MODEL RB-30 S PT 100 Search Results

NE68819

Abstract: ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68830
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE

BJT BF 331

Abstract: NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195 NE688
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE

BF190

Abstract: F217 rb25 BF380 AD9617 AD9618 AN-259 RC18 31E13 7E15
Contextual Info: i-r ANALOG ► DEVICES AN-259 APPLICATION NOTE ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 AD9617/AD9618 Current Feedback Amplifier Macromodels by William E. Tolley Models of electronic circuits which are based on semi­

TRANSISTOR SE 135

Contextual Info: AVANTEK INC 5DE D • 0A V A N T E K OODfc^SO □ AT-01610 Up to 4 GHz General PurposeSilicon Bipolar Transistor Avantek 100 mil Package Features • 22.0 dBm typical Pi dB at 2.0 GHz • 9.5 d B typical G i dB at 2.0 G Hz • High Galn-Bandw idth Product: 7.0 GHz typical fr

NE856

Abstract: 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST rs e

973-120

Abstract: 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST

transistor NEC D 882 p

Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A
Contextual Info: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP

NE68135

Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
Contextual Info: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o

85500 transistor

Abstract: transistor d 13009 NPN Transistor 13009 transistor MJE 13009 k 13009 c 5929 transistor transistor E 13009 BR 13009 NE685 CCE 7100
Contextual Info: SILICON TRANSISTOR NE685 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER

kf 203 transistor

Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

BJT characteristics

Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
Contextual Info: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e

transistor "micro-x" "marking" 102

Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
Contextual Info: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e

FR4 epoxy dielectric constant 4.4

Abstract: e/AT-33225-BLK
Contextual Info: Whnl H E W L E T T mL'EM P A C K A R D 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package O u tlin e 25 • 70% C ollector Efficiency

mje 1303

Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

transistor bf 968

Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O

Contextual Info: What H E W L E T T * mLliMPACKARD 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ET ACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBmP011t@ 900 MHz, Typ. • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,

MY1016

Abstract: MY1B40G MY-S25A MY1B32-500 MY-A25H MY-A10H MYM-A25L DZ7 550 smc d-z73 MY1B10G
Contextual Info: Mechanically Jointed Rodless Cylinder Series MY1 High Accuracy High Rigidity High Precision Guide Type Series MY1HT High Precision Guide Type Series MY1H Cam Follower Guide Type Series MY1C Slide Bearing Type Series MY1M Basic Type Allowable moment Large Series MY1B

SE 7889

Abstract: 2SC5182 2SC5184 2SC5185 2SC5186 NE687 NE68718 NE68719 NE68730 NE68733
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH 19 3 PIN ULTRA SUPER MINI MOLD 18 (SOT 343 STYLE) • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz • AVAILABLE IN SIX LOW COST PLASTIC SURFACE

lm324 DUAL SUPPLY application

Abstract: LM324 LM324 PIN DIAGRAM constant current load using lm324 LM124 ic lm324 LM124 dip ic LM224 14 PIN DIAGRAM LM324 so14 LM324 ic
Contextual Info: LM124 LM224 - LM324 LOW POWER QUAD OPERATIONAL AMPLIFIERS • WIDE GAIN BANDWIDTH : 1.3MHz ■ INPUT COMMON-MODE VOLTAGE RANGE INCLUDES GROUND ■ LARGE VOLTAGE GAIN : 100dB N DIP14 Plastic Package ■ VERY LOW SUPPLY CURRENT/AMPLI : 375µA ■ LOW INPUT BIAS CURRENT : 20nA

CLC450

Abstract: CLC450AJ CLC450AJE CLC450AJM5 CLC450AJP CLC450ALC spice TRANSFORMER simulation
Contextual Info: N CLC450 Single Supply, Low-Power, High Output, Current Feedback Amplifier General Description Features The CLC450 has a new output stage that delivers high output drive current 100mA , but consumes minimal quiescent supply current (1.5mA) from a single 5V supply. Its current feedback

CLC450

Abstract: CLC450AJ CLC450AJE CLC450AJM5 CLC450AJP CLC450ALC
Contextual Info: N CLC450 Single Supply, Low-Power, High Output, Current Feedback Amplifier General Description Features The CLC450 has a new output stage that delivers high output drive current 100mA , but consumes minimal quiescent supply current (1.5mA) from a single 5V supply. Its current feedback

LM29021

Abstract: LM2902 TSSOP14 tssop14 st automotive
Contextual Info: LM2902 LOW POWER QUAD OPERATIONAL AMPLIFIER • WIDE GAIN BANDWIDTH: 1.3MHz ■ INPUT COMMON-MODE VOLTAGE RANGE INCLUDES GROUND ■ LARGE VOLTAGE GAIN: 100dB ■ VERY LOW SUPPLY CURRENT/AMPLI: 375µA ■ LOW INPUT BIAS CURRENT: 20nA ■ LOW INPUT OFFSET CURRENT:2nA

E 94733

Abstract: AH-1 SOT23
Contextual Info: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device observe handling precaution!

LM2902

Abstract: TSSOP14
Contextual Info: LM2902 LOW POWER QUAD OPERATIONAL AMPLIFIER • WIDE GAIN BANDWIDTH: 1.3MHz ■ INPUT COMMON-MODE VOLTAGE RANGE INCLUDES GROUND ■ LARGE VOLTAGE GAIN: 100dB ■ VERY LOW SUPPLY CURRENT/AMPLI: 375µA ■ LOW INPUT BIAS CURRENT: 20nA ■ LOW INPUT OFFSET CURRENT:2nA