MOSFET DF 50 Search Results

TRANSISTOR SMD MARKING CODE QR

Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Contextual Info: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium

FDD8796

Abstract: FDU8796 247a SWITCHER
Contextual Info: LE A REE I DF M ENTATIO LE N MP FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDD8780

Abstract: FDD8780 equivalent FDU8780
Contextual Info: LE A REE I DF M ENTATIO LE N MP FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

fdd8780

Abstract: FDU8780
Contextual Info: LE A REE I DF M ENTATIO LE N MP FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: IXKF 40N60SCD1 ID25 VDSS RDSon typ. trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 2 Features MOSFET T Symbol Conditions

fdd8780

Contextual Info: REE I DF LE A M ENTATIO LE N MP FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: REE I DF LE A M ENTATIO LE N MP FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: REE I DF LE A M ENTATIO LE N MP FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDD8770

Abstract: FDD8770 equivalent FDU8770
Contextual Info: LE A REE I DF M ENTATIO LE N MP FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDD8782

Abstract: FDU8782 TO-251 fairchild FDD8782/FDU8782
Contextual Info: LE A REE I DF M ENTATIO LE N MP FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: IXKF 40N60SCD1 COOLMOS * Power MOSFET ID25 VDSS RDSon typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 1 2 2 5 Features MOSFET T Symbol

Contextual Info: IXKF 40N60SCD1 ID25 VDSS RDSon typ. trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 1 2 2 5 Features MOSFET T Symbol Conditions

MOSFET TRANSISTOR SMD MARKING CODE 11

Abstract: P-CHANNEL MOSFET
Contextual Info: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium

ultra low power mosfet fast switching

Abstract: MOSFET and parallel Schottky diode 40N60SCD1 E72873
Contextual Info: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET ID25 VDSS RDSon typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PAC™ Preliminary data 5 DS DF 1 T 2 1 5 E72873 2 Features MOSFET T

Contextual Info: JÜ0MERSÍ 7294621 § POWEREX "iß INC dF | aGoa?fl7 ^ ; T-39-13 JS010504 Tentative Single EXMOS MOSFET Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 40 Amperes/50 Volts Dimension A Inches .787 Millimeters 20 B .614 15.6 C .214 ± .0 0 8

Contextual Info: 333 -8 PSMN3R8-30LL DF N3 N-channel DFN3333-8 30 V 3.7 mΩ logic level MOSFET Rev. 4 — 12 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic

Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

SEMCO

Abstract: arco capacitors 422 arco capacitors DU1215S arco TRIMMER capacitor
Contextual Info: _ S 6 4 2 2 0 S M/A-COM P H I M/A-COM P H I I NC_ INC ÛS dF 05D 0 0 4 2 2 O T - ; ? - ^ | 5b42205 GQGDMaa fl N-CHANNEL RF POWER MOSFET DU1215S ^ M / A -C O M PHI, INC. FEATURES • UNIQUE NEW MOSFET STRUCTURE ■ LOWER CAPACITANCES FOR BROADBAND OPERATION