MOSFET N CHANNEL 200V 2A Search Results

IRF620

Abstract: TA9600 TB334 transistor irf620
Contextual Info: IRF620 Data Sheet January 2002 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 5.0A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFF220

Abstract: TA9600 TB334
Contextual Info: IRFF220 Data Sheet January 2002 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF620 application

Abstract: TA9600 IRF620 TB334 transistor irf620
Contextual Info: IRF620 Data Sheet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 5.0A, 200V Formerly developmental type TA9600. Ordering Information PACKAGE 1577.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

1E14

Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460

AN7254

Abstract: AN7260 RFP2N20
Contextual Info: RFP2N20 Data Sheet January 2002 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features • 2A, 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

2N6790

Abstract: TB334
Contextual Info: 2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching

AN7254

Abstract: AN7260 RFP2N20L TB334
Contextual Info: RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

Logic Level N-Channel Power MOSFET

Abstract: AN7254 AN7260 RFP2N20L TB334
Contextual Info: RFP2N20L Data Sheet July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

1E14

Abstract: 2E12 FRL230R4 JANSR2N7275
Contextual Info: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

TA09532

Contextual Info: interrii " RFP2N20L I D atei S h e e t J u ly 1 9 9 9 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use

Contextual Info: RFP2N20 interdi Data Sheet J u ly 1999 F ile N u m b e r 2 8 8 1 .2 Features 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET • 2A .200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

FRL230

Abstract: 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230
Contextual Info: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

AN7254

Abstract: AN7260 RFP2N20
Contextual Info: RFP2N20 Data Sheet July 1999 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: IRFF210 Data Sheet Title FF 0 bt 2A, 0V, 00 m, March 1999 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: JANSR2N7275 S m a Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Description Features • 5A, 200V, r D S O N The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

transistor irf620

Contextual Info: IRF620 Data Sheet Title F62 bt 0A, 0V, 00 m, June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFF220 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFF220

Abstract: TA9600 TB334
Contextual Info: IRFF220 Data Sheet March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 3.5A, 200V • rDS ON = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

2N6790

Abstract: TB334
Contextual Info: 2N6790 Data Sheet November 1998 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 3.5A, 200V • rDS ON = 0.800Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device

Contextual Info: JANSR2N7396 33 HÄf^as? Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.46012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

relay 12v 100A

Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

FDD18N20LZ

Abstract: Forward Reference Diode ic cgs 160v 110 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V
Contextual Info: UniFET FDD18N20LZ TM N-Channel MOSFET 200V Logic, 16A, 0.125 Features Description • RDS on = 0.125( Max.) @ VGS = 10V, ID = 8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: RFP2N20L Data Sheet Title FP2 0L bt A, 0V d 0V, 00 m, gic vel, an- July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Features The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use