nokia 1110 lcd
Abstract: nokia 1110 1110 nokia NOKIA ULTRA
Text: - This Document can not be used without Samsung's authorization - 11. References 1 Model Numbering 1) CTO Numbering Rules Model Numbering - New Import Model (DT/NP) ◆ Model Code Structure 1 2 3 Product GroupCode 4 5 6 Product Name Deli mit Product Cha er Model
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BOURNS 3590S
Abstract: H-46-6M 26.6M 3541h S9019 H-46-6A 69108 H-22 H-22-3A H-22-6A
Text: Dials & Precision Potentiometers P E R F E C T O U P L E S Model H-22 Model 3590 Model H-46 Model 3540 Introducing Two New Turns-Counting Dials Full Metal Precision-Counting Dial FEATURES • ■ ■ ■ ■ Model H-46 Part Number H-46-6A H-46-6M Accepts Shaft
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H-46-6A
H-46-6M
15M/S9019
BOURNS 3590S
H-46-6M
26.6M
3541h
S9019
H-46-6A
69108
H-22
H-22-3A
H-22-6A
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4 pin 1123
Abstract: No abstract text available
Text: Engineering Development Model RF Transformer TC1-ED7714/5 Impedance Ratio : 1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a
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TC1-ED7714/5
AT224
TC1-ED7714/5
4 pin 1123
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64895
Abstract: No abstract text available
Text: SPICE Device Model SiR404DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR404DP
18-Jul-08
64895
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4946
Abstract: 6r8j NL453232T-821J-PF rohs 331J TDK NL453232T-150J-PF NL453232T NL453232T-101J-PF NL453232T-102j NL453232T-270J-PF NL453232T-4R7J
Text: TDK Equivalent Circuit Model Library Jan. 13, 2009 Model Type: Simple Model Inductors / NL4532 Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] NL453232T-1R0J-PF 1 3550.7 0.3888 0.2669 NL453232T-1R2J-PF 1.2 4207.8 0.3844 0.2945
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NL4532
NL453232T-1R0J-PF
NL453232T-1R2J-PF
NL453232T-1R5J-PF
NL453232T-1R8J-PF
NL453232T-2R2J-PF
NL453232T-2R7J-PF
NL453232T-3R3J-PF
NL453232T-3R9J-PF
NL453232T-4R7J-PF
4946
6r8j
NL453232T-821J-PF rohs
331J TDK
NL453232T-150J-PF
NL453232T
NL453232T-101J-PF
NL453232T-102j
NL453232T-270J-PF
NL453232T-4R7J
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS890DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C
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SiS890DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4172DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4172DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR472DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR472DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR404DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR404DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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AN1339
Abstract: PIC32 PICC-18 point coordination COLLISION AVOIDANCE
Text: AN1339 The Effect of Adding Radios on 802.11g Network Throughput Author: Setting up the Model Mark Wright and Sidharth Thakur Microchip Technology Inc. The model starts with a control station on an 802.11b/g network. The control case has only the control station
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AN1339
11b/g
DS01339A-page
AN1339
PIC32
PICC-18
point coordination
COLLISION AVOIDANCE
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1000BASE
Abstract: 1000BASE-LX 1000BASE-SX PI90SD1636C PI90SD1636CFC VSC7123
Text: PI90SD1636C SERDES Gigabit Ethernet Transceiver Features Description • IEEE 802.3z Gigabit Ethernet Compliant • Supports 1.25 Gbps Using NRZ Coding over uncompensated twin coax cable • Fully integrated CMOS IC • Low Power Consumption • ESD rating >2000V Human Body Model or > 200V (Machine Model)
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PI90SD1636C
HDMP1636A/HDMP-
VSC7123
64-pin
PI90SD1636C
VSC7123,
PS8922A
1000BASE
1000BASE-LX
1000BASE-SX
PI90SD1636CFC
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PI90SD1636AFDE
Abstract: 1000base SX receiver agilent HDMP1636A ethernet serial converter IC TX-2 RX-2 -G s RX-3 1000BASE 1000BASE-LX 1000BASE-SX
Text: PI90SD1636A SERDES Gigabit Ethernet Transceiver Features Description • IEEE 802.3z Gigabit Ethernet Compliant • Supports 1.25 Gbps Using NRZ Coding over uncompensated twin coax cable • Fully integrated CMOS IC • Low Power Consumption • ESD rating >2000V Human Body Model or > 200V (Machine Model)
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PI90SD1636A
HDMP1636A/HDMP-
VSC7123
64-pin
PI90SD1636A
VSC7123,
PS8641
PI90SD1636AFDE
1000base SX receiver
agilent HDMP1636A
ethernet serial converter
IC TX-2
RX-2 -G s
RX-3
1000BASE
1000BASE-LX
1000BASE-SX
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Untitled
Abstract: No abstract text available
Text: PI90SD1636C SERDES Gigabit Ethernet Transceiver Features Description • IEEE 802.3z Gigabit Ethernet Compliant • Supports 1.25 Gbps Using NRZ Coding over uncompensated twin coax cable • Fully integrated CMOS IC • Low Power Consumption • ESD rating >2000V Human Body Model or > 200V (Machine Model)
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PI90SD1636C
HDMP1636A/HDMP-
VSC7123
64-pin
PI90SD1636C
VSC7123,
PS8922B
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PI90SD1636C
Abstract: FG64 ethernet serial converter 1000BASE 1000BASE-LX 1000BASE-SX VSC7123 PI90SD1636CFG HDMP-1636A
Text: PI90SD1636C SERDES Gigabit Ethernet Transceiver Features Description • IEEE 802.3z Gigabit Ethernet Compliant • Supports 1.25 Gbps Using NRZ Coding over uncompensated twin coax cable • Fully integrated CMOS IC • Low Power Consumption • ESD rating >2000V Human Body Model or > 200V (Machine Model)
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PI90SD1636C
HDMP1636A/HDMP-
VSC7123
64-pin
PI90SD1636C
VSC7123,
PS8922B
FG64
ethernet serial converter
1000BASE
1000BASE-LX
1000BASE-SX
PI90SD1636CFG
HDMP-1636A
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Si7862DP
Abstract: No abstract text available
Text: SPICE Device Model Si7862DP Vishay Siliconix N-Channel 16-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7862DP
14-Mar-02
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Si4862DY
Abstract: No abstract text available
Text: SPICE Device Model Si4862DY Vishay Siliconix N-Channel 16-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4862DY
S-60245Rev.
20-Feb-06
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74170
Abstract: Si7216DN
Text: SPICE Device Model Si7216DN Vishay Siliconix Dual N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7216DN
18-Jul-08
74170
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Untitled
Abstract: No abstract text available
Text: PI90SD1636C SERDES Gigabit Ethernet Transceiver Features Description • IEEE 802.3z Gigabit Ethernet Compliant • Supports 1.25 Gbps Using NRZ Coding over uncompensated twin coax cable • Fully integrated CMOS IC • Low Power Consumption • ESD rating >2000V Human Body Model or > 200V (Machine Model)
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PI90SD1636C
HDMP1636A/HDMP-
VSC7123
64-pin
PI90SD1636C
VSC7123,
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Si4862DY
Abstract: No abstract text available
Text: SPICE Device Model Si4862DY Vishay Siliconix N-Channel 16-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4862DY
18-Jul-08
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Si4862DY
Abstract: No abstract text available
Text: SPICE Device Model Si4862DY Vishay Siliconix N-Channel 16-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4862DY
08-Mar-02
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SiR472DP
Abstract: 82137
Text: SPICE Device Model SiR472DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiR472DP
S-82137
15-Sep-08
82137
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Si4172DY
Abstract: SI4172
Text: SPICE Device Model Si4172DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4172DY
18-Jul-08
SI4172
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7862ADP Vishay Siliconix N-Channel 16-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7862ADP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: V1SHAY Numerical Index Vishay Spectrol MODEL NUMBER. PAGE NO MODEL NUMBER. PAGE NO 3 H . 10 159. 62
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