MOSFET 130 N IRF Search Results

9D140

Contextual Info: IRFP 250 VDSS = 200 V ^D cont = 30 A Standard Power MOSFET R DS,on) = 85 m Q N-Channel Enhancement Mode Symbol Test Conditions V ¥ dss T j =25°C to150°C 200 V v T j = 25°Cto150°C; RGS= 1 Mi2 200 V < (/> >8 Continuous ¿20 V v Transient 130 V T c =25°C

Contextual Info: IRFP250A Advanced Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V

Contextual Info: IRFP250A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 32 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V

VUO50

Contextual Info: IRFP250A Advanced Power MOSFET FEATURES B • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 uA M ax. @ ■ V q s 2 = s ^D S(on) =

Contextual Info: IRFS250A Advanced Power MOSFET FEATURES BV dss = 200 V • A valan che Rugged T e ch n o lo g y ■ Rugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^DS on = 0.085 £2 lD = 21.3 A ■ E xtended S afe O pe ra ting A rea

Contextual Info: IRFS250A Advanced Power MOSFET FEATURES BV • A valan che Rugged T e ch n o lo g y ■ Rugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge dss = ^D S o n = lD = ■ E xtended S afe O pe ra ting A rea ■

motor IG 2200 19

Abstract: 2N7228U IRFN450 JANTX2N7228U JANTXV2N7228U
Contextual Info: PD-90418B IRFN450 JANTX2N7228U HEXFET POWER MOSFET JANTXV2N7228U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 500 Volt, 0.415Ω Product Summary Part Number IRFN450 ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power

N-Channel 40V MOSFET 32a

Abstract: IRFP250A
Contextual Info: IRFP250A Advanced Power M O SFET FEATURES B V dss • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n = lD ■ E xtended S afe O pe ra ting A rea ■

IRFP55

Abstract: IRFP256 IRFP255 IRFP551 IRFP254 IRFP257 TG-247 mosfet irfp 250 N
Contextual Info: Rugged Power MOSFETs File Num ber 2289 IRFP254, IRFP255 IRFP256, IRFP257 Avalanche-Energy-Rated N-Channel Power MOSFETs 22 A and 20 A, 275 V and 250 V rDston = 0.14 O and 0.17 Cl N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

IRFS250A

Contextual Info: IRFS250A Advanced Power M O SFET FEATURES B V dss • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n = ID ■ E xtended S afe O pe ra ting A rea ■

MOSFET DRIVER circuits

Contextual Info: PD-90712E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL Part Number RDS(on) ID IRFM350 0.315Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD-90712E POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL Part Number RDS(on) ID IRFM350 0.315Ω 14A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

CG130

Abstract: V/L175C L175C IN 47 46A
Contextual Info: PD - 97035D IRFB4227PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

irfp064 driver circuit

Abstract: IRFP064 IRFP064 APPLICATION ls 7400 SiHFP064
Contextual Info: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

irfp064 driver circuit

Abstract: IRFP064 IRFP064 APPLICATION
Contextual Info: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

1RFP250

Contextual Info: • 4302571 00S4205 IDI ■ HAS IR FP250/251/252/253 IRFP250R/251R/252R /253R Q RHARRIS N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TO -247 TOP VIEW • 27A and 33A, 150V - 200V • i"DS on = 0.085ÍÍ and 0.120ft DRAIN

IRFP256

Abstract: H30E2 IRFP 620 irfp254
Contextual Info: H30E271 0054210 E7T • HAS H a r r is IRFP254, IRFP255 IRFP256, IRFP257 N-Channel Power MOSFETs Avalanche Energy Rated A ug ust 19 9 1 Features Package TO-247 TOP VIEW • 21A and 23A, 250V and 275V • rDS on = 0.14 i l and 0 .1 7ft • Single Pulse Avalanche Energy Rated

cd200

Contextual Info: IRFS240A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V q ss = 2 0 0 v Avalanche Ragged Technology Rugged Gate Oxide Technology Lower input Capacitance improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax. @ VOS = 200V

irfp064

Contextual Info: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFS450 A d van ced Power MOSFET FEATURES B V DSS - 500 V ^ D S o n = 0 .4 Î2 o II ♦ Lower Input Capacitance CT> ♦ Rugged Gate Oxide Technology CD ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRFS450A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^ D S o n = 0 .4 Î2 o II ♦ Lower Input Capacitance CT> ♦ Rugged Gate Oxide Technology CD ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

D1033

Contextual Info: IRFS450A Advanced Power MOSFET FEATURES B V qss • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 p A Max. @ VOS= 500V ■

Contextual Info: IRFR234 A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 0 .4 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD CD Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K

IRFP450A

Contextual Info: IRFP450A A dvanced Power MOSFET FEATURES B V dss = 500 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .4 £ 2 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V