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    MOSFET DATA Search Results

    MOSFET DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET DATA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


    Original     		PDF 2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N

    Untitled

    Abstract: No abstract text available
    Text: 10-FZ06NBA084FP-M306L48 preliminary datasheet Switching Definitions INPUT BOOST MOSFET+IGBT General conditions = 125 °C Tj = 4Ω Rgon IGBT Rgoff IGBT = 4Ω INPUT BOOST MOSFET+IGBT Figure 1 MOSFET turn off delayed by 100ns INPUT BOOST MOSFET+IGBT Figure 2


    Original     		PDF 10-FZ06NBA084FP-M306L48 100ns VGE10% Tjmax-25Â 00V/84A

    Untitled

    Abstract: No abstract text available
    Text: tSENSITRON SPM6M050-010D SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED MOSFET Characteristics CHARACTERISTIC SYMBOL


    Original     		PDF SPM6M050-010D

    SPM6M050-010D

    Abstract: No abstract text available
    Text: SPM6M050-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY A Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED MOSFET Characteristics CHARACTERISTIC SYMBOL


    Original     		PDF SPM6M050-010D SPM6M050-010D

    adaptive deadtime driver

    Abstract: DFN10 JESD97 L6743 L6743Q L6743QTR L6743TR schematic diagram 12v power supply st diode cross reference
    Text: L6743, L6743Q High current MOSFET driver Data Brief Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ Integrated bootstrap diode ■ High frequency operation ■ Enable pin


    Original     		PDF L6743, L6743Q DFN10 adaptive deadtime driver JESD97 L6743 L6743Q L6743QTR L6743TR schematic diagram 12v power supply st diode cross reference

    adaptive deadtime driver

    Abstract: st diode cross reference
    Text: L6743, L6743Q High current MOSFET driver Data Brief Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ Integrated bootstrap diode ■ High frequency operation ■ Enable pin


    Original     		PDF L6743, L6743Q DFN10 L6743Q L6743QTR adaptive deadtime driver st diode cross reference

    IEC60747-8

    Abstract: AN11158 nxp mosfet soa derating AN10273 iec60134
    Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 2 — 16 August 2012 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors


    Original     		PDF AN11158 AN11158 IEC60747-8 nxp mosfet soa derating AN10273 iec60134

    adaptive deadtime driver

    Abstract: ST MOSFET DCDC DFN10 High Current Low Side Driver ST High Current MOSFET Driver st diode cross reference dual mosfet 3X3 package
    Text: L6743, L6743Q High current MOSFET driver Data Brief Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ Integrated bootstrap diode ■ High frequency operation ■ Enable pin


    Original     		PDF L6743, L6743Q DFN10 L6743Q L6743 L6743TR adaptive deadtime driver ST MOSFET DCDC DFN10 High Current Low Side Driver ST High Current MOSFET Driver st diode cross reference dual mosfet 3X3 package

    transistor irf510

    Abstract: irf510 IRF510 MOSFET IRF510 Power Mosfet transistor
    Text: IRF510 Data Sheet November 1999 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET [ /Title IRF51 0 /Subject (5.6A, 100V, 0.540 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark


    Original     		PDF IRF510 IRF51 O220AB IRF510 transistor irf510 IRF510 MOSFET IRF510 Power Mosfet transistor

    Untitled

    Abstract: No abstract text available
    Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 4 — 4 February 2014 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors


    Original     		PDF AN11158

    irf52 0

    Abstract: No abstract text available
    Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()


    Original     		PDF IRF520 IRF52 O220AB IRF520 irf52 0

    BUZ11

    Abstract: buz11 application note BUZ1 TB334 TA9771
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ11 O220AB BUZ11 buz11 application note BUZ1 TB334 TA9771

    mosfet modern applications

    Abstract: L6741 adaptive deadtime driver JESD97 L6741TR 3 phase mosfet drive schematic st diode cross reference
    Text: L6741 High current MOSFET driver Data Brief Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ High frequency operation ■ Integrated bootstrap diode ■ Adaptive dead-time management


    Original     		PDF L6741 L6741 mosfet modern applications adaptive deadtime driver JESD97 L6741TR 3 phase mosfet drive schematic st diode cross reference

    Untitled

    Abstract: No abstract text available
    Text: AN11158 Understanding power MOSFET data sheet parameters Rev. 3 — 7 January 2013 Application note Document information Info Content Keywords MOSFET. Abstract This application note describes the content of power MOSFET data sheet parameters AN11158 NXP Semiconductors


    Original     		PDF AN11158 AN11158

    IRF820

    Abstract: irf-82
    Text: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()


    Original     		PDF IRF820 IRF82 O220AB IRF820 irf-82

    L6741

    Abstract: adaptive deadtime driver st diode cross reference
    Text: L6741 High current MOSFET driver Data Brief Features • Dual MOSFET driver for synchronous rectified converters ■ High driving current for fast external MOSFET switching ■ High frequency operation ■ Integrated bootstrap diode ■ Adaptive dead-time management


    Original     		PDF L6741 L6741 L6741TR adaptive deadtime driver st diode cross reference

    BUZ71 application

    Abstract: No abstract text available
    Text: BUZ71 Data Sheet [ /Title BUZ7 1 /Subject (14A, 50V, 0.100 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ71 O220AB TA9770. BUZ71 application

    BUZ72A

    Abstract: mosfet .5a 100v
    Text: BUZ72A Data Sheet [ /Title BUZ7 2A /Subject (9A, 100V, 0.250 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ72A O220AB TA17401. BUZ72A mosfet .5a 100v

    Untitled

    Abstract: No abstract text available
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ11 O220AB

    sil 5102

    Abstract: IRFP150 TB334
    Text: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()


    Original     		PDF IRFP150 sil 5102 IRFP150 TB334

    IRF95

    Abstract: IRF9510 p channel mosfet 100v TA17541
    Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET


    Original     		PDF IRF95 O220AB IRF9510 IRF95 IRF9510 p channel mosfet 100v TA17541

    Mosfet J49

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND


    Original     		PDF MRF171A Mosfet J49

    IRFP150N

    Abstract: No abstract text available
    Text: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,


    Original     		PDF IRFP150N O-247 IRFP150N

    Untitled

    Abstract: No abstract text available
    Text: ISL6144 Data Sheet October 6, 2011 FN9131.7 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode


    Original     		PDF ISL6144 FN9131 ISL6144