MOS 7121 Search Results

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

SGSP211

Abstract: sgsp312 P512 74c74 P312 Diode D7E
Contextual Info: s G S-T H O H SO N G7E : 73C D I 1 7 3 j> 7 7121237 D DÜ 17SSQ 7 T ~-3?-/r_ SGSP211/P212 SGSP311/P312 ? SGSP511/P512 N-CHANNHL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

5358A

Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
Contextual Info: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE

8n10

Abstract: SGSP311 8n08 SEFM8N08
Contextual Info: S G S-THOHSON 0?E- D | -7=12^237 .D01flQfl*î 7 | 73C 1 7 5 8 6 D J T*3>^~U SEFM8N08 SEFM8N10 SEFP8N08 \ ’ N-CHANNEL POWER MOS TRANSISTORS SEFP8N,° HIGH SPEED SWITCHING APPLICATIONS v DSS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

Contextual Info: VOLTAGE CONTROLLED CRYSTAL OSCILLATORS 7100 SERIES • Model 7121D ■ Main applications : ISDN ■ Features 8 Dip14pin IC compatible 8 AFC charact : ±100x10–6 min/+2.5±2.0V 8 Directly drives both TTL/C-MOS IC 8 Hermetically sealed package ■ Specification

Contextual Info: VOLTAGE CONTROLLED CRYSTAL OSCILLATORS 7100 SERIES • Model 7121D ■ Main applications : ISDN ■ Features 8 Dip14pin IC compatible 8 AFC charact. : ±100x10–6 min/+2.5±2.0V 8 Directly drives both TTL/C-MOS IC 8 Hermetically sealed package ■ Specification

7121D

Contextual Info: CRYSTAL OSCILLATORS VOLTAGE CONTROLLED CRYSTAL OSCILLATORS 7100 SERIES • Model 7121D ■ Main applications : ISDN ■ Features 8 Dip14pin IC compatible 8 AFC charact : ±100x10–6 min/+2.5±2.0V 8 Directly drives both TTL/C-MOS IC 8 Hermetically sealed package

7121D

Contextual Info: #4. P126-160 02.2.5 4:08 PM ページ 131 VOLTAGE CONTROLLED CRYSTAL OSCILLATORS 7100 SERIES • Model 7121D ■ Main applications : ISDN ■ Features 8 Dip14pin IC compatible 8 AFC charact : ±100x10–6 min/+2.5±2.0V 8 Directly drives both TTL/C-MOS IC

display 7 segmento sm 4105

Abstract: NS_Databook_77 MA1012 MA1002 MM5799 MM5318 MM57109 mm5782n Remote Control Toy Car Receiver IC tx2 MM5871
Contextual Info: MOS/LSI DATABOOK NATIONAL SEMICONDUCTOR i Edge Index by Product Family Clocks Counters/Timers Electronic Organ Circuits TV Circuits Analog to Digital A /D Converters Communications/CB Radio Circuits Watches Calculators Controller Oriented Processor Systems (COPS)

SGSP

Abstract: sgs*P381 SGSP382
Contextual Info: 30E D • 7121237 ÜQ3QD11 fi ■ 'T-3tf- 3_ SGS-THOMSON S G S-THOMSON SGSP381 ilUiOT li*§ ” ' SGSP382 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP381 SGSP382 • • • • • Voss 60 V 50 V ^DSfon 0.06 fi 0.06 fi 'd 28 A 28 A HIGH SPEED SWITCHING APPLICATIONS

TP3055A

Contextual Info: 3DE » _ • 7121537 0021005 1 B T - ^ . d rz j SGS-THOMSON ^7# G*MiHi graRl(gS S G S-TH0MS0N TYPE MTP3055A MTP3055AFI V DSS 60 V 60 V MTP3055A MTP3055AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ^DS(on 0.15 Q 0.15 ß ■ 'd 12 A 10 A • ULTRA FAST SWITCHING - UP TO > 100KHz

4060BE

Abstract: 4060BD hcf4060be 4060B 4060 PIN DIAGRAM 4060b pin configuration diagram cx 4060
Contextual Info: s cos/Mos g S-THOMSON 07C » I 712133? o o m a sa 1 I IN T E G R A T E D X ' fs hccîhcf « kob . i :}'-k_ - I l i C IR C U IT 41C 08835 14-STAGE RIPPLE-CARRY BINARY COUNTER/DIVIDER AND OSCILLATOR • • • • • • • • • MEDIUM-SPEED OPERATION

Contextual Info: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 B n fl fl • 2.5V Gate Drive • Low Drain-Source ON Resistance

Contextual Info: SGS-THOMSON z a STW6NA80 STH6NA80FI :LiGTISi KlD @i N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STWNA80 STH6NA80FI . m . • . . . V dss R ds(od Id 800 V 800 V < 2.4 fi < 2.4 n 5.4 A 3.4 A TYPICAL RDS(on) =0.012 Q. AVALANCE RUGGED TECHNOLOGY

SP571

Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
Contextual Info: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

Contextual Info: C T S G S -1 H M S 0 N ^ 7# S T V 5 5 N0 5 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STV55N05L V dss RDS on Id 50 V < 0.023 Û 55 A • . . . . . . . TYPICAL Ros(on) = 0.02 £1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: 7T2TE37 ÜOMSb?^ 752 • S G T H IRF720 IRF720FI SGS-THOMSON ULIKgTO«! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF720 IRF720FI ■ . ■ ■ « V dss R D S on Id 400 V 400 V < 1.8 £2 < 1 .8 0 4.2 A 3 A TYPICAL RDs(on) = 1.65 £2 AVALANCHE RUGGED TECHNOLOGY

Schematics AL 1450 DV

Abstract: ixc 844 schematic diagram welding inverter STP5N80 845 diode DC/AC to DC smps circuit diagram schematic diagram dc-ac inverter schematic diagram dc-ac welding inverter CIRCUIT STP5N80FI RC50
Contextual Info: _ • 7^2^237 00Mb2öl « V# _ BiSGTH S C S -T H O M S O N [*^ Q [E[L gTi»«S STP5N80 STP5N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V STP5N80 S TP5N 80FI ■ . . . . ■ . dss 800 V 800 V RDS(on) Id < 2 0 < 2 n 5 .5 A

IRF151

Contextual Info: 3QE D £Ÿ 7 • 7=12^537 QQ3G1SÖ 7 ■ H " . -<3 SCS-THOMSON S G S-THOMSON ■[LH^MKgS “ IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A

irf720

Abstract: diode ko 474
Contextual Info: 7T2TE37 ÜOMSb?^ 752 • S G T H IRF720 IRF720FI SGS-THOMSON ULIKgTO«! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF720 IRF720FI ■ . ■ ■ « V dss R D S on Id 400 V 400 V < 1.8 £2 < 1 .8 0 4.2 A 3 A TYPICAL RDs(on) = 1.65 £2 AVALANCHE RUGGED TECHNOLOGY

SGSP239

Contextual Info: 3QE » • 002^33 r z z SGS-THOMSON ^7# R5ilD g[E](s i[L[i ¥^©iö(gi 5 'T g s-thohso_n_ SGSP239 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP239 VDss 500 V ^ D S (o n ) 8.5 n 1.2 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING

STV60N06

Contextual Info: r z 7 SGS-THOMSON Ä 7 # R!tlD S[ri ilLICTi iD©l STV60N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss RDS(on Id STV60N06 60 V < 0.02 Û 60 A • TYPICAL R d s (o ii) = 0.017 £2 . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

hcf4047be

Abstract: n13a hcf4047
Contextual Info: rz r ^ 7 1 S G S -T H O M S O N c iia n e æ iiL iiC T M n e g H C C /H C F 4 0 4 7 B LOW-POWER MONOSTABLE/ASTABLE MULTIVIBRATOR . LOW POWER CONSUMPTION : SPECIAL COS/MOS OSCILLATOR CONFIGURATION . MONOSTABLE one-shot OR ASTABLE (freerunning) OPERATION . TRUE AND COMPLEMENTED BUFFERED