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    MOS TRANSISTOR EQUIVALENT BOOK Search Results

    MOS TRANSISTOR EQUIVALENT BOOK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOS TRANSISTOR EQUIVALENT BOOK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SLVA072

    Abstract: texas instruments the voltage regulator handbook UGF1 The voltage regulator handbook TPS76333 TPS76350 TUNNEL book
    Text: Technical Review of Low Dropout Voltage Regulator Operation and Performance Application Report August 1999 Mixed Signal Products SLVA072 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue


    Original     		PDF SLVA072 SLVA072 texas instruments the voltage regulator handbook UGF1 The voltage regulator handbook TPS76333 TPS76350 TUNNEL book

    IEI-1213

    Abstract: MEI-1202 MF-1134 PA1700 uPA1700
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR µPA1700 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Tran- in millimeter sistor designed for DC/DC converter and power management applications of note book computers.


    Original     		PDF PA1700 PA1700G IEI-1213 MEI-1202 MF-1134 PA1700 uPA1700

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide

    D1403

    Abstract: No abstract text available
    Text: NEC / MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES l Channel Temperature 175 Degree Rated 0 Super Low On-state Resistance


    Original     		PDF NP30NOGHLD NP30N06lLD O-251 O-252 D1403

    2sk135 application note

    Abstract: 2sk1058 equivalent k176 2SK2265 2sk135 audio application 2SC1343 2SK186 2sk135 application 2SK135 audio amplifier 2SK317
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF REJ27G0017-0200/Rev 2sk135 application note 2sk1058 equivalent k176 2SK2265 2sk135 audio application 2SC1343 2SK186 2sk135 application 2SK135 audio amplifier 2SK317

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    BSP149 equivalent

    Abstract: DC chopper n mosfet depletion pspice model parameters BUZ MOSFET kp1022 BSP149 depletion mode mosfet 100 MHz NMOS depletion pspice model SIPMOS SPICE BSS SPICE
    Text: SPICE Models for SIPMOS Components Version: Purpose: Author: 3.1 Clarification of SIPMOS - SPICE models Dr. P. Türkes, Dr. M. März 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor allow circuit developers to benefit inexpensively from CAD methods, since such computers make it


    Original     		PDF

    BUZ12

    Abstract: SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ12AL BSP149 equivalent BUZ MOSFET kp1022 SIPMOS BUZ41A
    Text: Power Semiconductor Application Note AN_PSM1e SPICE Models for SIPMOS Components Purpose: Author: Clarification of SIPMOS - SPICE models V1.0 Dr. P. Türkes, Dr. M. März, P. Nance 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor


    Original     		PDF compon99 BUZ12 SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ12AL BSP149 equivalent BUZ MOSFET kp1022 SIPMOS BUZ41A

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    transistor k2541

    Abstract: K1398 J411 fet k1482 K1484 K679A k2541 k1272 transistor k1272 K1274
    Text: SMALL-SIGNAL MOS FET SERIES Signal MOS FET A wide line-up from small-signal interface applications to semi-power switching applications Small-signal MOS FETs have been increasingly employed mainly in portable systems as highperformance switching elements that supersede the existing bipolar transistors.


    Original     		PDF D11050EJ4V0PF00 transistor k2541 K1398 J411 fet k1482 K1484 K679A k2541 k1272 transistor k1272 K1274

    YZ-033

    Abstract: induction cooker circuit diagram sk022a 2DE60 control circuit of induction cooker diagram induction cooker shinetsu G-746 shinetsu G746 SK16B voltage detection induction cooker
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF REJ27G0015-0100/Rev YZ-033 induction cooker circuit diagram sk022a 2DE60 control circuit of induction cooker diagram induction cooker shinetsu G-746 shinetsu G746 SK16B voltage detection induction cooker

    Transistor MY

    Abstract: QuickSwitch as a 5V TTL to 3V TTL Converter TRANSISTOR P95 P77 transistor 1N4148 QS3861
    Text: PRELIMINARY APPLICATION NOTE H8/300L Hardware Interface Technique to IO Port HWio Introduction This application note is to assist the product design engineers to consider the various electrical characteristics and behaviors of all IO ports that are based on CMOS logic to ensure correct operation when implementing with them. In addition, it would also highlights


    Original     		PDF H8/300L H8/38024F H8/300L H8/38024F AN0303017/Rev1 Transistor MY QuickSwitch as a 5V TTL to 3V TTL Converter TRANSISTOR P95 P77 transistor 1N4148 QS3861

    alternator rectifier diode 50a

    Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
    Text: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein


    Original     		PDF C01EA0 H1-C01EA0-9906015TA alternator rectifier diode 50a EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h

    SMA2409M

    Abstract: spf 9001 sanken mn638s SPF0001 SPF3004 SPF3006 relay Re 04501 Ignition ICs SPF7211 ssd103
    Text: SANKEN ELECTRIC CO.,LTD. CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein


    Original     		PDF H1-C01ED0-0607020TA SMA2409M spf 9001 sanken mn638s SPF0001 SPF3004 SPF3006 relay Re 04501 Ignition ICs SPF7211 ssd103

    of mosfet BUZ 384

    Abstract: BUZ MOSFET thyristor capacitive discharge ignition tig welding transistor CF leistungstransistoren BUZ 338 SIEMENS MOSFET BUZ Ignition weld tig SIEMENS THYRISTOR
    Text: Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 50 V . 1000 V und 10 mΩ . 8 Ω Power transistors in the 50 V to 1000 V and 10 mΩ to 8 Ω range


    Original     		PDF MIL-STD-883, MIL-STD-883; of mosfet BUZ 384 BUZ MOSFET thyristor capacitive discharge ignition tig welding transistor CF leistungstransistoren BUZ 338 SIEMENS MOSFET BUZ Ignition weld tig SIEMENS THYRISTOR

    MN638S

    Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein


    Original     		PDF infringement0718 H1-C01EC0-0110015TA MN638S STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M

    2SK1491

    Abstract: MP-88 TC239
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1491 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1491 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 0.15 Ω MAX. (VGS = 10 V, ID = 13 A)


    Original     		PDF 2SK1491 2SK1491 MP-88 TC239

    NEC K 2500

    Abstract: transistor NEC 2500 2SK1492 MP-88 Low Input Capacitance MOS FET
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1492 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1492 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 0.1 Ω MAX. (VGS = 10 V, ID = 18 A)


    Original     		PDF 2SK1492 2SK1492 NEC K 2500 transistor NEC 2500 MP-88 Low Input Capacitance MOS FET

    hitachi mosfet power amplifier audio application

    Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
    Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3


    OCR Scan     		PDF RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56

    siemens r10 core

    Abstract: P2616 300w 20A rf amplifier flyback transformer lg tdk P2616 UC3840
    Text: F= 7 SCS-THOMSON APPLICATION NOTE A WIDE RANGE INPUT DC-DC POWER CONVERTER INTRODUCTION This 300W DC-DC converter, shown in Fig. 1 has a flyback topology and works in continuous mode with single output and features primary side control. The Power switch is designed around an emitter


    OCR Scan     		PDF SGSUC3840 SGS2N2222A SGS2N2907 SGSP301 IRFZ42 BUX12 350pF 220pF siemens r10 core P2616 300w 20A rf amplifier flyback transformer lg tdk P2616 UC3840

    IRFZ42 equivalent

    Abstract: tdk P2616 P2616 BUX12 UC3840
    Text: / = 7 SGS-THOMSON * 7 * , . 6 [L tlC T tM M ! A PPLICA TIO N NOTE A WIDE RANGE INPUT DC-DC POWER CONVERTER INTRODUCTION This 300W DC-DC converter, shown in Fig. 1 has a flyback topology and works in continuous mode with single output and features primary side control.


    OCR Scan     		PDF SGSUC3840 SGS2N2222A SGS2N2907 SGSP301 IRFZ42 BUX12 350pF 220pF IRFZ42 equivalent tdk P2616 P2616 UC3840

    rca 2n3375

    Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
    Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)


    OCR Scan     		PDF 000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor

    of mosfet BUZ 384

    Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
    Text: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range


    OCR Scan     		PDF SIL00001 SIL00002 MILSTD-883, of mosfet BUZ 384 simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn

    siemens dioden

    Abstract: leistungstransistoren thyristor capacitive discharge ignition Leistungsdiode car ignition circuit diagram of mosfet BUZ 384 car ignition chip die npn transistor Siemens Halbleiter
    Text: Technische Angaben Erläuterungen der Datenblattwerte Qualität und Zuverlässigkeit Technical Inform ation Explanation o f Data Sheet Parameters Q uality and R eliability SIEM ENS 1 Übersicht 1.1 SIPM OS-Leistungstransistoren Leistungstransistoren im Bereich 5 0 V .


    OCR Scan     		PDF SIL00001 MILSTD-883, siemens dioden leistungstransistoren thyristor capacitive discharge ignition Leistungsdiode car ignition circuit diagram of mosfet BUZ 384 car ignition chip die npn transistor Siemens Halbleiter