MOSFET 923 54 Search Results
MOSFET 923 54 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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MOSFET 923 54 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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g419
Abstract: G-424 g424 lg diode 923 TC1602e 384F IRFF130 IRFF9230 IRFF9231 IRFF9232
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OCR Scan |
T-39-19 IRFFS230 IRFF9233 G-424 g419 G-424 g424 lg diode 923 TC1602e 384F IRFF130 IRFF9230 IRFF9231 IRFF9232 | |
Contextual Info: Preliminary Technical Information TrenchTM Power MOSFET Common-Gate Pair IXTL2x180N10T VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions |
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IXTL2x180N10T 2x100A 338B2 | |
Contextual Info: Preliminary Technical Information IXTL2x18010T TrenchTM Power MOSFET Common-Gate Pair VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions |
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IXTL2x18010T 2x100A 338B2 | |
Contextual Info: Preliminary Technical Information IXTL2x180N10T TrenchTM Power MOSFET Common-Gate Pair VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions |
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IXTL2x180N10T 2x100A 338B2 | |
MOSFET 923 54
Abstract: N06L vq3001 quad N-Channel MOSFET dip package 40v N- and P-Channel dip
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OCR Scan |
TQ3001 VQ3001 VQ7254 14-Pin VQ3001N6 VQ7254N6 TQ3001N7 250mA VQ7254 MOSFET 923 54 N06L quad N-Channel MOSFET dip package 40v N- and P-Channel dip | |
offline UPS
Abstract: MOSFET 923 54 IXTL2x180N10T
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IXTL2x180N10T 2x100 405B2 offline UPS MOSFET 923 54 IXTL2x180N10T | |
TQ3001
Abstract: TQ3001N7 VQ3001 VQ3001N6 VQ7254 VQ7254N6
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TQ3001 VQ3001 VQ7254 14-Pin VQ3001N6 TQ3001N7 VQ7254N6 TQ3001 TQ3001N7 VQ3001 VQ3001N6 VQ7254 VQ7254N6 | |
KY 719
Abstract: 122JK TB163TK TB143TK
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OCR Scan |
2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103 2SA1036K 2SA1037AK 2SA1037AKLN 2SA1455K RU101 KY 719 122JK TB163TK TB143TK | |
Contextual Info: TrenchMVTM Power MOSFET IXTA180N10T IXTP180N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 180A Ω ≤ 6.4mΩ TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSM |
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IXTA180N10T IXTP180N10T O-263 062in. 180N10T 2-02-07-B | |
180N10TContextual Info: PreliminaryTechnical Information TrenchMVTM Power MOSFET IXTA180N10T7 VDSS ID25 RDS on = 100 V = 180 A Ω ≤ 6.4 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ |
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IXTA180N10T7 180N10T 1-20-06-A 180N10T | |
AIR FLOW DETECTOR
Abstract: smd transistor 351A hall 503 911 smd transistor A6t SENSOR PBT gf 35 G5V2 5V Hall Sensor 13A 439 omron relay 12v dc g8sn D6F-02A-110 dielectric tester dc
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UL94V-0 XF2E-0515-1 XFE-1015-1 XF2E-0615-1 XFE-1215-1 XF2E-0715-1 XFE-1515-1 XF2H-0815-1 XFE-1715-1 AIR FLOW DETECTOR smd transistor 351A hall 503 911 smd transistor A6t SENSOR PBT gf 35 G5V2 5V Hall Sensor 13A 439 omron relay 12v dc g8sn D6F-02A-110 dielectric tester dc | |
IXTA180n10t
Abstract: IXTP*80N10T IXTA180N10 ixtp180n10t 180N10T T180N
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IXTA180N10T IXTP180N10T O-263 062in. 180N10T 2-02-07-B IXTA180n10t IXTP*80N10T IXTA180N10 ixtp180n10t T180N | |
Contextual Info: PreliminaryTechnical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA180N10T7 RDS on = 100 V = 180 A Ω ≤ 6.4 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ |
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IXTA180N10T7 O-263 180N10T 1-20-06-A | |
Contextual Info: Advanced Power Electronics Corp. APE8935 ULTRA- LOW ON RESISTANCE, 6A LOAD SWITCH WITH CONTROLLED TURN-ON FEATURES DESCRIPTION ▓ Integrated 6A Single Channel Load Switch The APE8935 is a small, ultra-low RON load switch ▓ Input Voltage Range: 0.8V to 5.5V |
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APE8935 APE8935 8935GN3 | |
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IXTH180N10T
Abstract: 180N10T IXTQ180N10T
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IXTH180N10T IXTQ180N10T O-247 180N10T 1-20-06-A IXTH180N10T 180N10T IXTQ180N10T | |
ixtp180n10t
Abstract: IXTA180N10T IXTP*80N10T
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IXTA180N10T IXTP180N10T O-263 O-220) O-263 O-220 180N10T ixtp180n10t IXTP*80N10T | |
smd marking 911 zener
Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
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M5263B, ZMM5264B, ZMM5265B, ZMM5266B, ZMM5267B, ZMM56, ZMM62, ZMM68, ZMM75, smd marking 911 zener d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt | |
Contextual Info: Quasi-Resonant Controllers with Integrated Power MOSFET STR-Y6700 Series General Descriptions Package The STR-Y6700 series are power ICs for switching power supplies, incorporating a MOSFET and a quasi-resonant controller IC. Including an auto standby function in the controller, |
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STR-Y6700 O220F-7L | |
LM 4088 relay
Abstract: IC LM 393 N hall 503 911 smd transistor A6t smd transistor 351A smd a6t double diode SX4009-P1 914 Battery Protection IC G2RL G8HN ic 4081 datasheet
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relay omron G2E
Abstract: MOSFET 831 63 ng IR 944 triac Solid State Micro Technology EY3A-112 omron components catalogue automotive relay OMRON DIP switch relay cross reference G3MC OMRON RELAY G6Y Cross Reference
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omron components catalogue automotive relay
Abstract: omron MY 4N relay RL 782 relay relay 4088 6V mosfet ss 544 relay omron G2E 824 mosfet Photo MOS Relay RELAY 4088 G3VM-401A
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SBMT2222A
Abstract: Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A
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OCR Scan |
100ic OT-143 OT-143 KTY13B OT-23 OT-23 KSY13 SBMT2222A Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 | |
2N6284 inverter schematic diagram
Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
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SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F |