MOSFET 6718 Search Results
MOSFET 6718 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK422G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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MOSFET 6718 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si5997DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQM200N04-1m8 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0018 ID (A) • 100 % Rg and UIS Tested |
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SQM200N04-1m8 AEC-Q101 O-263-7L O-263-7L SQM200N04-1m8-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SQM200N04-1m8 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0018 ID (A) • 100 % Rg and UIS Tested |
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SQM200N04-1m8 AEC-Q101 O-263-7L SQM200N04-1m8-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SQM200N04-1m8 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0018 ID (A) • 100 % Rg and UIS Tested |
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SQM200N04-1m8 AEC-Q101 O-263-7L SQM200N04-1m8-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si5997DU 2002/95/EC Si5997trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si5997DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si5997DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si5997DU
Abstract: si5997
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Si5997DU 2002/95/EC Si5997hay 11-Mar-11 si5997 | |
Contextual Info: Si5997DU Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 6a 0.088 at VGS = - 4.5 V - 6a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si5997DU 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SQM200N04-1m8Contextual Info: SQM200N04-1m8 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0018 ID (A) • 100 % Rg and UIS Tested |
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SQM200N04-1m8 AEC-Q101 O-263-7L O-263-7L SQM200N04-1m8-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQM200N04-1m8 | |
Contextual Info: SQM200N04-1m3L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0011 RDS(on) () at VGS = 4.5 V 0.0013 ID (A) • Package with Low Thermal Resistance |
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SQM200N04-1m3L AEC-Q101 O-263-7L O-263-7L SQM200N04-1m3L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4447ADY 2002/95/EC Si4447ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4447ADY 2002/95/EC Si4447ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4447ADY 2002/95/EC Si4447ADY-T1-GE3 11-Mar-11 | |
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si4447adyContextual Info: New Product Si4447ADY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.045 at VGS = - 10 V - 7.2 0.062 at VGS = - 4.5 V - 6.1 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4447ADY 2002/95/EC Si4447ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
KSZ8041
Abstract: LM2576 MTBF vcsel spice model MIC4129 mic44r22 ksz8692 MICREL MIC marking DFB laser diode spice model KSZ9021RLI KSZ8041TLI
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Mil-Std-883B M0014-051409 KSZ8041 LM2576 MTBF vcsel spice model MIC4129 mic44r22 ksz8692 MICREL MIC marking DFB laser diode spice model KSZ9021RLI KSZ8041TLI | |
210208Contextual Info: SiA444DJT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SiA444DJT AN609, 0527u 5148m 3910m 2072m 8426u 2220u 1927m 210208 | |
Contextual Info: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si4202DY AN609, 2175m 2923m 2439m 3089u 1542m 7069m 8017m | |
Contextual Info: SiA450DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SiA450DJ AN609, 9999u 0841m 9107m 5440m 1720u 3046u 4369m | |
Contextual Info: Si8469DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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Si8469DB AN609, 9755u 4849u 0393m 1634m 0148u 1583m 6626m 19-Oct-10 | |
KSZ8692
Abstract: 27mhz rf amplifier MOSFET to220 SMD transistor 2x sot 23 27mhz remote control transmitter circuit PQFP-128 footprint KSZ8851SNL MICRF213 MILLITECH 6822 TRANSISTOR Schottky-diode 8230
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M0009-012809 KSZ8692 27mhz rf amplifier MOSFET to220 SMD transistor 2x sot 23 27mhz remote control transmitter circuit PQFP-128 footprint KSZ8851SNL MICRF213 MILLITECH 6822 TRANSISTOR Schottky-diode 8230 | |
str f 6267
Abstract: SMD MOSFET DRIVE DATASHEET 4606 STR 6656 TRANSISTOR C 6090 8050 sot-23 STR 6267 str 6267 f scr ky 202 HALL SOT-23-4 mosfet 4800
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M0009-021506 str f 6267 SMD MOSFET DRIVE DATASHEET 4606 STR 6656 TRANSISTOR C 6090 8050 sot-23 STR 6267 str 6267 f scr ky 202 HALL SOT-23-4 mosfet 4800 | |
SOP8 8002 Amplifier
Abstract: SCR s838 TRANSISTOR s838 4606 MOSFET INVERTER transistor SMD DK QB Marking Code SMD CM sot-23-5 4606 inverter reg EL34 SMD MOSFET DRIVE DATASHEET 4606 voltage regulator SOT-223-4 C5 87
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TinyFE81090 M-0009 SOP8 8002 Amplifier SCR s838 TRANSISTOR s838 4606 MOSFET INVERTER transistor SMD DK QB Marking Code SMD CM sot-23-5 4606 inverter reg EL34 SMD MOSFET DRIVE DATASHEET 4606 voltage regulator SOT-223-4 C5 87 | |
LD33 VOLTAGE REGULATOR
Abstract: LD33 VOLTAGE REGULATOR 3.3v NIKKO NR 9600 LD33 regulator TRANSISTOR si 6822 LD50 VOLTAGE REGULATOR st LD33 smd code marking ld33 LD33 VOLTAGE REGULATOR ST ld33 st
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Tiny0240 M0009-012804 LD33 VOLTAGE REGULATOR LD33 VOLTAGE REGULATOR 3.3v NIKKO NR 9600 LD33 regulator TRANSISTOR si 6822 LD50 VOLTAGE REGULATOR st LD33 smd code marking ld33 LD33 VOLTAGE REGULATOR ST ld33 st |