SIS890DN Search Results

Contextual Info: SPICE Device Model SiS890DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

S1209

Abstract: SiS890DN
Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm

Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm

Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm

Contextual Info: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm

Contextual Info: MCP19114 - Flyback Stand-Alone Evaluation Board User’s Guide  2014 Microchip Technology Inc. DS50002255A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

so8 footprint

Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

N-Channel MOSFETs

Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in