MOLD COMPOUND COB Search Results

cd photo diode

Abstract: class H epoxy resin gold detector IC material composition of chip capacitors ic 555 use with metal detector epoxy resin lead frame resin compound copper bond wire CNY64
Contextual Info: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future

CV-8710

Abstract: EME-G770HCD Sumitomo EME-G600 material SUMITOMO EME G770 EME-G760 MGC CCL-HL832 EME-G600 CCL-HL832 sumitomo g770 Ablestik ablebond 3230 epoxy
Contextual Info:  Chapter 3 Package Materials CHAPTER 3 PACKAGE MATERIALS Introduction JIG-101 Ed 3.0 Declarable Substance List Reporting of 38 Substances of Very High Concern EU REACH Material Declaration Sheets Packages and Packing Methodologies Handbook 6 Jul 2010

TDS05160

Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
Contextual Info: V I^ W Y Vishay Telefunken Table of Package Forms Part Number Package Form Part Number Package Form Part Number Package Form TLBR5410 8 TLHR4401 11 TLMH3100 1 TLDR4400 11 TLHR4405 11 TLMH3101 1 TLDR4900 11 TLHR4600 11 TLMK3100 1 TLDR5400 TLDR5800 8 TLHR4601

BORON

Abstract: BPW34 application BPW77NA BPW41N bpx43-6 BPW43 BPW17 BPW85 BPW34 BPW41N IR DATA
Contextual Info: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future

BTC3838N3

Abstract: FT-32
Contextual Info: CYStech Electronics Corp. Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 1/4 High Frequency Amplifier Transistor 11V, 50mA, 3.2GHz BTC3838N3 Features • High transition frequency, fT=3.2GHz(typ.) • Low output capacitance, Cob=0.8pF(typ.)

A1 marking code amplifier

Abstract: marking A1 TRANSISTOR HJ669A Y2MARKING
Contextual Info: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.09.23 Page No. : 1/3 MICROELECTRONICS CORP. HJ669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ669A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C

marking code k1

Abstract: marking A1 TRANSISTOR HI127
Contextual Info: HI-SINCERITY Spec. No. : HE9017 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-251 • High DC current gain • Bult-in a damper diode at E-C Darlington Schematic

marking A1 TRANSISTOR

Abstract: HJ667A Y2 MARKING a5 marking
Contextual Info: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.07.14 Page No. : 1/3 MICROELECTRONICS CORP. HJ667A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ667A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C

marking code k1

Abstract: marking A1 TRANSISTOR marking y1 HI122
Contextual Info: HI-SINCERITY Spec. No. : HI200102 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications.

Contextual Info: HI-SINCERITY Spec. No. : HE9012 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI340 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI340 is designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.

HSB857J

Abstract: a5 marking
Contextual Info: HI-SINCERITY Spec. No. : HJ200101 Issued Date : 2001.09.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C • Maximum Temperatures

transistor mark code H1

Abstract: A1 marking code amplifier HI649A y2 marking marking Y1 transistor
Contextual Info: HI-SINCERITY Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C

HMBTH10

Contextual Info: HI-SINCERITY Spec. No. : HN200101 Issued Date : 2000.02.01 Revised Date : 2008.07.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBTH10 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.

A1 marking code amplifier

Abstract: HJ117
Contextual Info: HI-SINCERITY Spec. No. : HE6031 Issued Date : 1998.02.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ117 is designed for use in general purpose amplifier and low-speed switching applications.

HE9013

Abstract: HI42C MARK Y1 Transistor
Contextual Info: HI-SINCERITY Spec. No. : HE9013 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI42C is designed for use in general purpose amplifier, low speed switching applications.

HI41C

Contextual Info: HI-SINCERITY Spec. No. : HE9010 Issued Date : 1996.02.14 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI41C is designed for use in general purpose amplifier and switching applications.

Contextual Info: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C

Contextual Info: HI-SINCERITY Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI31C is designed for use in general purpose amplifier and switching applications.

Contextual Info: HI-SINCERITY Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI32C is designed for use in general purpose amplifier and low speed switching applications.

HJ127

Abstract: marking code 8A
Contextual Info: HI-SINCERITY Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-252 • High DC current gain • Built-in a damper diode at E-C Darlington Schematic

A1 marking code amplifier

Abstract: HJ42C
Contextual Info: HI-SINCERITY Spec. No. : HE6013 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ42C is designed for use in general purpose amplifier, low speed switching applications.

HJ41C

Abstract: Y2 MARKING marking Y1 transistor
Contextual Info: HI-SINCERITY Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications.

HI3669

Abstract: ic k1
Contextual Info: HI-SINCERITY Spec. No. : HE9029 Issued Date : 1997.11.14 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3669 is designed for using in power amplifier applications, power switching application.

y2 marking

Abstract: A1 marking code amplifier HJ3669 a5 marking
Contextual Info: HI-SINCERITY Spec. No. : HE6029 Issued Date : 1997.10.24 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.