MOSFET IRF44 Search Results

IRF4435

Abstract: IR*435 MS-012AA
Contextual Info: PD- 94243 IRF4435 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V RDS on = 0.020Ω T o p V ie w Description These P-channel HEXFET® Power MOSFETs from

TA17425

Abstract: IRF440 TB334
Contextual Info: IRF440 Data Sheet March 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET • 8A, 500V Ordering Information PACKAGE TO-204AE • rDS ON = 0.850Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds

IRF4401

Abstract: IRF440 IRF44
Contextual Info: PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF4401

Abstract: IRF440
Contextual Info: PD - 90372 IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF440 BVDSS 500V RDS(on) 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

Contextual Info: SFF440J Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 8 AMP N-Channel Power MOSFET 500 Volts 0.86 DESIGNER’S DATA SHEET Part Number / Ordering Information1/

Contextual Info: SFF440J Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 8 AMP N-Channel Power MOSFET 500 Volts 0.86 Ω DESIGNER’S DATA SHEET Part Number / Ordering Information1/

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

IRF440

Abstract: SFF440C 0-85Q
Contextual Info: Sspii PRELIMINARY SFF440C SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■

IRF440

Abstract: SFF440
Contextual Info: §s§i PRELIMINARY SFF440 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: • • • • • • •

IRF440

Abstract: SFF440M
Contextual Info: PRELIMINARY A SFF440M /SFF440Z SOLID STATE DEVICES, INC — 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate

it8585

Contextual Info: A P P LIC A T IO N NO TE 976A Understanding and Using Power MOSFET Reliability Data by Steve Clemente and Ken Teasdale Abstract It could reasonably be argued that a design is not complete until its long term performance is known. Design engineers will only be able to calculate

diode SM 88A

Abstract: IRF440 SFF440-28 F00085A
Contextual Info: SS | PRELIMINARY SOLID STATE DEVICES, INC SFF440-28 // V - L r 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 8* AMP 500 VOLTS D e s ig n e r’s D ata S h eet O.QQQ N-CHANNEL POWER MOSFET FEATURES: • ■

irf630 irf640

Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
Contextual Info: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший

Contextual Info: MOTOROLA SC XSTRS/R b3b?254 D F □ □ ‘ìflHEG TST inOTb MOTOROLA • SEM ICONDUCTOR ■ TECHNICAL DATA Part Number VDSS RDS(on) >d IRF440 500 V 0.85 n 8.0 A N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed

irf441

Abstract: IRF440 IRF44 IRF442 IRF4431 IRF443 mosfet irf44
Contextual Info: Standard Power MOSFETs - - IRF440, IRF441, IRF442, IRF443 File Number Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Fïeld-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E 7 A and 8 A, 450 V - 500 V

f441

Abstract: IRF440 HARRIS 440r
Contextual Info: 2 HARRIS IRF440/441/442/443 IRF440R/441 R/442R/443R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 7A and 8 A, 4 5 0 V - 5 0 0V • rQ s(on = 0 .8 5 0 and 1 .1 0 SOURCE • Single Pulse A valanche Energy R ated*

IRF440

Abstract: DDD511B DDD5141 IRF44 IRF441 IRF442 IRF443 mosfet 441 7964 mosfet
Contextual Info: 7964142 DE I T T b m M E SAMSUNG S E M I C O N D UCTOR 98D IN C D T S f -t3 05139 N-CHANNEL POWER MOSFETS □ □ □ S 1 3 ci 1 IRF440/441/442/443 FEATURES Low RD£i on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times

KAG TRANSISTOR

Contextual Info: MOTOROLA IRF440 IRF441 TECHNICAL DATA IM-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V DSS rDS on •d IRF440 500 V 0.85 n 8.0 A T h e s e T M O S P o w e r FETs are d es ig n e d fo r high v o ltag e, high sp e ed p o w e r s w itch in g a p p licatio n s such as s w itch in g regulators,

Contextual Info: HE D | M5SS45S INTERNATIONAL G ütm öS 7 | Data Sheet No. PD-9.372F T “ * 7 - / J RECTIFIER INTE RNATIONAL- RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF44Q IRF441 IRF442 :r N-CHANNEL IRF443 500 Volt, 0.85 Ohm HEXFET TO-204ÂA TO-3) Hermetic Package

IRF449

Abstract: IRF448 1F44S L1207 A3810 M gogil 300UJ diode duj D5102
Contextual Info: H E D I 4 A S S 4 S 5 a a O cU cf O b | Data Sheet No. PD-9.572A INTERNATIONAL RECTIFIER 4 INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS iJ IRF448 IRF44S N-CHANNEL 500 Volt, 0.60 Ohm HEXFET TO-204AA TO-3 Hermetic Package

k 3561 MOSFET

Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not