MOSFET 10A 500V Search Results

FS10KM

Abstract: FS10KM-10A 200v 10A mosfet
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS10KM-10A FS10KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

FS18KM-10A

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS18KM-10A FS18KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS18KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

FS14KM-10A

Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS14KM-10A FS14KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS14KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

p11nk50zfp

Abstract: p11nk50z B11NK50Z p11nk50 STP11NK50ZFP B11NK50 st 393 STB11NK50Z STB11NK50ZT4 STP11NK50Z
Contextual Info: STB11NK50Z - STP11NK50ZFP STP11NK50Z N-channel 500V - 0.48Ω - 10A TO220-TO220FP-D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK50Z 500 V <0.52Ω 10A 125W STP11NK50Z 500 V <0.52Ω 10A 125W STP11NK50ZFP 500 V

FS5KM-10A

Abstract: fs5km10a FS5KM-10A equivalent
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS5KM-10A FS5KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS5KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2

FS3KM

Abstract: FS3KM-10A 200v 10A mosfet
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS3KM-10A FS3KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2

P11NK40Z

Abstract: P11NK40 P11NK40ZFP STP11NK40Z
Contextual Info: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO220-TO220FP-D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK50Z 500V <0.55Ω 10A 110W STP11NK50Z 500V <0.55Ω 10A 110W 3 3 1 STP11NK50ZFP

Contextual Info: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO220-TO220FP-D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK50Z 500V <0.55Ω 10A 110W STP11NK50Z 500V <0.55Ω 10A 110W 3 3 1 STP11NK50ZFP

P channel MOSFET 1A

Abstract: 2E12 3E12 FRM450D FRM450H FRM450R Rad Hard in Fairchild for MOSFET 250V 10A TF 106
Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

mosfet 10a 500v

Abstract: 2E12 3E12 FRM450D FRM450H FRM450R N-Channel mosfet 400v
Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

FS25SM-10A

Abstract: FS25SM fs25sm10a
Contextual Info: MITSUBISHI Nch POWER MOSFET FS25SM-10A HIGH-SPEED SWITCHING USE FS25SM-10A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 20.0 5.0 ➃ 4 2 f 3.2 2 19.5MIN. 1.0 ➀ ➁ 4.4 ➂ 5.45 5.45 0.6 2.8 4 ➁➃ ● 10V DRIVE ● VDSS . 500V

BUZ45B

Abstract: TA17435 BUZ-45B BUZ45 transistor BUZ45 500V N-Channel MOSFET ID 29A
Contextual Info: BUZ45B Semiconductor Data Sheet 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.500Ω (BUZ45 field effect transistor designed for applications such as

250V 10A TF 106

Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: MITSUBISHI Nch POWER MOSFET ! FK10KM-10 | HIGH-SPEED SWITCHING USE FK10KM-10 • V dss . 500V • TDS ON (MAX) .1.13 ft • ID . 10A

10n50

Abstract: TO-220F1 DIODE 531 mosfet 10a 500v 10N50G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET 1 „ The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 10N50K-MT Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N50K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum

10N50

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET 1 „ The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: h a r r is ^ S E M I C O N D U C T O R FRM450D, FRM450R, FRM45ÛH 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.6000 TO-204AA • Second Generation Rad Hard MOSFET Result» From New Design Concepts

Contextual Info: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss

Contextual Info: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss

DM t 96 10a 250v

Abstract: IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IXFC16N50P

Abstract: 16n50 16N50P F16N f16n50
Contextual Info: IXFC16N50P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.