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Abstract: No abstract text available
Text: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance
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PE84140
PE84140
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance
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PE4141
PE4141
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marking code 8 lead msop package analog devices
Abstract: marking code 10 lead msop package analog devices Analog devices marking Information MSOP Analog 8 msop devices marking pe4141 marking code 8 lead msop package
Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance
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PE4141
PE4141
marking code 8 lead msop package analog devices
marking code 10 lead msop package analog devices
Analog devices marking Information MSOP
Analog 8 msop devices marking
marking code 8 lead msop package
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quad mosfet array
Abstract: 731 MOSFET PE84140 PE84140-EK 8 mosfet array F617
Text: Product Specification PE84140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE84140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance
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PE84140
PE84140
quad mosfet array
731 MOSFET
PE84140-EK
8 mosfet array
F617
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Yaesu
Abstract: marking code msop - 8 package analog devices F617 a007 PE4141-08MSOP-EK Analog 8 msop devices marking marking code 8 lead msop package analog devices
Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable
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PE4141
PE4141
Yaesu
marking code msop - 8 package analog devices
F617
a007
PE4141-08MSOP-EK
Analog 8 msop devices marking
marking code 8 lead msop package analog devices
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PE4141
Abstract: No abstract text available
Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance
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PE4141
PE4141
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mosfet SPICE MODEL
Abstract: self-heating subckt pspice high frequency mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods ronan difference between orcad pspice parallel mosfet MOSFET S1A FDP038AN08A0 PSPICE Orcad
Text: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET
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Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
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US6M11
R0039A
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
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US6M11
R0039A
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Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
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smd diode 46A
Abstract: equivalent smd mosfet IRF7205 IC MOSFET QG KRF7205 ld smd transistor smd mosfet
Text: MOSFET IC SMD Type HEXFET Power MOSFET KRF7205 IRF7205 Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V @ TA = 25
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KRF7205
IRF7205)
smd diode 46A
equivalent smd mosfet
IRF7205
IC MOSFET QG
ld smd transistor
smd mosfet
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QS6M4
Abstract: No abstract text available
Text: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.
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EM6M1
Abstract: MOSFET IGSS 100A
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
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Text: SiC MOSFET-based Power Modules Utilizing Split Output Topology for Superior Dynamic Behavior Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany 1. Abstract The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET,
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Text: 1.2V Drive Nch+Pch MOSFET EM6M2 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm EMT6 Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.
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IRf 48 MOSFET
Abstract: transistor irf 649 irf7105pbf f710 IRF7101 MS-012AA
Text: PD - 95164 IRF7105PbF Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 N-CHANNEL MOSFET
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IRF7105PbF
EIA-481
EIA-541.
IRf 48 MOSFET
transistor irf 649
irf7105pbf
f710
IRF7101
MS-012AA
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Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch+Pch MOSFET EM6M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode.
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QS6M4
Abstract: No abstract text available
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Dimensions Unit : mm Structure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (6) 0.85 0.7 (4) 1.6 2.8 Features 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.
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FDD8N50NZ
Abstract: FDD8N50 FDD8N50NZTM
Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and
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FDD8N50NZ
FDD8N50NZ
FDD8N50
FDD8N50NZTM
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QS6M4
Abstract: No abstract text available
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.
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TSMT6
Abstract: voltage source inverter z source inverter QS6M4
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching.
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Text: International [^Rectifier PD - 9.1099B IR F 7 1 0 7 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching N-CHANNEL MOSFET
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1099B
55MS2
002b511
IRF7107
002b5
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1RF7105
Abstract: 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a
Text: PD - 9.1097B International IOR Rectifier IRF7105 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching 'P-CHANNEL MOSFET !
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1097B
IRF7105
1RF7105
1RF710
irf7105 mosfet
MOSFET C65
irf7105
ior 050a
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