MOSFET 1200V 30A Search Results
MOSFET 1200V 30A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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| TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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| TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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MOSFET 1200V 30A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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800V 40A mosfet
Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
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APTMC60TLM55CT3AG 800V 40A mosfet mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG | |
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Contextual Info: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • • |
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APTMC60TLM55CT3AG | |
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Contextual Info: Preliminary Technical Information IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1200V = 30A ≤ 350mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions |
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IXFN30N120P 300ns OT-227 E153432 30N120P 1-07-A | |
IXFN30N120P
Abstract: diode 1200v 30A 30N120P
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IXFN30N120P 300ns OT-227 E153432 30N120P 4-01-08-C IXFN30N120P diode 1200v 30A | |
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Contextual Info: VDSS ID25 IXFN30N120P PolarTM Power MOSFET HiPerFETTM = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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IXFN30N120P 300ns OT-227 E153432 30N120P 4-01-08-C | |
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Contextual Info: APTMC120TAM33CTPAG VDSS = 1200V RDSon = 33mΩ max @ Tj = 25°C ID = 78A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features |
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APTMC120TAM33CTPAG | |
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Contextual Info: APTM120A15FG Phase leg MOSFET Power Module VDSS = 1200V RDSon = 150mΩ typ @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS • • • • Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features |
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APTM120A15FG performanc00 APTM120A15FGâ | |
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Contextual Info: APTM120A15FG Phase leg MOSFET Power Module VDSS = 1200V RDSon = 150m typ @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS • Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features |
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APTM120A15FG APTM120A15FGâ | |
APTM120A15FG
Abstract: APT0502 APT0601
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APTM120A15FG APTM120A15FG APTM120A15FG APT0502 APT0601 | |
MOSFET 1200v 30aContextual Info: APT12040L2LL 1200V 30A 0.400Ω POWER MOS 7 R MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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APT12040L2LL O-264 MOSFET 1200v 30a | |
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Contextual Info: APT12040L2LL 1200V 30A 0.400Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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APT12040L2LL O-264 | |
APT0406
Abstract: APT0502 APTM120VDA57T3G "VDSS 800V" mosfet
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APTM120VDA57T3G APTM120VDA57T3G APT0406 APT0502 APTM120VDA57T3G "VDSS 800V" mosfet | |
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Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C |
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IXFL30N120P 300ns 30N120P 9-20-07-B | |
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Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFL30N120P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 |
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IXFL30N120P 300ns 30N120P 02-12-10-D | |
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Contextual Info: APTM120VDA57T3G Dual Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 570m typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control Switched Mode Power Supplies Power Factor Correction PFC Interleaved PFC Features |
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APTM120VDA57T3G APTM120VDA57T3Gâ | |
MOSFET 600v 60a
Abstract: APTM120A15F aptm120
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APTM120A15F APTM120A15F MOSFET 600v 60a APTM120A15F aptm120 | |
IXFL30N120P
Abstract: 1200v18a 30N120P 380m
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IXFL30N120P 300ns 30N120P 02-12-10-D IXFL30N120P 1200v18a 380m | |
IXFL30N120P
Abstract: 1200v18a 30N120P
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IXFL30N120P 300ns 30N120P 4-01-08-C IXFL30N120P 1200v18a 30N120P | |
nf950
Abstract: ixFB30N120P 30N120 30N120P
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IXFB30N120P 300ns PLUS264TM 100ms 30N120P 2-12-10-D nf950 ixFB30N120P 30N120 | |
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Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFB30N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 30A Ω 350mΩ 300ns PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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IXFB30N120P 300ns PLUS264TM 100ms 30N120P 2-12-10-D | |
APT12031JLL
Abstract: mosfet 600V 30A MOSFET 1200v 30a APT30DF120
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APT12031JLL OT-227 APT12031JLL mosfet 600V 30A MOSFET 1200v 30a APT30DF120 | |
APT0502
Abstract: APT0601 APTM120DA15G
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APTM120DA15G Sourc00 APTM120DA15G APT0502 APT0601 APTM120DA15G | |
APT12031Contextual Info: APT12031JLL 1200V 30A 0.310Ω R POWER MOS 7 MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel |
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APT12031JLL OT-227 APT12031 | |
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Contextual Info: APTM120DA15G Boost chopper MOSFET Power Module VDSS = 1200V RDSon = 150mΩ typ @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS • • • CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction OUT Features Q2 • G2 S2 0/VBUS |
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APTM120DA15G APTM120DA15Gâ | |