MODEL PACKAGE NPT25100B Search Results
MODEL PACKAGE NPT25100B Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TPH9R00CQH |
|
MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) |
|
||
| TPH9R00CQ5 |
|
N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) |
|
||
| TPH1R306PL |
|
N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) |
|
||
| TPHR8504PL |
|
N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) |
|
||
| TPHR7404PU |
|
N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOSⅨ-H |
|
MODEL PACKAGE NPT25100B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
PIMD3Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power |
Original |
NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3 | |
NPT25100
Abstract: PIMD3
|
Original |
NPT25100 2700MHz 10MHz 3A982 NDS-001 NPT25100 PIMD3 | |
NPT25100
Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
|
Original |
NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR |