MOSFET 847 Search Results

IXDD 614

Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
Contextual Info: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers

eft 317 transistor

Abstract: NUD3160 636 MOSFET TRANSISTOR MDC3105 SGD525 datasheet relay 346 766 IEC61000-4-4 MDC3105D NUD3105 Distributors and Sales Partners
Contextual Info: 5 V Relay Driver Socket 12 V Relay Driver Socket Bipolar Relay Driver Socket - NUD3105 MOSFET Relay Driver Socket - NUD3112 Water Valve Relay Vibrator Motor Microprocessor Microprocessor 24 V Relay Driver Socket MOSFET Relay Driver Socket - NUD3124 Window

Contextual Info: SC420A TM High Speed, Combi-Sense , Synchronous Power MOSFET Driver for Mobile Applications POWER MANAGEMENT Description Features The SC420A is a cost effective Dual MOSFET Driver, incorporating Semtech’s patented Combi-SenseTM technology, designed for switching High and Low side Power

5252 F mosfet

Abstract: TLP220
Contextual Info: New Product Guide 350-V Withstanding Voltage Low-Cost Photorelays NEW PRODUCT GUIDE TLP220 Series of Photorelays features a 350-V withstanding voltage and incorporates normally open MOSFET. This Series is modification of the incorporated MOSFET chip of conventional TLP227G Series

1N4148

Abstract: J-STD-020B SC1403 SC420 SC420A SC420AIMLTRT
Contextual Info: SC420A TM High Speed, Combi-Sense , Synchronous Power MOSFET Driver for Mobile Applications POWER MANAGEMENT Description Features The SC420A is a cost effective Dual MOSFET Driver, incorporating Semtech’s patented Combi-SenseTM technology, designed for switching High and Low side Power

DS1608C-472

Abstract: LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY transistor CB 308 bd 3451
Contextual Info: LT4351 MOSFET Diode-OR Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET

f12 mosfet

Abstract: LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY ceramic capacitor, .1uF diode lt 246
Contextual Info: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies n External N-Channel MOSFETs for High Current Capability n Internal Boost Regulator Supply for MOSFET Gate Drive n Wide Input Range: 1.2V to 18V

transistor CB 308

Abstract: SCHEMATIC DIAGRAM monitor adapter 12v 5A bd 2003 fast charge battery 410k
Contextual Info: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies n External N-Channel MOSFETs for High Current Capability n Internal Boost Regulator Supply for MOSFET Gate Drive n Wide Input Range: 1.2V to 18V

MBR0530

Abstract: bd 2003 fast charge battery diode led uv DS1608C-472 LT4351 LT4351CMS LT4351IMS Si4862DY
Contextual Info: LT4351 MOSFET Diode-OR Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET

tlp250 application note

Abstract: tlp250 tlp2501 TLP250 application igbt drive tlp250 TLP251
Contextual Info: IGBT/Power MOSFET Gate Drive Photo-IC Couplers TLP250 INV /TLP250F(INV) NEW PRODUCT GUIDE IGBT / POWER MOSFET GATE DRIVE PHOTO-IC COUPLERS TLP250 (INV) / TLP250F (INV) The Toshiba TLP250 (INV) and TLP250F (INV) are 8-pin photocouplers designed exclusively for use in IGBT

NPC-1200

Abstract: 1N4007 diode PIV rating NPC1200 equivalent transformer egston AND8023 MBRA140LT3 npc1200 2n2222 spice model flyback transformer eldor footprint for transformer in orcad
Contextual Info: AND8023/D Implementing the NCP1200 in Low-Cost AC/DC Converters Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE S External MOSFET connection: by leaving the external MOSFET external to the IC, you can select avalanche proof devices which, in certain cases e.g. low output

Contextual Info: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES n n n n n n n n n Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET Gate Drive Wide Input Range: 1.2V to 18V

JESD22-A115

Abstract: 3C225
Contextual Info: LF PA K PSMN3R2-25YLC N-channel 25 V 3.4 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

Contextual Info: TO -22 0A B PSMN3R3-80PS N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220 Rev. 1 — 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is

Contextual Info: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES n n n n n n n n n Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET Gate Drive Wide Input Range: 1.2V to 18V

PSMN3R5-80PS,127

Contextual Info: TO -22 0A B PSMN3R5-80PS N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 Rev. 01 — 28 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is

175C

Contextual Info: TO -22 0A B PSMN3R5-80PS N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 Rev. 02 — 4 March 2011 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is

SMD diode s13

Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 VDS (V) - 20 TrenchFET Power MOSFET Typical ESD Protection: 3000 V Gate-Source OVP Material categorization:

LTC4357

Abstract: LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY
Contextual Info: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES n n n n n n n n n Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies External N-Channel MOSFETs for High Current Capability Internal Boost Regulator Supply for MOSFET Gate Drive Wide Input Range: 1.2V to 18V

si84

Abstract: si8475
Contextual Info: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3

Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si8473

Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET