MOROCCO P3 Search Results

Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC SOT-23 PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS

transistor P39

Abstract: small signal pnp SO642 SO692 4032C OC310
Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS

transistor P39

Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS THE PNP COMPLEMENTARY TYPE IS SO642 APPLICATIONS VIDEO AMPLIFIER CIRCUITS RGB

SO692

Abstract: so692 equivalent SO642 transistor P39
Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR • ■ ■ ■ Type Marking SO 692 P39 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER NPN COMPLEMENT IS SO642 2

transistor P39

Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642

P31 SOT223

Abstract: BSP31 BSP33 BSP41 BSP43 transistors sot-223
Contextual Info: BSP31 BSP33 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking BSP31 P31 BSP33 P33 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE

sot-23 marking p33

Abstract: S05401 SO5401
Contextual Info: SO5401 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking SO5401 P33 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM

transistor P39

Abstract: SO642 SO692 4032C
Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS

so5400

Contextual Info: SO5400 SO5401 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking SO5400 P32 SO5401 P33 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER NPN COMPLEMENTS ARE SO5550 AND

transistor P39

Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642 s

P3020L

Abstract: STP3020L P3020
Contextual Info: STP3020L  N - CHANNEL 30V - 0.019Ω - 40A - TO-220 STripFET POWER MOSFET TYPE V DSS R DS on ID ST P3020L 30 V < 0.022 Ω 40 A • ■ ■ TYPICAL RDS(on) = 0.019 Ω LOW GATE CHARGE A 100oC APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of

P3NB100

Abstract: P3NB10 P3NB100FP STP3NB100 STP3NB100FP
Contextual Info: STP3NB100 STP3NB100FP N - CHANNEL 1000V - 5.3 Ω - 3 A - TO-220/TO-220FP PowerMESH MOSFET TARGET DATA TYPE V DSS R DS on ID ST P3NB100 ST P3NB100FP 1000 V 1000 V < 6Ω < 6Ω 3 A 3 A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3 Ω EXTREMELY HIGH dv/dt CAPABILITY

p30ne06

Abstract: STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220
Contextual Info: STP30NE06 STP30NE06FP  N - CHANNEL 60V - 0.045 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P30NE06 ST P30NE06FP 60 V 60 V < 0.055 Ω < 0.055 Ω 30 A 17 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω

P3NB80

Abstract: P3NB80FP STP3NB80 STP3NB80FP 06-50NS
Contextual Info: STP3NB80 STP3NB80FP  N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P3NB80 ST P3NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A(ùù) TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY

P3NB80FP

Abstract: P3NB80 p3nb C650A STP3NB80 STP3NB80FP
Contextual Info: STP3NB80 STP3NB80FP  N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE ST P3NB80 ST P3NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY

STP36NE06

Abstract: p36ne06fp P36NE06 p36ne06f p36ne morocco p36ne06fp 14A144 IDO24 p36ne0 STripFET
Contextual Info: STP36NE06 STP36NE06FP  N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID ST P36NE06 ST P36NE06FP 60 V 60 V < 0.040 Ω < 0.040 Ω 36 A 20 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY

n mosfet depletion pspice model parameters

Abstract: P38N06 diode AR s1 65 n mosfet pspice parameters NMOS depletion pspice model mosfet 20n N CHANNEL DEPLETION MOSFET TRANSISTOR SDM M6 STP38N06 SDM M6
Contextual Info: STP38N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID ST P38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

R245

Abstract: R255 ST92R195B ST92R195C 92r195 92R195C 92R195B
Contextual Info: AN1845 APPLICATION NOTE SUMMARY OF DIFFERENCES BETWEEN ST92R195B AND ST92R195C 1 INTRODUCTION The aim of this application note is to present a summary of the hardware and software differences between 92R195B and 92R195C products in user mode. 2 SOFTWARE DIFFERENCES

D1274

Contextual Info: SGS-THOMSON S D 1 2 7 4 -0 1 id ig ra o M i RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS • 160 MHz . 13.6 VOLTS ■ COMMON EMITTER ■ P o u t = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF

STTB506B

Contextual Info: STTB506B -TR  TURBOSWITCHTM "B" . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 5A VRRM 600 V VF (max) 1.3 V trr (typ) 45 ns PRELIMINARY DATASHEET 2, 4 (Tab) 3 FEATURES AND BENEFITS 4 SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION, FREEWHEEL OR

diode sg 36

Abstract: diode 400v 2A ultrafast STTB306B
Contextual Info: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTB306B(-TR) TURBOSWITCH " B " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av) 3A V rrm 600 V V f (max) 1.3V trr (typ) 45 ns PRELIMINARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS :

1B13

Abstract: diode 400v 2A ultrafast TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE 600V Ultrafast Diode DPAK Diode SGS-Thomson stta506b SGS-Thomson mosfet ed1b
Contextual Info: STTA506B -TR  TURBOSWITCHTM ”A” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 5A VRRM VF (max) 600 V 1.5 V trr (typ) 20 ns PRELIMINARY DATASHEET 2, 4 (Tab) 3 FEATURES AND BENEFITS 4 SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION, FREEWHEEL OR

STTA506B

Abstract: TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE diode 400v 2A ultrafast 600V Ultrafast Diode DPAK
Contextual Info: STTA506B -TR  TURBOSWITCHTM "A" . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 5A VRRM 600 V VF (max) 1.5 V trr (typ) 20 ns PRELIMINARY DATASHEET 2, 4 (Tab) 3 FEATURES AND BENEFITS 4 SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION, FREEWHEEL OR

Contextual Info: STTB306B -TR  TURBOSWITCHTM ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM VF (max) 600 V 1.3 V trr (typ) 45 ns PRELIMINARY DATASHEET 2, 4 (Tab) 3 FEATURES AND BENEFITS 4 SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION