BUZ45 Search Results

Contextual Info: BUZ45A 23 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T O -2 0 4 A A • 8.3A, 500V B O T T O M VIEW • rDS on = ° - 8 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: • 4302571 0 D 5 3 fl3 t> Qfl3 ■ HAS BUZ45A 23 HARRIS N-Channel Enhancem ent-Mode Power Field-Effect Transistor August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 8.3A, 500V • rDS on = o .an • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds

Contextual Info: N AUER P H I L I P S / D I S CR E T E OtE D PowerMOS transistor • ~ bbSBTBl QQ14ttl 4 ■ BUZ45B r-39-i3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in

BUZ10A

Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
Contextual Info: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B

f5j transistor

Abstract: TRANSISTOR BO 346 TRANSISTOR f5j BUZ45A TRANSISTOR BO 345 v103 4j TRANSISTOR BO 344 diode sy 345 Hc 346 s TRANSISTOR V103 transistor
Contextual Info: N AMER PHILIPS/DÎSCRETE i BUZ45A PowerMOS transistor ObE D ^53=131 OGlMbSM 7 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,

BUZ900D

Abstract: BUZ50ASM BUZ50B-220SM
Contextual Info: SEMELAB pic Type_No BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P

buz45

Contextual Info: / = T SGS-THOMSON *7# R iflö fg [^ S I[L I in M )iD (g i BUZ45 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS BUZ45 500 V R DS(on) 0.6 fi *D 9.6 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SW ITCHING FOR OPERATION AT < 100KHz

BUZ45B

Abstract: TA17435 BUZ-45B BUZ45 transistor BUZ45 500V N-Channel MOSFET ID 29A
Contextual Info: BUZ45B Semiconductor Data Sheet 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.500Ω (BUZ45 field effect transistor designed for applications such as

Contextual Info: 4302271 0053332 4 3Ö • HAS BUZ45 33 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1 9 9 1 Package Features TO-204AA BOTTOM VIEW • 9.6A, 50 0V • rDS on = °-6 n _ SOURCE • S O A is P o w e r- D is s ip a tio n Lim ited

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ45A CASE OUTLINE: TO-204AA (TO-3) ENHANCEMENT MODE HIGH VOLTAGE FIELD EFFECT TRANSISTOR

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ45B CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

BUZ45

Contextual Info: , Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUZ45 N-Channel Enhancement-Mode Power Field-Effect Transistors GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: BUZ45B S em iconductor Data Sheet October 1998 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

BUZ45

Contextual Info: Æ 7 SGS-THOMSON M § 0Ä BUZ45 0J(gir (Q [*§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^ D S(on ) *d BUZ45 500 V 0.6 n 9.6 A • HIGH VOLTAGE - FOR OFF-LINE SNIPS • ULTRA FAST SWITCHING FOR OPERATION AT < 10OKHz • EASY DRIVE - FOR REDUCED COST AND

BUZ45

Abstract: IC LA 4127 la 4127
Contextual Info: BUZ45 33 HARRIS N-Channel Enhancem ent-M ode Power Fìeld-E ffect Transistor August 1991 Features Package T0-204AA BOTTOM VIEW • 9 .6A , 5 0 0 V • rDS on = 0 -6 fl SOURCE • S O A is P o w e r-D is sip a tio n Lim ited _ . DRAIN /(FLA N G E) • N a n o s e c o n d S w itch in g S p e e d s

BUZ45A

Contextual Info: / = T SG S -TH O M S O N * 7 M m M § [ R I G J Ï Ï O M O BUZ45A ( g S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss BUZ45A 500 V ^DS(on 0.8 fi •d 8.3 A • HIGH V O LT A G E - FO R OFF-LINE S M P S • U LT R A FAST SW ITCHING FO R O PERATIO N

BUZ45

Abstract: TA17435 transistor BUZ45 Nanosecond N channel MOS FET fet mark fet data fet data book free download harris high power diode 500v
Contextual Info: BUZ45 Semiconductor Data Sheet 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET October 1998 File Number 2257.1 Features • 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate • rDS ON = 0.600Ω (BUZ45) power field effect transistor designed for applications such

buz45

Contextual Info: • _7'12ïï B 3 7 _ G O S ^ G S ■ ^ 3 ^ - 1 3 r = 7 S G S -T H O M S O N ,y i g ra !D (g § * 7Æ, o B U Z 45 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR S G S-THOMSON 3GE TYPE V DSS ^D S(on •d BUZ45 500 V 0.6 Q 9.6 A

TA17425

Abstract: power relay N-channel mosfet BUZ45 transistor BUZ45 TRANSISTOR to 204aa BUZ45A 22581 500V RELAY high power diode 500v TO-204AA transistor
Contextual Info: BUZ45A Semiconductor Data Sheet 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET October 1998 File Number 2258.1 Features • 8.3A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.800Ω (BUZ45 field effect transistor designed for applications such as

Contextual Info: rZ7 SGS-THOMSON ^ 7 # , SMi]0 » llLI(gir»R!lö(gi BUZ45A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ45A 500 V 0.8 n 8.3 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION AT < 100KHz • EASY DRIVE - FOR REDUCED COST AND

BUZ45

Abstract: transistor BUZ45 t03 package transistor pin dimensions IEC134 MC 140 transistor
Contextual Info: PowerMOS transistor ^ OLE D N AMER PHI LIP S/DISCRET E BUZ45 53=131 o a m t .47 T i3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

1N7001

Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90
Contextual Info: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <*typ) (max) (pF) (*typ)

2N6155

Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS