MODEL 802 Search Results

nokia 1110 lcd

Abstract: nokia 1110 1110 nokia NOKIA ULTRA
Contextual Info: - This Document can not be used without Samsung's authorization - 11. References 1 Model Numbering 1) CTO Numbering Rules Model Numbering - New Import Model (DT/NP) ◆ Model Code Structure 1 2 3 Product GroupCode 4 5 6 Product Name Deli mit Product Cha er Model

BOURNS 3590S

Abstract: H-46-6M 26.6M 3541h S9019 H-46-6A 69108 H-22 H-22-3A H-22-6A
Contextual Info: Dials & Precision Potentiometers P E R F E C T O U P L E S Model H-22 Model 3590 Model H-46 Model 3540 Introducing Two New Turns-Counting Dials Full Metal Precision-Counting Dial FEATURES • ■ ■ ■ ■ Model H-46 Part Number H-46-6A H-46-6M Accepts Shaft

4 pin 1123

Contextual Info: Engineering Development Model RF Transformer TC1-ED7714/5 Impedance Ratio : 1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: V1SHAY Numerical Index Vishay Spectrol MODEL NUMBER. PAGE NO MODEL NUMBER. PAGE NO 3 H . 10 159. 62

64895

Contextual Info: SPICE Device Model SiR404DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

4946

Abstract: 6r8j NL453232T-821J-PF rohs 331J TDK NL453232T-150J-PF NL453232T NL453232T-101J-PF NL453232T-102j NL453232T-270J-PF NL453232T-4R7J
Contextual Info: TDK Equivalent Circuit Model Library Jan. 13, 2009 Model Type: Simple Model Inductors / NL4532 Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] NL453232T-1R0J-PF 1 3550.7 0.3888 0.2669 NL453232T-1R2J-PF 1.2 4207.8 0.3844 0.2945

Contextual Info: SPICE Device Model SiS890DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si4172DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR472DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR404DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

AN1339

Abstract: PIC32 PICC-18 point coordination COLLISION AVOIDANCE
Contextual Info: AN1339 The Effect of Adding Radios on 802.11g Network Throughput Author: Setting up the Model Mark Wright and Sidharth Thakur Microchip Technology Inc. The model starts with a control station on an 802.11b/g network. The control case has only the control station

1000BASE

Abstract: 1000BASE-LX 1000BASE-SX PI90SD1636C PI90SD1636CFC VSC7123
Contextual Info: PI90SD1636C SERDES Gigabit Ethernet Transceiver Features Description • IEEE 802.3z Gigabit Ethernet Compliant • Supports 1.25 Gbps Using NRZ Coding over uncompensated twin coax cable • Fully integrated CMOS IC • Low Power Consumption • ESD rating >2000V Human Body Model or > 200V (Machine Model)

PI90SD1636AFDE

Abstract: 1000base SX receiver agilent HDMP1636A ethernet serial converter IC TX-2 RX-2 -G s RX-3 1000BASE 1000BASE-LX 1000BASE-SX
Contextual Info: PI90SD1636A SERDES Gigabit Ethernet Transceiver Features Description • IEEE 802.3z Gigabit Ethernet Compliant • Supports 1.25 Gbps Using NRZ Coding over uncompensated twin coax cable • Fully integrated CMOS IC • Low Power Consumption • ESD rating >2000V Human Body Model or > 200V (Machine Model)

Contextual Info: PI90SD1636C SERDES Gigabit Ethernet Transceiver Features Description • IEEE 802.3z Gigabit Ethernet Compliant • Supports 1.25 Gbps Using NRZ Coding over uncompensated twin coax cable • Fully integrated CMOS IC • Low Power Consumption • ESD rating >2000V Human Body Model or > 200V (Machine Model)

sir472

Abstract: sir472dp vishay 138
Contextual Info: SPICE Device Model SiR472DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si7862DP

Contextual Info: SPICE Device Model Si7862DP Vishay Siliconix N-Channel 16-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4862DY

Contextual Info: SPICE Device Model Si4862DY Vishay Siliconix N-Channel 16-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74170

Abstract: Si7216DN
Contextual Info: SPICE Device Model Si7216DN Vishay Siliconix Dual N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: PI90SD1636C SERDES Gigabit Ethernet Transceiver Features Description • IEEE 802.3z Gigabit Ethernet Compliant • Supports 1.25 Gbps Using NRZ Coding over uncompensated twin coax cable • Fully integrated CMOS IC • Low Power Consumption • ESD rating >2000V Human Body Model or > 200V (Machine Model)

Si4862DY

Contextual Info: SPICE Device Model Si4862DY Vishay Siliconix N-Channel 16-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4862DY

Contextual Info: SPICE Device Model Si4862DY Vishay Siliconix N-Channel 16-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiR472DP

Abstract: 82137
Contextual Info: SPICE Device Model SiR472DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si4172DY

Abstract: SI4172
Contextual Info: SPICE Device Model Si4172DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SPICE Device Model Si7862ADP Vishay Siliconix N-Channel 16-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range