IRF44 Search Results

IRF4401

Abstract: IRF440 IRF44
Contextual Info: PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irf8408

Abstract: IRF440 irf4404 7n50 RF840 IRF840 MTM7N45 MTM7N50 Application of irf840 IRF441
Contextual Info: m a a FAIRCHILD c 'i i_ r- i —n - A4 SEMICONDUCTOR DE 1 3 4 t . T t . 7 4 0027^25 IRF440-443/IRF840-843 M TM7N45/7N50 N-Channel Power MOSFETs, 8 A, 450 V /50 0 V F A IR C H IL D A Schlumberger Company Power And Discrete Division _ -Description

IRF449

Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

Contextual Info: PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

ir 441 c

Abstract: 443 DIODE IRF840 irfp440 f441 ic F441 IRF440 high voltage pulse with irf840 MOSFET IRF840 Diode 442
Contextual Info: IRF840/841/842/843 IRFP440/441/442/443 IRF440/441 /442/443 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Low er R d s ON Im proved ind u ctive ru g g ed n ess F ast sw itch in g tim es R u g ged p olysilicon g a te ce ll structure Low er in p u t ca p a c ita n c e

irf441

Abstract: IRF440 IRF44 IRF442 IRF4431 IRF443 mosfet irf44
Contextual Info: Standard Power MOSFETs - - IRF440, IRF441, IRF442, IRF443 File Number Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Fïeld-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E 7 A and 8 A, 450 V - 500 V

D86ER2

Abstract: IRF440 Transistor 358 to3
Contextual Info: IRF440.441 D86ER2,R1 F Ü fiT 8 AMPERES 500, 450 VOLTS r DS ON = '85 n HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

1RF620

Abstract: 1RF530 1rf521 1rf630 IRF449 RF543 irf362 IRF352 IRF353 IRF421
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF4431

Abstract: IRF44 IRF442R IRF 426 441F IRF440R IRF441R IRF443R RF440 rf44
Contextual Info: _Rugged Power MOSFETs File N u m b er 2007 IRF440R, IRF441R, IRF442R, IRF443R Avalanche Energy Rated N-Channel Power MOSFETs 8A a nd 7A, 500V-400V rDs on = 0 .8 5 f) and 1 .1 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

TA17425

Abstract: IRF440 TB334
Contextual Info: IRF440 Data Sheet March 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET • 8A, 500V Ordering Information PACKAGE TO-204AE • rDS ON = 0.850Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds

irf440

Contextual Info: h a IRF440, IRF441, //ÎF 4 4 2 IRF443 r r i s semi conduct or 7 A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 7A and 8A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF449

Abstract: IRF448 1F44S L1207 A3810 M gogil 300UJ diode duj D5102
Contextual Info: H E D I 4 A S S 4 S 5 a a O cU cf O b | Data Sheet No. PD-9.572A INTERNATIONAL RECTIFIER 4 INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS iJ IRF448 IRF44S N-CHANNEL 500 Volt, 0.60 Ohm HEXFET TO-204AA TO-3 Hermetic Package

IRF4401

Abstract: IRF440
Contextual Info: PD - 90372 IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF440 BVDSS 500V RDS(on) 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

T0204AA

Contextual Info: IRF640 IRF641 IRF642 IRF340 IRFP340 IRF341 IRFP341 IRF740 IRF741 IRF742 IRF743 IRFP440 IRF441 60 1600 750 300 E2 10 60 1600 750 300 E2 0.22 10 60 1600 750 300 E2 0.25 0.22 10 60 1600 750 300 E2 4 0.25 0.55 5 60 1600 450 150 E3 2 4 0.25 0.55 5 60 1600 450 150

IRF411

Abstract: IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

irf3203

Abstract: MTM12N20 MTM15N35 DJ05AH mtm5n35 MTM10N25 MTM15 MTM3N35 MTM4N35 MTM5N20
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ 'D 'D(Cont) (Amp) Max PO @ Tc = 25°C (Wans) Max V BR(DSS) (Volts) Min (Ohms) Max (Amp) 450 1.5 2 M TM 4N 45 4 75 1.10 4 IRF443

IRF4435

Abstract: IR*435 MS-012AA
Contextual Info: PD- 94243 IRF4435 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V RDS on = 0.020Ω T o p V ie w Description These P-channel HEXFET® Power MOSFETs from

IRF449

Abstract: 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761
Contextual Info: HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER TO-3 Package INTERNATIONAL R ECTIFIER SbE D 4055455 OOlOSbS □ • I«R T - 3 ^ - 0 3 N-CHANNEL Types % V IRF451 IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF423 IRF460 IRF462 IRF450 2N6770 IRF452

Contextual Info: HE D | M5SS45S INTERNATIONAL G ütm öS 7 | Data Sheet No. PD-9.372F T “ * 7 - / J RECTIFIER INTE RNATIONAL- RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF44Q IRF441 IRF442 :r N-CHANNEL IRF443 500 Volt, 0.85 Ohm HEXFET TO-204ÂA TO-3) Hermetic Package

RF432

Abstract: IRF449 IRF460 IRFac32
Contextual Info: International ID o H l f i û r [t S HEXFFT MOSFETs r ^ « e c im e r Hermetic Package 7Ü-3 N-Channel Part Number V q s Drain Source Voltage Volts IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 IRF450 2N6770 IRF462 IRF460 500 IRFAC32

IRF44

Abstract: IRF440
Contextual Info: ; 7964142 DE I T T b m M E SAMSUNG S E M I C O N D U C TOR □ □ □ 5 1 3 e] 1 I 98D IN C ^ D T S f -t3 05139 N-CHANNEL POWER MOSFETS IRF440/441/442/443 FEATURES • • • • • • • • • Low RDS on at high voltage Improved inductive ruggedness

Contextual Info: MOTOROLA SC XSTRS/R b3b?254 D F □ □ ‘ìflHEG TST inOTb MOTOROLA • SEM ICONDUCTOR ■ TECHNICAL DATA Part Number VDSS RDS(on) >d IRF440 500 V 0.85 n 8.0 A N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed

KAG TRANSISTOR

Contextual Info: MOTOROLA IRF440 IRF441 TECHNICAL DATA IM-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V DSS rDS on •d IRF440 500 V 0.85 n 8.0 A T h e s e T M O S P o w e r FETs are d es ig n e d fo r high v o ltag e, high sp e ed p o w e r s w itch in g a p p licatio n s such as s w itch in g regulators,

TO-204AE

Contextual Info: NATL N-Channel Power MOSFETs N-Channel Power MOSFETs Continued IRFP441 IRF442 IRF840 IRF841 IRF842 IRF843 2N6764 IRFP1S0 IRFP151 IRF152 2N6765 2N6766 IRF250 IRFP250 IRF251 - 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600