MOSFET 100V 50A Search Results

D40NF10

Abstract: D40NF
Contextual Info: STD40NF10 N-channel 100V - 0.025Ω - 50A - DPAK STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STD40NF10 100V < 0.028Ω 50A • 100% avalanche tested ■ Exceptional dv/dt capability 3 1 DPAK Description This Power MOSFET is the latest development of

Mosfet

Abstract: SSF1016A
Contextual Info: SSF1016A 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 13.8mohm(typ.) ID 75A ① D2PAK Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced trench MOSFET process technology Special designed for PWM, load switching and

p40nf10

Abstract: STD40NF10 D40NF JESD97 STP40NF10 TF415
Contextual Info: STD40NF10 STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on Max ID STD40NF10 100V <0.028Ω 50A STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge ■

irf150

Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
Contextual Info: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

Contextual Info: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

70N10

Contextual Info: STD60N10 STP70N10 N-channel 100V - 0.016Ω - 60A TO-220 / DPAK Low RDS on Power MOSFET Preliminary Data Features • Type VDSS RDS(on)Max ID STD60N10 100V <0.0195Ω 60A STP70N10 100V <0.0195Ω 65A Exceptional dv/dt capability 3 3 1 ■ Extremely low on-resistance RDS(on)

2E12

Abstract: FRK160D FRK160H FRK160R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRK160D FRK160H FRK160R
Contextual Info: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

b50ne10

Abstract: B50NE1 STB50NE10T4 B50N JESD97 STB50NE10
Contextual Info: STB50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization

B50NE10

Abstract: STB50NE10T4 JESD97 STB50NE10 47S25
Contextual Info: STB50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization

p50ne1

Abstract: p50ne10 st mosfet st 50a st 393 JESD97 STP50NE10
Contextual Info: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization

P40NF10

Abstract: JESD97 STP40NF10 p40nf
Contextual Info: STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ Application oriented characterization

p40nf10

Contextual Info: STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ Application oriented characterization

p50ne1

Abstract: P50NE10 p50ne STP50NE10
Contextual Info: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization

Contextual Info: yw us FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040£i TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

B40NF10

Contextual Info: STB40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ 100% avalanche tested ■ Application oriented characterization

B40NF10

Abstract: N-channel MOSFET to-247 50a B40nF JESD97 STB40NF10 STB40NF10T4 12NEW
Contextual Info: STB40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ 100% avalanche tested ■ Application oriented characterization

DIODE T25

Abstract: DIODE T25 4 E80276 FM200TU-2A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated

2N6896

Abstract: TB334
Contextual Info: 2N6896 Data Sheet December 2001 -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features • -6A, -100V The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching

Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated

"MOSFET Module"

Abstract: E80276 FM200TU-2A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated

Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated

F12n10

Contextual Info: RFP12N10L Data Sheet April 2005 Features 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as

f12n10l

Abstract: f12n10 AN7254 AN7260 RFP12N10L TB334
Contextual Info: RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as