MOSFET 100A 600V Search Results

Contextual Info: 10-FZ06NBA110FP-M306L28 target datasheet flowBoost0 600V/110A PS* Features flow0 12mm housing ● *PS: 2x 110A parallel switch 100A IGBT and 99mΩ MOSFET ● high speed IGBT with C6 MOSFET and SiC buck diodes ● high efficiency dual booster ● ultra fast switching frequency

Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diod Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

CPWR-AN12

Abstract: CAS100H12AM1
Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

Contextual Info: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode

MSK4805

Contextual Info: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. HIGH TEMPERATURE 1200V/100A SiC HALF BRIDGE PEM 4805 FEATURES: Operation to +175°C Case Designed for High Temperature Applications Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching

4804

Abstract: C 4804 4804 B MOSFET Module 24v 200A MSK4804
Contextual Info: MIL-PRF-38534 CERTIFIED 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM FEATURES: 4804 315 701-6751 Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery

C 4804

Contextual Info: MIL-PRF-38534 CERTIFIED 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM 4804 315 701-6751 FEATURES: Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery

C 4804

Contextual Info: MIL-PRF-38534 CERTIFIED FACILITY 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM FEATURES: 4804 315 701-6751 Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery

Contextual Info: MIL-PRF-38534 CERTIFIED FACILITY 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM FEATURES: 4804 315 701-6751 Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery

MSK4804

Abstract: d413
Contextual Info: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM FEATURES: 4804 315 701-6751 Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery

"clip bonding"

Abstract: 4 CCFL Lamps Inverter 8 CCFL Lamps Inverter circuit ATPAK mosfet h bridge inverter 40w inverter circuit CCFL 2 CCFL Lamps Inverter CCFL inverter 32 ATP206
Contextual Info: T OP I C S Promotional Product Topics Thin-type large-current Power MOSFET Halogen-free 「ATPAK Series 」 New Package By applying Sanyo’s unique Clip Bonding Tech, the new ATPAK series realized 100A rated current, which is the largest among the same class.

CAS100H12

Contextual Info: CAS100H12AM1 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode VDS 1.2 kV RDS on (TJ = 25˚C) Not recommended for new designs. Replacement part: CAS120M12BM2 EOFF (TJ = 125˚C) Features • • • • • • 1.8 mJ Package

CAS100H12

Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
Contextual Info: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode

N mosfet 250v 600A

Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
Contextual Info: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •

AS4A

Abstract: SSP4N60AS SSP4N60A
Contextual Info: SSP4N60AS Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA Max. @ VDS= 600V

SSS4N60AS

Contextual Info: SSS4N60AS Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA M ax. @ VDS= 600V

SSS4N60AS

Contextual Info: SSS4N60AS Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ID = 2.3 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA (Max.) @ VDS = 600V

AOTF12N60

Abstract: AOT12N60 VDS-100V AOTF12
Contextual Info: AOT12N60 / AOTF12N60 600V, 12A N-Channel MOSFET formerly engineering part number AOT9610/AOTF9610 General Description Features The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance

SSR -100 DD

Contextual Info: SSR/U4N60A A dvanced Power MOSFET FEATURES BVDSS = 600 V Rugged Gate Oxide Technology ^DS on “ • ■ Lower Input Capacitance Improved Gate Charge _Q ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ V DS = 600V ■ Lower R ds(on) : 2.037 ii(T y p )

Contextual Info: SSP4N60AS A d va n ce d Power MOSFET FEATURES B V DS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ V os = 600V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: International B Rectifier Provisional Data Sheet PD-9.1149 IRGKIN100M06 "CH O PPER" IG B T INT-A-PAK Low conduction loss IG B T V Œ = 600V lc = 100A V ce O N < 2 .0 V • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail“