MOSFET 700V 2A Search Results

Contextual Info: HY2N70T / HY2N70FT 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS ON =6.5W@VGS=10V, ID=1A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current

4N70F

Contextual Info: HY4N70T / HY4N70FT 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS ON =2.8W@VGS=10V, ID=2A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY2N70D / HY2N70M 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=6.5W@VGS=10V, ID=1A

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A

2N70M

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY2N70D / HY2N70M 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=6.5W@VGS=10V, ID=1A

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY4N70D / HY4N70M 700V / 4A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=2.8W@VGS=10V, ID=2A

Contextual Info: MITSUBISHI Neh POWER MOSFET I j FS2UM-14A ! HIGH-SPEED SWITCHING USE FS2UM-14A • VDSS . -700V • rDS ON (MAX) . 9.75Í2 • I D . 2A

U2N70

Contextual Info: PJF2N70 / PJU2N70 700V N-Channel Enhancement Mode MOSFET ITO-220AB/TO-251 FEATURES ITO-220AB • 700V, RDS ON =5.5Ω@VGS=10V, ID=2A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N70ZL Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N70ZL is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N70Z Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N70Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N70K-MT Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70K-MT is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

FS5KM-14A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5KM-14A HIGH-SPEED SWITCHING USE FS5KM-14A OUTLINE DRAWING Dimensions in mm 10 ± 0 . 3 • VDSS . 700V .2.6Q

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N70-CB Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N70-CB is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This

1A 700V MOSFET

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2KM-14A HIGH-SPEED SWITCHING USE FS2KM-14A • Voss OUTLINE DRAWING . Dimensions in mm 700V • rDS ON (MAX) . 9 .7 5 Q

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

SVD2N70

Contextual Info: SVD2N70M/SVD2N70F 2A, 700V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-S Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7NM70 Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7NM70 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

FS5KM14A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5KM-14A HIGH-SPEED SWITCHING USE FS5KM-14A OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 V d s s . 700V rDS ON (MAX) . 2.6Í1

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2UM-14A HIGH-SPEED SWITCHING USE FS2UM-14A OUTLINE DRAWING Dimensions in mm 4.5 1.3 LU U LU qwe 0 ' q w e r q O- ' V dss . . 700V . 9.75Í1

n channel 700V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5SM-14A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 3.2 hf 5.45 5.45 jbd i 0.6 bdl Qi V d s s . 700V rDS ON (MAX) . 2.6Í1

Contextual Info: MITSUBISHI Neh POWER MOSFET FS2KM-14A HIGH-SPEED SWITCHING USE FS2KM-14A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2 .8 ± 0 . 2 V d s s . 700V rDS ON (MAX) . 9.75Í1

FS2VS-14A mosfet

Abstract: FS2VS-14A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE FS2VS-14A OUTLINE DRAWING L q Dimensions in mm J w e •V o +i CD O w r ' V dss . . 700V ' rDS ON (MAX) .9.75Q ' I d . .2A oi q w e

POWER MOSFET 4600

Abstract: 1A 700V MOSFET
Contextual Info: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.