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    MOSFET HF AMPLIFIER Search Results

    MOSFET HF AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET HF AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLF278 mosfet HF amplifier

    Abstract: mosfet HF amplifier BLF278 equivalent HF10-0130 power amplifier blf278 hf power transistor mosfet BLF278 res HF 10-0130 transistor transistor cross ref HF band power amplifier
    Text: HF 10-0130 10W HF Amplifier Designed for HF band, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability • • • • • • • • 0.5 ÷ 32 MHz 24 / 50 Volts Input / Output 50 Ohm Pout : 10 W min


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    PDF BLF278 GR00061 BLF278 mosfet HF amplifier mosfet HF amplifier BLF278 equivalent HF10-0130 power amplifier blf278 hf power transistor mosfet res HF 10-0130 transistor transistor cross ref HF band power amplifier

    mosfet HF amplifier

    Abstract: BLF278 mosfet HF amplifier power amplifier blf278 BLF278 equivalent res HF 10-0130 transistor HF band power amplifier BLF278 mosfet HF applications class-A amplifier RES Ingenium HF10-0130
    Text: HF 10-0130 10W HF Amplifier Designed for HF band, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability • • • • • • • • 0.5 ÷ 32 MHz 24 / 50 Volts Input / Output 50 Ohm Pout : 10 W min


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    PDF BLF278 GR00061 mosfet HF amplifier BLF278 mosfet HF amplifier power amplifier blf278 BLF278 equivalent res HF 10-0130 transistor HF band power amplifier BLF278 mosfet HF applications class-A amplifier RES Ingenium HF10-0130

    HF Amplifier 300w

    Abstract: hf amplifier 100w mosfet HF amplifier hf class AB power amplifier mosfet 300-0130M MRF151G mrf151g date MRF151G hf amplifier mrf151g 300 GR00166
    Text: HF 300-0130M 300 W HF Amplifier Designed for HF band, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 1 ÷ 30 MHz 50 Volts Input / Output 50 Ohm Pout : 300 W min Gain : 22 dB typ.


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    PDF 300-0130M MRF151G 10ANY GR00166 HF Amplifier 300w hf amplifier 100w mosfet HF amplifier hf class AB power amplifier mosfet 300-0130M mrf151g date MRF151G hf amplifier mrf151g 300 GR00166

    erf7530

    Abstract: 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR
    Text: ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP DESCRIPTION The ERF7530 is a MOSFET transistor developed for RF power amplifier applications in the HF frequency range. High power in a TO-218 package for an excellent ‘watt per dollar’ value. TO-218 PACKAGE OUTLINE & MARKINGS


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    PDF ERF7530 30MHz ERF7530 O-218 30MHz 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR

    transistor t06

    Abstract: 828 TRANSISTOR equivalent
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINEDRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.


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    PDF RD00HHS1 30MHz RD00HHS1 30MHz 48MAX 53MAX transistor t06 828 TRANSISTOR equivalent

    transistor t06

    Abstract: RD00HHS1-101 lal04na1r0 RD00HHS1 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA
    Text: ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.


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    PDF RD00HHS1 30MHz RD00HHS1 30MHz transistor t06 RD00HHS1-101 lal04na1r0 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA

    16HHF1

    Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


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    PDF RD16HHF1 30MHz RD16HHF1 30MHz 16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF

    LAL04NA

    Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.


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    PDF RD00HHS1 30MHz RD00HHS1 30MHz LAL04NA T113 mosfet HF amplifier RD00HHS1-101 3M Touch Systems

    RD16HHF1 equivalent

    Abstract: RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet RD16HHF1 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


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    PDF RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1 equivalent RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING

    c 879 transistor

    Abstract: transistor t06 TRANSISTOR 7533 mosfet HF amplifier RD00HHS1 a 933 transistor f-30MHz 933 TRANSISTOR
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1


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    PDF RD00HHS1 30MHz RD00HHS1 30MHz c 879 transistor transistor t06 TRANSISTOR 7533 mosfet HF amplifier a 933 transistor f-30MHz 933 TRANSISTOR

    RD16HHF1

    Abstract: RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


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    PDF RD16HHF1 30MHz RD16HHF1 30MHz RD16HHeater RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF

    LAL04NA

    Abstract: RD00HHS1-101 transistor t06 DD 127 D TRANSISTOR mosfet HF amplifier RD00HHS1 S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET T06 transistor FET 355
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.


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    PDF RD00HHS1 30MHz RD00HHS1 30MHz LAL04NA RD00HHS1-101 transistor t06 DD 127 D TRANSISTOR mosfet HF amplifier S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET T06 transistor FET 355

    RD16HHF1

    Abstract: RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


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    PDF RD16HHF1 30MHz RD16HHF1 30MHz RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet

    RD16HHF1 application notes

    Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


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    PDF RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1or RD16HHF1 application notes RD16HHF RD16HHF1-101 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE

    RD16HHF1

    Abstract: RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


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    PDF RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1th RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8

    RD100HHF1

    Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


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    PDF RD100HHF1 30MHz RD100HHF1 30MHz TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w

    IC 30427

    Abstract: IC 30427 M RD06HHF1 transistor d 1557 1518 B FET TRANSISTOR 30427 25.ID5 mosfet HF amplifier Pch MOS FET mosfet vgs 5v
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.


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    PDF RD06HHF1 30MHz 30MHz RD06HHF1 IC 30427 IC 30427 M transistor d 1557 1518 B FET TRANSISTOR 30427 25.ID5 mosfet HF amplifier Pch MOS FET mosfet vgs 5v

    transistor d 1557

    Abstract: RD06HHF1 transistor 45 f 123 mosfet HF amplifier MITSUBISHI RF POWER MOS FET RF POWER TRANSISTOR 30MHz RD06HHF hf power transistor mosfet j4 92
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.


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    PDF RD06HHF1 30MHz 30MHz RD06HHF1 transistor d 1557 transistor 45 f 123 mosfet HF amplifier MITSUBISHI RF POWER MOS FET RF POWER TRANSISTOR 30MHz RD06HHF hf power transistor mosfet j4 92

    RD70HHF

    Abstract: RD70HHF1-101 RD70HHF1 10Turns mosfet HF amplifier TRANSISTOR D 1765 738
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


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    PDF RD70HHF1 30MHz RD70HHF1 30MHz RD70HHF1-101 RD70HHF RD70HHF1-101 10Turns mosfet HF amplifier TRANSISTOR D 1765 738

    RD70HHF1

    Abstract: TRANSISTOR D 1765 738 RD70HHF a 1757 transistor hf power transistor mosfet TRANSISTOR D 1765 mosfet HF amplifier rd70 MITSUBISHI RF POWER MOS FET TRANSISTOR 0931
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


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    PDF RD70HHF1 30MHz RD70HHF1 30MHz TRANSISTOR D 1765 738 RD70HHF a 1757 transistor hf power transistor mosfet TRANSISTOR D 1765 mosfet HF amplifier rd70 MITSUBISHI RF POWER MOS FET TRANSISTOR 0931

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain


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    PDF RD00HHS1 30MHz RD00HHS1 30MHz RD00HHS1-101

    pO115

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


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    PDF RD100HHF1 30MHz RD100HHF1 30MHz RD100HHF1-101 pO115

    RD 15 hf mitsubishi

    Abstract: TRANSISTOR 7533 A RD00HHS1-101
    Text: < Silicon RF Power MOS FET Discrete > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain


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    PDF RD00HHS1 30MHz RD00HHS1 30MHz RD00HHS1-101 Oct2011 RD 15 hf mitsubishi TRANSISTOR 7533 A

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD70HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION RD70HHF1 is a MOS FET type transistor specifically DRAWING 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


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    PDF RD70HHF1 30MHz RD70HHF1 30MHz RD70HHF1-101