
Abstract: No abstract text available
Text: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiR876ADP
11-Mar-11
SIR876
|
C3028LD
Abstract: DMC3028 DMC3028LSD-13 DMC3028LSD
Text: A Product Line of Diodes Incorporated DMC3028LSD 30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Device Features and Benefits Q1 ID RDS on V(BR)DSS TA = 25°C 28mΩ @ VGS= 10V 7.1A
|
Original
|
PDF
|
DMC3028LSD
J-STD-020D
621-DMC3028LSD-13
DMC3028LSD-13
C3028LD
DMC3028
DMC3028LSD-13
DMC3028LSD
|
DS31604
Abstract: DSS20200L
Text: DSS20200L LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Ideal for Medium Power Amplification and Switching Ultra Low Collector-Emitter Saturation Voltage
|
Original
|
PDF
|
DSS20200L
DSS20201L)
OT-23
J-STD-020D
MIL-STD-202,
DS31604
621-DSS20200L-7
DSS20200L-7
DSS20200L
|
DS31638
Abstract: DS3163 2DD2656-7
Text: 2DD2656 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage
|
Original
|
PDF
|
2DD2656
2DB1694)
OT-323
J-STD-020D
MIL-STD-202,
DS31638
621-2DD2656-7
2DD2656-7
DS3163
2DD2656-7
|
marking code k1
Abstract: DMN3052L
Text: DMN3052L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 32mΩ @ VGS = 10V RDS(ON) < 42mΩ @ VGS = 4.5V
|
Original
|
PDF
|
DMN3052L
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
DS31406
621-DMN3052L-7
DMN3052L-7
marking code k1
DMN3052L
|
