MOSFET 600V LOGIC LEVEL Search Results

SSS5N60A

Abstract: data sheet for mosfet sss5n60a logic gate sss5n60
Contextual Info: SSS5N60A Advanced Power MOSFET FEATURES BVDSS = 600 V ! Logic Level Gate Drive RDS on = 2.2Ω ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ID = 2.6 A ! Lower Input Capacitance ! Improved Gate Charge TO-220F ! Extended Safe Operating Area ! Lower Leakage Current : 25 A (Max.) @ VDS = 600V

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,

igbt full h bridge 25A

Abstract: 400V igbt dc to dc buck converter 600V igbt dc to dc buck converter
Contextual Info: AMG-DF102 Full Bridge MOSFET/IGBT Driver up to 600V 1. Functional Description of the AMG-DF102 The AMG-DF102 is a high voltage MOSFET and IGBT full bridge IC with corresponding high and low side channels, and automatic dead time insertion. It also has an additional driver in

IRS21962S

Abstract: IRS21962SPBF JESD22-A115 JESD78 IRS21962STRPBF
Contextual Info: Datasheet No – PD97383 March 17, 2009 IRS21962S Dual channel high-side drivers with floating input Features • • • • • • Two independent high side output channels CMOS Schmitt trigger inputs with pull down resistor 5V compatible logic level inputs

Contextual Info: Datasheet No – PD97383 March 17, 2009 IRS21962S Dual channel high-side drivers with floating input Features • • • • • • Two independent high side output channels CMOS Schmitt trigger inputs with pull down resistor 5V compatible logic level inputs

Contextual Info: AMG-DF102 MOSFET and IGBT Full Bridge Driver up to 600V 1. Functional Description of the AMG-DF102 The AMG-DF102 is a high voltage MOSFET and IGBT driver IC with two dependent high and low side output channels for Full-Bridge applications. The AMG-DF102 has an additional

600V igbt dc to dc buck converter

Abstract: diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent
Contextual Info: Highly Integrated Off-Line Power Switch 1 The FS6X1220RT Fairchild Power Switch FPS is a highly integrated offline power switch for DC/DC forward or fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (200V minimum

IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.

circuit diagram of mosfet based smps power supply

Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
Contextual Info: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control www.fairchildsemi.com/whats_new/fdc6901l_nph.html The FDC6901L is a one-of-a-kind power switch integrating an advanced Trench technology P-Channel MOSFET with a slew rate controller IC. The

Contextual Info: INTERNATIONAL RECTIFIER bSE D • M Ö S S 4S 2 0 D 1 Ö 21 4 b41 ■ INR Provisional Data Sheet P D -6.0 26 INTERNATIONAL RECTIFIER I « R POWER MOSFET/IGBT GATE DRIVER IR2112 General Description Features The IR2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high

IR2113 APPLICATION NOTE

Abstract: IR2113 16 pin
Contextual Info: INTERNATIONAL RECTIFIER bSE î • 4Ö55M52 GCUÖ2G2 TET ■ INR Data Sheet No. PD-6.021 INTERNATIONAL. RECTIFIER HIGH VOLTAGE MOS GATE DRIVER IRS113 General Description Features The IR2113 is a high voltage, high speed MOSgated power device driver with independent high side

2n60p

Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond

speed control of induction motor by using scr

Abstract: 12v dc motor speed controller using igbt pwm speed control of 3 phase induction motor by using scr speed control of 1 phase induction motor by using scr universal MOTOR speed control using scr selni universal MOTOR SPEED CONTROL USING IGBT 500w pwm DC motor controller selni universal motor induction motor speed control with scr
Contextual Info: Motor control A reference guide www.st.com Contents Introduction 4 Product family highlights 4 Universal motor 6 Brush DC motor 8 Single-phase induction motor 10 Three-phase induction motor 12 Three-phase brushless DC motor 14 Stepper motor 16 Switched reluctance motor

IX2127

Abstract: DS-IX2127-R01 EIA-481-2 VB-12 FLUORESCENT ballast 12v
Contextual Info: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

IR2117

Abstract: igbt driver IR2117 IR2118 IR2117S IR2118S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60146-J
Contextual Info: Preliminary Data Sheet No. PD60146-J IR2117/IR2118 S SINGLE CHANNEL DRIVER Features • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

IR2181 application notes

Abstract: IR2181 IR21814 IR2182 IR21814S IR2181S MS-012AA 14-Lead SOIC IR21814S PD-60172-A CL 2181
Contextual Info: Preliminary Data Sheet No. PD-60172-A IR2181/IR21814 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Product Summary Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

ir2101 datasheet

Abstract: IR2101 IR2101 AN IR2101S MP150 B3 ho transistor
Contextual Info: Data Sheet No. PD-6.043C IR2101 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout

IR2101

Abstract: ir2101 datasheet IR2101 AN IR2101S MP150 silicon rectifier data manual
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.043C IR2101 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V

mosfet 600V logic level

Abstract: IR2181 IR2181 application notes IR21814S IR2181S CL 2181 ir21814 IR2182 MS-012AA voltage level shifter 0V to 5V
Contextual Info: Preliminary Data Sheet No. PD-60172-B IR2181 S IR21814(S) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Product Summary Fully operational to +600V Tolerant to negative transient voltage

Contextual Info: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift

IGBT Designers Manual

Abstract: 044C IR2102 IR2102S MP150 mosfet 600V logic level
Contextual Info: Data Sheet No. PD-6.044C IR2102 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout

IR2122

Abstract: IR2122S 600V Current Sensing N-Channel IGBT 600V IGBT Current Sensing Channel Driver
Contextual Info: Preliminary Data Sheet No. PD60130-I IR2122 S CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

Contextual Info: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift