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    NPT25100B Search Results

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    NPT25100B Price and Stock

    MACOM NPT25100B

    GaN FETs 2.1-2.7GHz 125W Gain 16.5dB GaN
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    Mouser Electronics NPT25100B
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    Verical NPT25100B 1 1
    • 1 $320.25
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    Richardson RFPD NPT25100B 1 1
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    NPT25100B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NPT25100

    Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
    Contextual Info: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR PDF

    PIMD3

    Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3 PDF

    NPT25100

    Abstract: PIMD3
    Contextual Info: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		NPT25100 2700MHz 10MHz 3A982 NDS-001 NPT25100 PIMD3 PDF