MOSFET P-channel SOT-23
Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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2N7000
2N7002L
MOSFET60
OT-23
BS107,
BS107A
BS108
BS170
NUD3124
NUD3160
MOSFET P-channel SOT-23
NTD80N02
NTD18N06
NTMS3P03R2
MLD1N06CL
NTHD5904N
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Untitled
Abstract: No abstract text available
Text: FDP26N40 N-Channel UniFETTM MOSFET 400 V, 26 A, 160 m Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP26N40
FDP26N40
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB52N20
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Fda18n50
Abstract: No abstract text available
Text: FDA18N50 N-Channel UniFETTM MOSFET 500 V, 19 A, 265 m Features Description • RDS on = 265 m (Max.) @ VGS = 10 V, ID = 9.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA18N50
Fda18n50
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Untitled
Abstract: No abstract text available
Text: FDP26N40 N-Channel UniFETTM MOSFET 400 V, 26 A, 160 mΩ Features Description • RDS on = 130 mΩ (Typ.) @ VGS = 10 V, ID = 13 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP26N40
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FDA18N50
Abstract: No abstract text available
Text: FDA18N50 N-Channel UniFETTM MOSFET 500 V, 19 A, 265 m Features Description • RDS on = 265 m (Max.) @ VGS = 10 V, ID = 9.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA18N50
FDA18N50
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General Semiconductor diode marking 49
Abstract: No abstract text available
Text: FDB52N20 N-Channel UniFETTM MOSFET 500 V, 52 A, 49 m Features Description • RDS on = 49 m (Max.) VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB52N20
FDB52N20
General Semiconductor diode marking 49
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Untitled
Abstract: No abstract text available
Text: FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 m Features Description • RDS on = 49 m (Max.) VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB52N20
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Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
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US6M11
R0039A
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
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US6M11
R0039A
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QS6M4
Abstract: No abstract text available
Text: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.
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J239
Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET
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MRF9002R2/D
MRF9002R2
J239
motorola J122
A113
MRF9002R2
RO4350
mosfet j133
motorola rf Power Transistor
j122 mosfet
J104 MOSFET
J239 mosfet transistor
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motorola rf Power Transistor
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
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MRF9002R2/D
MRF9002R2
MRF9002R2
MRF9002R2/D
motorola rf Power Transistor
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Untitled
Abstract: No abstract text available
Text: FCP260N60E / FCPF260N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 15 A, 260 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing
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FCP260N60E
FCPF260N60E
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Untitled
Abstract: No abstract text available
Text: FQPF47P06 P-Channel QFET MOSFET -60 V, -30 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQPF47P06
FQPF47P06
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FQP55N10
Abstract: No abstract text available
Text: FQP55N10 N-Channel QFET MOSFET 100 V, 55 A, 26 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQP55N10
FQP55N10
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FQP47P06
Abstract: No abstract text available
Text: FQP47P06 P-Channel QFET MOSFET - 60 V, - 47 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQP47P06
FQP47P06
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET TO-263 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF740
O-263
O-220
O-220F
O-220F2
UF740L-TA3-T
UF740G-TA3-T
UF740L-TF2-T
UF740G-TF2-T
UF74at
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Untitled
Abstract: No abstract text available
Text: FQB47P06 / FQI47P06 P-Channel QFET MOSFET -60 V, -47 A, 26 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQB47P06
FQI47P06
FQI47P06
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Untitled
Abstract: No abstract text available
Text: FQPF47P06 / FQPF47P06YDTU P-Channel QFET MOSFET -60 V, -30 A, 26 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQPF47P06
FQPF47P06YDTU
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Untitled
Abstract: No abstract text available
Text: FQB55N10 / FQI55N10 N-Channel QFET MOSFET 100 V, 55 A, 26 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQB55N10
FQI55N10
FQI55N10
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Untitled
Abstract: No abstract text available
Text: FCP260N60E / FCPF260N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 15 A, 260 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing
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FCP260N60E
FCPF260N60E
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 26N50 Preliminary Power MOSFET 26A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 26N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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26N50
26N50
QW-R502-789
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