FS10KM
Abstract: FS10KM-10A 200v 10A mosfet
Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS10KM-10A FS10KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3
|
Original
|
PDF
|
FS10KM-10A
O-220FN
FS10KM
FS10KM-10A
200v 10A mosfet
|
FS18KM-10A
Abstract: No abstract text available
Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS18KM-10A FS18KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS18KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3
|
Original
|
PDF
|
FS18KM-10A
O-220FN
FS18KM-10A
|
FS14KM-10A
Abstract: No abstract text available
Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS14KM-10A FS14KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS14KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3
|
Original
|
PDF
|
FS14KM-10A
O-220FN
FS14KM-10A
|
p11nk50zfp
Abstract: p11nk50z B11NK50Z p11nk50 STP11NK50ZFP B11NK50 st 393 STB11NK50Z STB11NK50ZT4 STP11NK50Z
Text: STB11NK50Z - STP11NK50ZFP STP11NK50Z N-channel 500V - 0.48Ω - 10A TO220-TO220FP-D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK50Z 500 V <0.52Ω 10A 125W STP11NK50Z 500 V <0.52Ω 10A 125W STP11NK50ZFP 500 V
|
Original
|
PDF
|
STB11NK50Z
STP11NK50ZFP
STP11NK50Z
O220-TO220FP-D2PAK
STB11NK50Z
O-220FP
O-220
p11nk50zfp
p11nk50z
B11NK50Z
p11nk50
STP11NK50ZFP
B11NK50
st 393
STB11NK50ZT4
STP11NK50Z
|
FS5KM-10A
Abstract: fs5km10a FS5KM-10A equivalent
Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS5KM-10A FS5KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS5KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2
|
Original
|
PDF
|
FS5KM-10A
O-220FN
FS5KM-10A
fs5km10a
FS5KM-10A equivalent
|
FS3KM
Abstract: FS3KM-10A 200v 10A mosfet
Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS3KM-10A FS3KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2
|
Original
|
PDF
|
FS3KM-10A
O-220FN
FS3KM
FS3KM-10A
200v 10A mosfet
|
P11NK40Z
Abstract: P11NK40 P11NK40ZFP STP11NK40Z
Text: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO220-TO220FP-D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK50Z 500V <0.55Ω 10A 110W STP11NK50Z 500V <0.55Ω 10A 110W 3 3 1 STP11NK50ZFP
|
Original
|
PDF
|
STB11NK40Z
STP11NK40ZFP
STP11NK40Z
O220-TO220FP-D2PAK
STB11NK50Z
STP11NK50Z
STP11NK50ZFP
O-220
O-220FP
P11NK40Z
P11NK40
P11NK40ZFP
STP11NK40Z
|
Untitled
Abstract: No abstract text available
Text: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO220-TO220FP-D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK50Z 500V <0.55Ω 10A 110W STP11NK50Z 500V <0.55Ω 10A 110W 3 3 1 STP11NK50ZFP
|
Original
|
PDF
|
STB11NK40Z
STP11NK40ZFP
STP11NK40Z
O220-TO220FP-D2PAK
STB11NK50Z
STP11NK50Z
STP11NK50ZFP
O-220
O-220FP
|
P channel MOSFET 1A
Abstract: 2E12 3E12 FRM450D FRM450H FRM450R Rad Hard in Fairchild for MOSFET 250V 10A TF 106
Text: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
PDF
|
FRM450D,
FRM450R,
FRM450H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
P channel MOSFET 1A
2E12
3E12
FRM450D
FRM450H
FRM450R
Rad Hard in Fairchild for MOSFET
250V 10A TF 106
|
Untitled
Abstract: No abstract text available
Text: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
PDF
|
FRM450D,
FRM450R,
FRM450H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
|
mosfet 10a 500v
Abstract: 2E12 3E12 FRM450D FRM450H FRM450R N-Channel mosfet 400v
Text: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
|
Original
|
PDF
|
FRM450D,
FRM450R,
FRM450H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
mosfet 10a 500v
2E12
3E12
FRM450D
FRM450H
FRM450R
N-Channel mosfet 400v
|
FS25SM-10A
Abstract: FS25SM fs25sm10a
Text: MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE FS25SM-10A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 20.0 5.0 ➃ 4 2 f 3.2 2 19.5MIN. 1.0 ➀ ➁ 4.4 ➂ 5.45 5.45 0.6 2.8 4 ➁➃ ● 10V DRIVE ● VDSS . 500V
|
Original
|
PDF
|
FS25SM-10A
FS25SM-10A
FS25SM
fs25sm10a
|
BUZ45B
Abstract: TA17435 BUZ-45B BUZ45 transistor BUZ45 500V N-Channel MOSFET ID 29A
Text: BUZ45B Semiconductor Data Sheet 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.500Ω (BUZ45 field effect transistor designed for applications such as
|
Original
|
PDF
|
BUZ45B
BUZ45
TA17435.
BUZ45B
TA17435
BUZ-45B
transistor BUZ45
500V N-Channel MOSFET ID 29A
|
mosfet 500v 10A
Abstract: FL14KM-10A
Text: MITSUBISHI POWER MOSFET RY FL14KM-10A INA ELIM on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som PR HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL14KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3
|
Original
|
PDF
|
FL14KM-10A
mosfet 500v 10A
FL14KM-10A
|
|
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 10N50K-MT Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N50K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum
|
Original
|
PDF
|
10N50K-MT
10N50K-MT
QW-R502-A97
|
10N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET 1 The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
PDF
|
10N50
O-220
10N50
O-220F1
QW-R502-531
|
Untitled
Abstract: No abstract text available
Text: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss
|
Original
|
PDF
|
AOTF10N50FD
AOTF10N50FD
AOTF10N50FDL
O-220F
|
Untitled
Abstract: No abstract text available
Text: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss
|
Original
|
PDF
|
AOTF10N50FD
AOTF10N50FD
AOTF10N50FDL
O-220F
|
DM t 96 10a 250v
Abstract: IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR
Text: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
|
Original
|
PDF
|
4167A
O-257AA)
IRFY11N50CMA
O-257AA
DM t 96 10a 250v
IRFY11N50CMA
4.5V TO 100V INPUT REGULATOR
|
IXFC16N50P
Abstract: 16n50 16N50P F16N f16n50
Text: IXFC16N50P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
IXFC16N50P
200ns
220TM
E153432
16N50P
5J-745
5-1-09-C
IXFC16N50P
16n50
F16N
f16n50
|
Untitled
Abstract: No abstract text available
Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
PDF
|
FQP10N50CF
FQPF10N50CF
FQPF10N50CF
|
250V 10A TF 106
Abstract: No abstract text available
Text: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
|
OCR Scan
|
PDF
|
FRM450D,
FRM450R,
FRM450H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
O-204AA
250V 10A TF 106
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET ! FK10KM-10 | HIGH-SPEED SWITCHING USE FK10KM-10 • V dss . 500V • TDS ON (MAX) .1.13 ft • ID . 10A
|
OCR Scan
|
PDF
|
FK10KM-10
150ns
|
Untitled
Abstract: No abstract text available
Text: h a r r is ^ S E M I C O N D U C T O R FRM450D, FRM450R, FRM45ÛH 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.6000 TO-204AA • Second Generation Rad Hard MOSFET Result» From New Design Concepts
|
OCR Scan
|
PDF
|
FRM450D,
FRM450R,
FRM45
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
FRM450H
|
