STP50NE10 Search Results

SD-50 diode

Abstract: STP50NE10L
Contextual Info: STP50NE10L  N - CHANNEL 100V - 0.020Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10L • ■ ■ ■ ■ V DSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

p50ne1

Contextual Info: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A ) s ( t c u d o ) r s ( P Description t c e t u e d l o o r s Internal schematic diagram P b e O t e l ) o s ( s t

Contextual Info: STP50NE10L N - CHANNEL 100V - 0.020Q - 50A - TO-220 _STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE1OL Voss R D S o n Id 100 V <0.025 Î2 50 A . TYPICAL R d s (oii) = 0.020 Q m EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED . LOW GATE CHARGE AT 100 °C

STP50NE10L

Abstract: GS 393
Contextual Info: STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10L • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

Contextual Info: STP50NE10 N -CHANNEL 100V -0.021 £2- 50A TO-220 STripFET POWER MOSFET TYPE S T P 50 N E 1 0 . . . . . V dss 100 V R d S o Id ii < 0 .0 2 7 Q. 50 A TYPICAL R D S (on) = 0.021 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C

STP50NE10L

Contextual Info: STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE10L • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

p50ne1

Abstract: P50NE10 p50ne STP50NE10
Contextual Info: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization

STP50NE10L

Contextual Info: STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10L VDSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED

ym 238

Contextual Info: STP50NE10 N - CHANNEL 100V - 0.021Q - 50A - D2PAK STripFET POWER MOSFET TYPE S TP 50N E10 V dss RDS on Id 1 00 V <0.027 Q 50 A TYPICAL Ftos(on) = 0.021 Q m EXCEPTIONALdv/dt CAPABILITY . . 100% AVALANCHE TESTED . LOW GATE CHARGE AT 100 °C . APPLICATION ORIENTED

Contextual Info: STP50NE10 N - CHANNEL 100V - 0.021 Q - 50A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE10 Voss R D S o n Id 100 V < 0 .0 2 7 Î2 50 A . TYPICAL R d s ( o ii ) = 0.021 Q m EXCEPTIONAL dv/dt CAPABILITY . . . 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C

STP50NE10L

Contextual Info: STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE10L • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

STP50NE10

Contextual Info: STP50NE10  N - CHANNEL 100V - 0.021Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10 • ■ ■ ■ ■ V DSS R DS on ID 100 V <0.027 Ω 50 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

Contextual Info: STP50NE10L N - CHANNEL 100V - 0.020ft - 50A - TO-220 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE S TP 50N E 10L . . . . . V dss R dS oii Id 100 V <0.025 a 50 A TYPICAL RDS(on) = 0.020 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C

STP50NE10

Contextual Info: STP50NE10  N - CHANNEL 100V - 0.021Ω - 50A - D2PAK STripFET POWER MOSFET TYPE STP50NE10 • ■ ■ ■ ■ V DSS R DS on ID 100 V <0.027 Ω 50 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

Contextual Info: STP50NE10L N - CHANNEL 100V - 0.020Q - 50A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE10L Voss R D S o n Id 100 V < 0 .0 2 5 Î2 50 A . TYPICAL R d s ( o ii ) = 0.020 Q m EXCEPTIONAL dv/dt CAPABILITY . . . 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C

STP50NE10

Contextual Info: STP50NE10 N - CHANNEL 100V - 0.021Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.027 Ω 50 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

stu9nc80zi

Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
Contextual Info: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

ste30na50

Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
Contextual Info: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

CYN17F-3

Abstract: CYN17 cyn17f Efd30 24v flyback transformer 24V PULSE TRANSFORMER microcontroller STP50NE10 AN1377 EFD30 ID12
Contextual Info: AN1377 APPLICATION NOTE FLEXIBLE DC-DC CONVERTERS FOR EASY INCLUSION IN AN OEM PROJECT B. Taylor - J. Noe 1. INTRODUCTION. Many OEMs, when they are involved with introducing a new product, have little or no experience of designing in the DC Sourced power supply for such a project. For one reason, or another, they may