MOSFET 355 Search Results

Contextual Info: FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Max.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: Data Sheet 4V Drive Nch + Pch MOSFET QS8M51  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8).

Contextual Info: FDA20N50_F109 N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Max.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: Data Sheet 4V Drive Nch + Pch MOSFET QS8M51  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8).

Contextual Info: QS8M51 Data Sheet 4V Drive Nch + Pch MOSFET QS8M51  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8).

f 948

Abstract: TOP 948 f948
Contextual Info: FC-36A 5.5 x 5 mm MOSFET BGA Tape and Reel Dimensions FC-36A MOSFET BGA Packaging Configuration: Figure 1 F63TNR Label Packaging Description: Antistatic Cover Tape FC-36A MOSFET BGA parts are shipped in tape. The carrier tape is made from a dissipative carbon filled

Contextual Info: FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features Description • RDS on = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

AN2386

Abstract: Atlas silvaco 14047 silvaco
Contextual Info: AN2386 Application note How to achieve the threshold voltage thermal coefficient of the MOSFET acting on design parameters Introduction Today, the MOSFET devices are used mainly as switches in electronic circuits. In such operational conditions, the MOSFET device works in switch on and switch off modes.

Contextual Info: FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 m Features Description • RDS on = 230 m (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65Z-E Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65Z-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: FCH041N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 77 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

AT 30B

Abstract: FC-30B 942b F942B
Contextual Info: FC-30B 3.5 x 4 mm MOSFET BGA Tape and Reel Dimensions FC-30B MOSFET BGA Packaging Configuration: Figure 1 F63TNR Label Packaging Description: FC-30B MOSFET BGA parts are shipped in tape. The carrier tape if made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film

FCH041N65F

Contextual Info: FCH041N65F N-Channel SuperFET II FRFET® MOSFET 650 V, 76 A, 41 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

G3VM-355JR

Abstract: G3VM-355J relay omron 5 pin g3vm355jr MOSFET A5
Contextual Info: Omron A5 Catalogue 2006 295-430 14/10/05 10:09 am Page 428 MOSFET Relay – G3VM-355J/JR New MOSFET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single SOP Package. General-purpose Series Added. • SPST-NO/SPST-NC models with an 8-pin SOP

uc3854 3kw pfc

Abstract: uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854
Contextual Info: APPLICATION NOTE APT9901 By: Kenneth Dierberger Denis Grafham OPTIMIZING THE DESIGN OF 3.5kW SINGLE-MOSFET POWER FACTOR CORRECTORS 1 APT9901 Optimizing The Design of 3.5kW Single-MOSFET Power Factor Correctors Kenneth Dierberger, Technical Marketing Manager

d marking code dpak transistor

Abstract: d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD3580 FDD6680 FDU3580
Contextual Info: FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Contextual Info: FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Contextual Info: FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Contextual Info: Si4416DY* Single N-Channel MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4450DY

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Contextual Info: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

fdfs6n303

Abstract: 6n303 L86Z SOIC-16 F011 F63TNR F852
Contextual Info: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.

N2357D

Abstract: N2357
Contextual Info: ISL9N2357D3ST Data Sheet 30V, 0.007 Ohm, 35A, N-Channel DenseTrench Power MOSFET March 2001 File Number 4929.1 DenseTrench™ [ /Title DenseTrench from Intersil is a new advanced MOSFET technology that achieves the lowest possible on-resistance Features

FCH041N60E

Contextual Info: SuperFET II FCH041N60E N-Channel MOSFET Features Description ® The SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

CBVK741B019

Abstract: F63TNR FDD2512 FDD6680 marking 300 to252
Contextual Info: FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature