MOSFET 300A 400V Search Results

MOSFET 300A 400v

Abstract: RHR15060 HA 3089 RHR15040 RHR15050 RHRU15040 RHRU15050 RHRU15060 SINGLE LEAD TO-218 ru15060
Contextual Info: HA RR IS S E N I C O N D S E CT OR b3E D £11 HARRIS U l s E M ' o o . D u c ’ • 4302273, OOMfllS'i tl .2 * H A S R H R U 15040 R H R U 15050, R H R U 15060 0 R PRELIMINARY 150A, 400V - 600V Hyperfast Diode August 1993 Features • Package SINGLE LEAD TO-218 STYLE

bridge rectifier 24V AC to 24v dc

Abstract: 1N5408 smd diodes GSIB1560
Contextual Info: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4

ZVT full bridge

Abstract: diode bridge 8A 220V 220v 25a diode bridge DIODE T25 4 H5 switching power supply 3kw pcb ZVT full bridge for welding 3kw mosfet power supply
Contextual Info: APTLM50H10FRT Phase Shift Operation MOSFET Power Module VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 37A @ Tc = 25°C Application • • • • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies High frequency Power Supply

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF840 MOSFET N-Channel TO-220 FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 1. G 2. D

1038 MOSFET

Contextual Info: SSF22N50A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS= 500V

Contextual Info: SSF22N50A A d van ced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 É 2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRFS460 A d van ced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 É 2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF830 MOSFET N-Channel TO-220 FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 1. G 2. D

Contextual Info: IRFP460 A d van ced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 É 2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 22 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

IRFS460

Abstract: GS 069 HF
Contextual Info: IRFS460 A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

Contextual Info: SSFP9N80 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 800V Simple Drive Requirement ID25 = 7.5A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

IRFS460

Abstract: GS 069 HF
Contextual Info: IRFS460 A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

SSF22N50A

Abstract: GS 069 HF
Contextual Info: SSF22N50A A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

SCS205KG

Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
Contextual Info: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.

500V 25A Mosfet

Abstract: SSH22N50A
Contextual Info: SSH22N50A A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 22 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

HFS730

Abstract: hfs7
Contextual Info: BVDSS = 400 V RDS on typ = 0.8 Ω HFS730 ID = 5.5 A 400V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

irfp460 mosfet

Abstract: MOSFET IRFP460 irfp460 30v IRFP460 DIODE 3d IRFP460 FAIRCHILD
Contextual Info: IRFP460 A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 22 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

HFP730

Contextual Info: BVDSS = 400 V RDS on typ = 0.8 Ω HFP730 ID = 5.5 A 400V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

Contextual Info: APTLM50HM75FRT Phase Shift Operation MOSFET Power Module VDSS = 500V RDSon = 75mΩ Ω max @ Tj = 25°C ID = 43A @ Tc = 25°C Application • • • • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies High frequency Power Supply

SSH22N50A

Contextual Info: SSH22N50A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS on = 0.25 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 22 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 µA (Max.) @ VDS = 500V

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF830 MOSFET N-Channel TO-220 1. G FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 2. D

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF830 MOSFET N-Channel TO-220 1. G FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 2. D

IRFB830

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263 Plastic-Encapsulate MOSFETS IRFB830 MOSFET N-Channel TO-263 1. G FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 2. D

Contextual Info: s TAIWAN TSM1N50 SEMICONDUCTOR 500V N-Channel Power MOSFET bl RoHS C O M P L IA N C E PRODUCT SUMMARY Pin D efinition; 1. G ate 2. Drain 3. S ou rce Vos V RüS(on){ß) 500 5.5 @ V«s =10V Id (A) 0.5 1 23 General Description The TSM1N50 is used an advanced termination scheme to provide enhanced voltage-blocking capability without