MOSFET 3F Search Results

a4940klp

Contextual Info: A4940 Automotive Full Bridge MOSFET Driver Features and Benefits Description High current gate drive for N-channel MOSFET full bridge Independent control of each MOSFET Charge pump for low supply voltage operation Cross-conduction protection with adjustable dead time

200 Amp bridge mosfet

Abstract: a4940 A4940KLPTR-T series connection of mosfet brush DC Motor control fast high side mosfet driver IPC7351 JESD51-5
Contextual Info: A4940 Automotive Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time

200 Amp bridge mosfet

Abstract: a4940 A4940KLPTR-T A4940KLPTR A4940-DS brush DC Motor control fast high side mosfet driver MOSFET ESD Rated series connection of mosfet IPC7351
Contextual Info: A4940 Automotive Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time

brush DC Motor control

Abstract: full bridge mosfet A4957 a4957s A495 QFN50 A4957SESTR-T full bridge mosfet driver dynamic braking unit schematic diagram
Contextual Info: A4957 Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time

brush DC Motor control

Abstract: full bridge mosfet
Contextual Info: A4957 Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time

A4940

Abstract: brush DC Motor control A4940KLPTR-T application note gate driver for h bridge mosfet
Contextual Info: A4940 Automotive Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time

1803 5a

Contextual Info: Preliminary – Subject to change without notice Complementary NP-Channel Trench MOSFET 20V General Description Features The MDS9331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.

MDS9753E

Abstract: Power MOSFET SO-8 Complementary N-P channel N-P Channel mosfet
Contextual Info: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9753E uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability.

MagnaChip Semiconductor

Abstract: 0342F
Contextual Info: Preliminary – Subject to change without notice Single N-Channel Trench MOSFET 20V, 7.3A, 23mΩ Ω General Description Features The MDH1331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance

MDS9651

Abstract: N-P Channel mosfet Power MOSFET SO-8 Complementary N-P channel
Contextual Info: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability

Contextual Info: Preliminary – Subject to change without notice Single N-Channel Trench MOSFET 30V, 13A, 6.6mΩ Ω General Description Features The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance

0342F

Abstract: MAGNACHIP MDS7331 trench mosfet
Contextual Info: Preliminary – Subject to change without notice Dual P-Channel Trench MOSFET 20V, 3.8A General Description Features The MDS7331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.

Contextual Info: Preliminary – Subject to change without notice Single N-Channel Trench MOSFET 30V, 11.6A, 14mΩ Ω General Description Features The MDS1651 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance

MDD1754

Abstract: MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs
Contextual Info: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V

MDD3754

Abstract: MDD*3754 MDD375 P-channel Trench MOSFET trench mosfet magnachip .MDD3754 48m TO-252 TW18
Contextual Info: Preliminary – Subject to change without notice P-Channel Trench MOSFET, -40V, -12A, 48mΩ General Description Features The MDD3754 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent

MDE1752

Abstract: MDE1752R MAGNACHIP trench mosfet MDE1752T 40V, 50A n mosfet FEB2008 40V50A TW18
Contextual Info: Preliminary – Subject to change without notice N-Channel Trench MOSFET 40V, 66A, 8.5mΩ General Description Features The MDE1752 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability

Contextual Info: Preliminary – Subject to change without notice N-Channel Trench MOSFET 40V, 50A, 8.5mΩ General Description Features The MDD1752 uses advanced Magnachip’s MOSFET Technology, which provide low onstate resistance, high switching performance and excellent reliability

MDS3754

Abstract: MDS3754RH P-Channel mosfet 40V P-channel Trench MOSFET
Contextual Info: P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ General Description Features The MDS3754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = -40V ID = -6.0 @ VGS = -10V

MDH3331

Abstract: P-channel Trench MOSFET MagnaChip Semiconductor MOSFET dynamic
Contextual Info: Preliminary – Subject to change without notice P-Channel Trench MOSFET 20V, 3.8A, 70mΩ General Description Features The MDH3331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.

Contextual Info: Preliminary – Subject to change without notice N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description Features The MDS1656 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.

Contextual Info: Preliminary – Subject to change without notice P-Channel Trench MOSFET -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent

MDD9754

Abstract: MDD-9754
Contextual Info: Preliminary – Subject to change without notice Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDD9754 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability

Contextual Info: Preliminary – Subject to change without notice N-Channel Trench MOSFET, 40V, 16A, 30mΩ General Description Features The MDD1754 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and exellent reliability.

MAGNACHIP

Abstract: MDP9N50 mosfet 500v 6903 n-channel 250V power mosfet N-Channel mosfet 400v to220
Contextual Info: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description Features The MDP9N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.